2SD882-R-BP Equivalent & Substitute Parts

Part Overview

The 2SD882-R-BP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 3 A, collector-emitter breakdown voltage of 30 V, and maximum power dissipation of 1.25 W in a Through Hole TO-126 package. The 2SD882-R-BP is classified as obsolete, making identification of equivalent substitute parts essential for ongoing design support, maintenance, and production continuity. Substitute parts must maintain functional compatibility while meeting or exceeding the electrical specifications of the original component.

Substiute Parts

2SD882-R-BP

Micro Commercial CoIn Stock: 9522SD882-R-BP Datasheet

Current PartRFQ

MJE180STU

Fairchild SemiconductorIn Stock: 6784MJE180STU Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2SD882-R-BP are selected based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following parameters:

Transistor Type: Both the main part and substitute must be NPN bipolar junction transistors to ensure functional equivalence in circuit operation.

Current Rating: The substitute must support a maximum collector current (Ic) of at least 3 A to handle the same load conditions as the original part.

Voltage Rating: The substitute must have a collector-emitter breakdown voltage (VCEO) equal to or greater than 30 V to ensure safe operation across the intended voltage range.

Power Dissipation: The substitute must support a maximum power dissipation of at least 1.25 W to accommodate thermal requirements.

Frequency Response: The substitute must maintain a transition frequency (fT) of at least 50 MHz to preserve switching speed characteristics.

Package Compatibility: The substitute must use the TO-126-3 Through Hole package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management solutions.

Operating Temperature: The substitute must support the full operating temperature range of -55°C to 150°C (junction temperature).

Parameter Comparison

Engineering Selection Recommendations

The MJE180STU manufactured by Fairchild Semiconductor is a direct substitute for the obsolete 2SD882-R-BP. Both devices are NPN bipolar junction transistors with identical maximum collector current (3 A) and transition frequency (50 MHz) specifications. The MJE180STU exceeds the original part specifications in two critical areas: collector-emitter breakdown voltage (40 V versus 30 V) and maximum power dissipation (1.5 W versus 1.25 W). These enhanced ratings provide additional design margin and reliability in applications operating near the original part's maximum ratings.

The MJE180STU is classified as an active product with current manufacturing status, ensuring long-term availability and supply chain stability. Both parts are RoHS compliant and share identical Through Hole TO-126-3 package specifications, enabling direct PCB layout compatibility without modification.

Selection of the MJE180STU as a substitute is appropriate for all applications previously designed around the 2SD882-R-BP, provided that circuit designs do not depend on the lower voltage rating of the original part. The enhanced electrical specifications of the MJE180STU support equivalent or improved performance in switching and amplification applications.

Frequently Asked Questions (FAQ)

Q: Can the MJE180STU be used as a direct replacement for the 2SD882-R-BP in existing circuit designs?

A: Yes. The MJE180STU is electrically and mechanically compatible with the 2SD882-R-BP. Both devices share identical collector current (3 A), transition frequency (50 MHz), and TO-126-3 package specifications. The MJE180STU provides enhanced voltage and power ratings, making it suitable for all applications designed for the original part.

Q: What are the key differences between the 2SD882-R-BP and MJE180STU?

A: The primary differences are product status and enhanced electrical specifications. The 2SD882-R-BP is obsolete, while the MJE180STU is an active product. The MJE180STU has a higher collector-emitter breakdown voltage (40 V versus 30 V) and greater maximum power dissipation (1.5 W versus 1.25 W). These differences provide additional design margin without affecting functional compatibility.

Q: Are there any package or pinout differences between these parts?

A: No. Both the 2SD882-R-BP and MJE180STU use the TO-126-3 Through Hole package with identical pinout and mechanical dimensions. No PCB layout modifications are required for substitution.

Q: What is the operating temperature range for the MJE180STU?

A: The MJE180STU supports a maximum junction temperature of 150°C, matching the upper temperature limit of the 2SD882-R-BP. The full operating temperature range is -55°C to 150°C (junction temperature).

Q: Is the MJE180STU RoHS compliant?

A: Yes. The MJE180STU meets RoHS compliance requirements, consistent with the 2SD882-R-BP specifications.

Q: Why does the MJE180STU have a higher voltage rating than the 2SD882-R-BP?

A: The MJE180STU is designed as a general-purpose power transistor with enhanced specifications. The 40 V collector-emitter breakdown voltage provides additional design margin and allows the device to operate safely in applications with higher voltage transients or design variations.

Q: Can the MJE180STU be used in applications requiring the exact 30 V rating of the 2SD882-R-BP?

A: Yes. The higher voltage rating of the MJE180STU does not prevent its use in 30 V applications. The device operates safely at all voltages up to its maximum rated value of 40 V.