2SJ304(F) P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2SJ304(F) is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 60V drain-to-source voltage with 14A continuous drain current in a Through Hole TO-220NIS package. This device is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and production continuity. The part delivers 40W maximum power dissipation and operates at junction temperatures up to 150°C.

Substiute Parts

2SJ304(F)

Toshiba Semiconductor and StorageIn Stock: 8112SJ304(F) Datasheet

Current PartRFQ

FQPF27P06

onsemiIn Stock: 29681FQPF27P06 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SJ304(F) is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• FET Type: P-Channel configuration
• Technology: MOSFET (Metal Oxide Semiconductor)
• Drain to Source Voltage (Vdss): 60V minimum rating
• Continuous Drain Current (Id): Equal to or greater than 14A
• Package Type: Through Hole TO-220 form factor
• On-State Resistance (Rds On): Performance at specified gate voltage conditions

Allowable Substitution Parameters: Substitute parts may exceed the main part specifications in the following areas without compromising circuit compatibility:

• Continuous drain current rating (higher current capability)
• Power dissipation rating (higher thermal capacity)
• Operating temperature range (wider or higher maximum temperature)
• Gate charge (lower values improve switching performance)
• Maximum gate voltage rating (higher voltage tolerance)
• Input capacitance (variations within typical application ranges)

The FQPF27P06 from onsemi meets all mandatory matching criteria and demonstrates improved electrical performance across multiple parameters, qualifying it as a direct substitute for the obsolete 2SJ304(F).

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FQPF27P06 (onsemi)

The FQPF27P06 is the qualified substitute for the obsolete 2SJ304(F). Selection is based on the following engineering factors:

Product Status Alignment: The FQPF27P06 carries Active product status, ensuring long-term availability and manufacturing continuity. The 2SJ304(F) is classified as Obsolete, creating supply chain risk and justifying transition to an active equivalent.

Electrical Performance: The FQPF27P06 demonstrates superior electrical characteristics across critical parameters. On-state resistance is reduced to 70 mOhm compared to 120 mOhm, resulting in lower conduction losses. Continuous drain current rating increases from 14A to 17A, providing additional design margin. Power dissipation capacity increases from 40W to 47W, supporting higher thermal loads.

Compliance and Certifications: The FQPF27P06 is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, confirming trade compliance equivalence.

Thermal and Voltage Ratings: The FQPF27P06 operating temperature range extends to 175°C maximum junction temperature, exceeding the 2SJ304(F) specification of 150°C. Maximum gate voltage tolerance increases to ±25V from ±20V, providing enhanced gate drive flexibility.

Package Compatibility: Both devices utilize identical TO-220-3 Through Hole packaging, enabling direct mechanical and electrical substitution without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the FQPF27P06 directly replace the 2SJ304(F) without circuit modifications?

A: Yes. The FQPF27P06 is electrically and mechanically compatible with the 2SJ304(F). Both devices are P-Channel MOSFETs with 60V Vdss rating in TO-220-3 packages. The FQPF27P06 meets or exceeds all critical electrical specifications of the 2SJ304(F), including drain current, on-state resistance, and gate charge characteristics. No circuit modifications are required for substitution.

Q: What are the key differences between the 2SJ304(F) and FQPF27P06?

A: The primary differences are: (1) Product Status—the FQPF27P06 is Active while the 2SJ304(F) is Obsolete; (2) On-State Resistance—the FQPF27P06 exhibits 70 mOhm versus 120 mOhm, reducing conduction losses; (3) Continuous Drain Current—the FQPF27P06 is rated for 17A compared to 14A; (4) Power Dissipation—the FQPF27P06 supports 47W versus 40W; (5) Operating Temperature Range—the FQPF27P06 extends to 175°C maximum junction temperature; (6) Maximum Gate Voltage—the FQPF27P06 tolerates ±25V versus ±20V.

Q: Are there any performance trade-offs when substituting the FQPF27P06 for the 2SJ304(F)?

A: No performance trade-offs exist. The FQPF27P06 provides equivalent or superior performance across all measured parameters. Gate charge remains nearly identical at 43 nC versus 45 nC, ensuring comparable switching characteristics. Input capacitance increases slightly to 1400 pF from 1200 pF, a variation within typical application tolerances. All improvements in the FQPF27P06 specification enhance circuit reliability and thermal performance.

Q: Is the TO-220-3 package identical between both parts?

A: Both the 2SJ304(F) and FQPF27P06 utilize TO-220-3 Through Hole packages. The mechanical form factor, pin configuration, and PCB footprint are identical, enabling direct substitution without layout modifications. The FQPF27P06 is supplied in Tube packaging format for production handling.

Q: What is the significance of the 2SJ304(F) being classified as Obsolete?

A: Obsolete classification indicates that the 2SJ304(F) is no longer manufactured by Toshiba and existing inventory will eventually deplete. This creates supply chain risk for new designs and production runs. The FQPF27P06, classified as Active, ensures reliable long-term availability and manufacturing support from onsemi.

Q: Do both parts meet current regulatory compliance standards?

A: The FQPF27P06 meets current regulatory requirements with RoHS3 Compliance and REACH Unaffected status. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, confirming trade compliance equivalence. The FQPF27P06 is the preferred choice for new designs requiring current regulatory alignment.

Q: What is the impact of the lower on-state resistance in the FQPF27P06?

A: The FQPF27P06 on-state resistance of 70 mOhm, compared to 120 mOhm in the 2SJ304(F), reduces conduction losses by approximately 42 percent at equivalent current levels. This improvement decreases power dissipation, reduces thermal load on the device and PCB, and improves overall circuit efficiency. Lower on-state resistance also reduces voltage drop across the FET during conduction, benefiting circuit performance.

Q: Are gate drive requirements different between the two parts?

A: Gate drive requirements are compatible. Both parts operate with 10V drive voltage for optimal on-state resistance performance. The FQPF27P06 gate threshold voltage is specified at 4V versus 2V for the 2SJ304(F), a difference that does not impact standard gate drive circuits. The FQPF27P06 maximum gate voltage tolerance of ±25V provides additional margin compared to ±20V in the 2SJ304(F).