2SD882-O-BP Equivalent & Substitute Parts

Part Overview

The 2SD882-O-BP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, rated for 30V collector-emitter breakdown voltage and 3A maximum collector current. This component is classified as obsolete, necessitating identification of active equivalent parts for ongoing production and maintenance applications. The through-hole TO-126 package configuration requires substitutes with compatible mechanical and electrical characteristics to ensure direct board-level replacement capability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) Max	3	A
Voltage - Collector Emitter Breakdown (Max)	30	V
Power - Max	1.25	W
Frequency - Transition	50	MHz
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—
Operating Temperature Range	-55 to 150	°C

Substitute Part Grouping Explanation

Substitution eligibility for the 2SD882-O-BP is determined by the following critical parameters:

Primary Matching Criteria:

Transistor Type: NPN configuration
Current Rating: Minimum 3A collector current capacity
Voltage Rating: Minimum 30V collector-emitter breakdown voltage
Mounting Type: Through-hole configuration
Package Compatibility: TO-126 or equivalent mechanical footprint

Secondary Considerations:

Power dissipation capability
Transition frequency performance
DC current gain characteristics
Operating temperature range

Substitute parts must satisfy all primary matching criteria to ensure functional equivalence in the target application circuit.

Parameter Comparison

Parameter	2SD882-O-BP (Micro Commercial Co)	2SD882 (STMicroelectronics)	MJE180STU (Fairchild Semiconductor)
Product Status	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) Max	3 A	3 A	3 A
Voltage - Collector Emitter Breakdown (Max)	30 V	30 V	40 V
Power - Max	1.25 W	12.5 W	1.5 W
Frequency - Transition	50 MHz	100 MHz	50 MHz
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-126-3	SOT-32 (TO-126)	TO-126-3
Operating Temperature (Max)	150°C	150°C	150°C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified

Engineering Selection Recommendations

2SD882 (STMicroelectronics): This part is the direct equivalent designation with active product status. It maintains identical collector current (3A) and collector-emitter breakdown voltage (30V) specifications. The STMicroelectronics variant offers enhanced power dissipation capability (12.5W versus 1.25W) and higher transition frequency (100MHz versus 50MHz), providing superior performance margins. ROHS3 compliance is confirmed. The SOT-32 package designation represents the same mechanical TO-126 footprint, ensuring direct board-level compatibility.

MJE180STU (Fairchild Semiconductor): This part satisfies primary matching criteria with 3A collector current and through-hole TO-126-3 packaging. The 40V collector-emitter breakdown voltage exceeds the 30V requirement, providing additional voltage margin. Transition frequency matches the original specification at 50MHz. Power dissipation (1.5W) closely aligns with the original 1.25W rating. This part is suitable for applications where the elevated voltage rating does not introduce design constraints.

Both substitute parts are active products with established supply availability, eliminating obsolescence risk associated with the original 2SD882-O-BP component.

Frequently Asked Questions (FAQ)

Q: Can the 2SD882 from STMicroelectronics directly replace the 2SD882-O-BP in existing designs?

A: Yes. Both parts share identical base product designation, collector current rating (3A), and collector-emitter breakdown voltage (30V). The SOT-32 package designation refers to the same TO-126 mechanical footprint, enabling direct pin-compatible substitution on printed circuit boards.

Q: What are the advantages of the STMicroelectronics 2SD882 over the original Micro Commercial Co part?

A: The STMicroelectronics variant provides 10× greater power dissipation capability (12.5W versus 1.25W) and double the transition frequency (100MHz versus 50MHz). These enhanced specifications offer improved thermal performance and higher-frequency operation capability while maintaining backward compatibility with the original electrical specifications.

Q: Is the MJE180STU suitable as a substitute for the 2SD882-O-BP?

A: Yes, the MJE180STU meets all primary substitution criteria: NPN configuration, 3A collector current, through-hole TO-126-3 packaging, and 150°C maximum operating temperature. The 40V collector-emitter breakdown voltage exceeds the 30V requirement. Verify that the application circuit does not impose constraints on the elevated voltage rating or different saturation voltage characteristics before implementation.

Q: What is the significance of the different Vce saturation values among these parts?

A: Vce saturation affects switching speed and power dissipation in saturated switching applications. The 2SD882-O-BP specifies 500mV at 2A, the STMicroelectronics 2SD882 specifies 1.1V at 3A, and the MJE180STU specifies 1.7V at 3A. These differences are within normal device variation for the NPN transistor category and do not preclude substitution in linear amplification or standard switching applications.

Q: Are there packaging considerations when substituting these parts?

A: All three parts utilize through-hole TO-126 package variants with identical pin configurations (TO-126-3 or SOT-32 TO-126 equivalent). No board layout modifications are required for mechanical substitution. Verify PCB hole spacing and lead diameter compatibility with your specific board design before component procurement.

Q: What compliance certifications should be verified for new designs?

A: Both the STMicroelectronics 2SD882 and the original 2SD882-O-BP are ROHS3 compliant. The MJE180STU compliance status is not specified in available documentation. For applications requiring specific environmental or regulatory compliance, confirm certification status with the component supplier before design release.

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