2SD882-Y-BP Equivalent & Substitute Parts

Part Overview

The 2SD882-Y-BP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This component features a maximum collector current of 3 A, collector-emitter breakdown voltage of 30 V, and maximum power dissipation of 1.25 W in a Through Hole TO-126 package. The part is classified as Obsolete, necessitating identification of equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage ratings, current capacity, and thermal characteristics while accommodating available packaging and manufacturer options.

Substiute Parts

2SD882-Y-BP

Micro Commercial CoIn Stock: 8572SD882-Y-BP Datasheet

Current PartRFQ

KSD882YS

onsemiIn Stock: 9447KSD882YS Datasheet

DirectRFQ

2SD882

STMicroelectronicsIn Stock: 302852SD882 Datasheet

SimilarRFQ

MJE180STU

Fairchild SemiconductorIn Stock: 6784MJE180STU Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 2SD882-Y-BP is determined by strict alignment with the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN configuration required
• Maximum Collector Current (Ic): 3 A minimum
• Collector-Emitter Breakdown Voltage (VCEO): 30 V minimum
• DC Current Gain (hFE): 160 minimum @ 1A, 2V
• Mounting Type: Through Hole
• Package Compatibility: TO-126 or TO-126-3 footprint

Secondary Compatibility Factors:

• Operating Temperature Range: -55°C to 150°C minimum
• RoHS3 Compliance: Required for regulatory alignment
• Vce Saturation characteristics within acceptable operating margins

Parts meeting all primary criteria are classified as direct substitutes. Parts exceeding voltage or power ratings while maintaining electrical compatibility are classified as similar alternatives suitable for applications with higher design margins.

Parameter Comparison

Engineering Selection Recommendations

KSD882YS (onsemi) - Direct Substitute

The KSD882YS meets all primary substitution criteria with identical electrical specifications for collector current, breakdown voltage, saturation voltage, and DC current gain. This part maintains the 30 V voltage rating and 3 A current capacity required for 2SD882-Y-BP applications. The KSD882YS offers enhanced transition frequency (90 MHz versus 50 MHz), providing improved high-frequency performance. ROHS3 compliance and -55°C to 150°C operating temperature range ensure regulatory and thermal compatibility. Product status as Last Time Buy indicates limited future availability; procurement planning is recommended for long-term supply assurance.

2SD882 (STMicroelectronics) - Similar Alternative

The STMicroelectronics 2SD882 shares the same base product number and maintains 30 V voltage and 3 A current ratings. This part is classified as Active, ensuring ongoing availability and supply continuity. The significantly higher power rating (12.5 W versus 1.25 W) provides enhanced thermal margin for applications with elevated power dissipation. Transition frequency of 100 MHz exceeds the original specification. Differences in Vce saturation (1.1V @ 150mA, 3A versus 500mV @ 200mA, 2A) and DC current gain (100 @ 100mA, 2V versus 160 @ 1A, 2V) require circuit-level evaluation for applications with tight saturation or gain specifications. ROHS3 compliance and equivalent temperature range support regulatory requirements.

MJE180STU (Fairchild Semiconductor) - Higher Voltage Alternative

The MJE180STU maintains 3 A collector current and identical operating temperature range but features elevated collector-emitter breakdown voltage (40 V versus 30 V). This higher voltage rating accommodates applications requiring additional voltage margin. Power dissipation (1.5 W) exceeds the original specification. Significant differences in DC current gain (50 @ 100mA, 1V versus 160 @ 1A, 2V) and Vce saturation (1.7V @ 600mA, 3A versus 500mV @ 200mA, 2A) indicate this part is suitable for applications where higher voltage tolerance is prioritized over gain and saturation characteristics. RoHS compliance status is not specified in available documentation.

Frequently Asked Questions (FAQ)

Q: Can KSD882YS directly replace 2SD882-Y-BP without circuit modification?

A: The KSD882YS meets all critical electrical parameters including collector current (3 A), breakdown voltage (30 V), saturation voltage (500mV @ 200mA, 2A), and DC current gain (160 @ 1A, 2V). Direct substitution is supported for applications operating within these specifications. The enhanced transition frequency (90 MHz) provides additional performance margin. Verify pinout alignment with TO-126-3 package configuration before installation.

Q: What are the key differences between KSD882YS and the STMicroelectronics 2SD882?

A: Both parts maintain 30 V voltage and 3 A current ratings. The primary differences are power dissipation (1 W versus 12.5 W), transition frequency (90 MHz versus 100 MHz), and DC current gain measurement conditions (160 @ 1A, 2V versus 100 @ 100mA, 2V). The STMicroelectronics part provides higher thermal capacity and faster switching. Applications requiring specific saturation or gain characteristics must evaluate these differences against circuit requirements.

Q: Is MJE180STU suitable for 2SD882-Y-BP applications?

A: The MJE180STU maintains 3 A collector current and compatible operating temperature range but features 40 V breakdown voltage versus 30 V. This higher voltage rating is suitable for applications with elevated voltage requirements. However, reduced DC current gain (50 @ 100mA, 1V) and higher Vce saturation (1.7V @ 600mA, 3A) require circuit evaluation. Use this part only when higher voltage tolerance is a design requirement.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts utilize Through Hole mounting in TO-126 or TO-126-3 packages, maintaining mechanical compatibility with 2SD882-Y-BP footprints. Verify specific supplier device package designation (TO-126 versus TO-126-3) against PCB layout requirements, as minor pin configuration differences may exist between variants.

Q: Are all substitute parts RoHS3 compliant?

A: KSD882YS and STMicroelectronics 2SD882 are explicitly ROHS3 compliant. MJE180STU RoHS compliance status is not specified in available documentation. Regulatory requirements for your application determine whether RoHS3 certification is mandatory for part selection.

Q: What is the supply status for each substitute part?

A: KSD882YS is classified as Last Time Buy, indicating limited future availability. STMicroelectronics 2SD882 is Active with ongoing production and supply continuity. MJE180STU is Active. For applications requiring long-term supply assurance, the STMicroelectronics part provides the most stable availability profile.

Q: How do transition frequency differences affect circuit performance?

A: The 2SD882-Y-BP specifies 50 MHz transition frequency. KSD882YS (90 MHz) and STMicroelectronics 2SD882 (100 MHz) offer enhanced high-frequency performance. Applications operating below 50 MHz are unaffected by these differences. High-frequency switching circuits benefit from the increased transition frequency of substitute parts, enabling faster switching transitions and reduced switching losses.