Request Quote
(Ships tomorrow)
2SJ656 Equivalent & Substitute Parts
Part Overview
The 2SJ656 is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 18A continuous drain current in a Through Hole TO-220ML package. This device is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support and procurement continuity. The 2SJ656 is suitable for applications requiring P-Channel switching and linear regulation in moderate power circuits.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) @ 25°C | 18A |
| Rds On (Max) @ 9A, 10V | 75.5 mOhm |
| Gate Charge (Qg) @ 10V | 74 nC |
| Input Capacitance (Ciss) @ 20V | 4200 pF |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Operating Temperature (TJ) | 150°C |
| Package Type | TO-220-3 Through Hole |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
Substitute Part Grouping Explanation
Substitution of the 2SJ656 is based on the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss): 100V minimum
- Continuous Drain Current (Id): 18A minimum at rated conditions
- Package Type: TO-220-3 Through Hole (mechanical and thermal compatibility)
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
Thermal and Operational Criteria:
- Operating Temperature Range: Must support 150°C junction temperature minimum
- Power Dissipation: Substitute must support thermal requirements of the application
The IXTP18P10T meets these substitution criteria with matching voltage and current ratings, identical package configuration, and compatible thermal characteristics. Both devices are P-Channel MOSFETs in TO-220-3 packages rated for 100V and 18A operation.
Parameter Comparison
| Parameter | 2SJ656 (onsemi) | IXTP18P10T (IXYS) |
|---|---|---|
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Continuous Drain Current (Id) | 18A (Ta) | 18A (Tc) |
| Rds On (Max) @ 9A, 10V | 75.5 mOhm | 120 mOhm |
| Gate Charge (Qg) @ 10V | 74 nC | 39 nC |
| Input Capacitance (Ciss) | 4200 pF @ 20V | 2100 pF @ 25V |
| Vgs (Max) | ±20V | ±15V |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) | 83W (Tc) |
| Operating Temperature (TJ) | 150°C | -55°C ~ 150°C |
| Package Type | TO-220ML | TO-220-3 |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Product Status | Obsolete | Active |
Engineering Selection Recommendations
2SJ656 (onsemi): This device is classified as obsolete. While 22,900 pieces remain in stock, long-term procurement cannot be assured. The 2SJ656 is suitable for legacy system maintenance and repair applications where existing inventory is available.
IXTP18P10T (IXYS): This device is classified as active with 50,300 pieces in stock. The IXTP18P10T is the recommended substitute for new designs and ongoing production. Both devices meet the core electrical requirements of 100V/18A operation in a TO-220-3 package. The IXTP18P10T offers superior power dissipation capability (83W at Tc versus 30W at Tc for the 2SJ656), lower gate charge (39 nC versus 74 nC), and reduced input capacitance (2100 pF versus 4200 pF), resulting in improved switching performance and thermal efficiency.
The IXTP18P10T is RoHS3 compliant, whereas the 2SJ656 compliance status is not specified. Both devices carry REACH Unaffected status and EAR99 ECCN classification.
Frequently Asked Questions (FAQ)
Q: Can the IXTP18P10T directly replace the 2SJ656 in existing circuit designs?
A: Yes. Both devices are P-Channel MOSFETs with identical 100V/18A ratings in TO-220-3 packages. Pin configuration and mechanical fit are compatible. However, circuit performance will differ due to variations in Rds On, gate charge, and input capacitance. Designs relying on specific switching speed or thermal characteristics should be evaluated for the IXTP18P10T's lower gate charge and higher power dissipation capability.
Q: What are the key electrical differences between these devices?
A: The IXTP18P10T exhibits lower gate charge (39 nC versus 74 nC), reduced input capacitance (2100 pF versus 4200 pF), and higher on-resistance (120 mOhm versus 75.5 mOhm). The IXTP18P10T provides significantly higher power dissipation (83W versus 30W at Tc). These differences affect switching speed, gate drive requirements, and thermal management.
Q: Are there package compatibility concerns?
A: Both devices use TO-220-3 Through Hole packages. The 2SJ656 is specified as TO-220ML, while the IXTP18P10T is specified as TO-220-3. These designations refer to the same physical package form factor with three leads suitable for Through Hole mounting. Mechanical and thermal interface compatibility is maintained.
Q: Why is the 2SJ656 listed as obsolete?
A: The 2SJ656 is no longer in active production by onsemi. While inventory remains available, future procurement cannot be guaranteed. The IXTP18P10T, classified as active, represents the current market solution for this device category.
Q: What compliance certifications apply to these devices?
A: Both devices are REACH Unaffected and carry EAR99 ECCN classification. The IXTP18P10T is RoHS3 compliant. The 2SJ656 RoHS compliance status is not specified in available documentation.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts

