2SD667L-C-AP Equivalent & Substitute Parts

Part Overview

The 2SD667L-C-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features an 80 V collector-emitter breakdown voltage rating and 1 A maximum collector current capability in a through-hole TO-92 package.

The 2SD667L-C-AP is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing production requirements, maintenance operations, and system redesigns where this component is specified in existing designs.

Substiute Parts

2SD667L-C-AP
Micro Commercial CoIn Stock: 6582SD667L-C-AP Datasheet
2SD667L-C-AP
Current Part
BC63916-D74Z
onsemiIn Stock: 8311BC63916-D74Z Datasheet
BC63916-D74Z
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Power - Max 900 mW
Frequency - Transition 140 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3
DC Current Gain (hFE) (Min) 100 @ 150mA, 5V

Substitute Part Grouping Explanation

Substitution of the 2SD667L-C-AP is determined by matching the following critical electrical and mechanical parameters:

Electrical Parameters:

  • Transistor type: NPN configuration
  • Maximum collector current: 1 A
  • Collector-emitter breakdown voltage: 80 V
  • Operating temperature range: -55°C to 150°C
  • DC current gain minimum: 100 at specified test conditions

Mechanical Parameters:

  • Mounting type: Through hole
  • Package type: TO-92-3 (TO-226AA formed leads)

The BC63916-D74Z manufactured by onsemi satisfies all critical substitution criteria. Both devices share identical maximum ratings for collector current (1 A) and collector-emitter breakdown voltage (80 V), operate across the same temperature range, and are housed in the same TO-92-3 through-hole package configuration.

Parameter Comparison

Parameter 2SD667L-C-AP BC63916-D74Z Unit
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 1 A
Voltage - Collector Emitter Breakdown (Max) 80 80 V
Power - Max 900 1000 mW
Frequency - Transition 140 100 MHz
Operating Temperature Range -55 to 150 -55 to 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
DC Current Gain (hFE) (Min) 100 100 @ 150mA
RoHS Status ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Active

Engineering Selection Recommendations

The BC63916-D74Z is a direct electrical and mechanical substitute for the 2SD667L-C-AP. Both devices meet identical maximum ratings for collector current and breakdown voltage, operate across the same temperature range, and utilize the same TO-92-3 package footprint.

The BC63916-D74Z offers the following advantages:

  • Active Product Status: The BC63916-D74Z is an active product manufactured by onsemi, ensuring long-term availability and supply chain continuity compared to the obsolete 2SD667L-C-AP.
  • Regulatory Compliance: Both devices are ROHS3 compliant and carry EAR99 ECCN classification.
  • Enhanced Power Rating: The BC63916-D74Z provides 1 W maximum power dissipation versus 900 mW for the 2SD667L-C-AP, offering additional thermal margin in applications operating near maximum ratings.
  • Improved Saturation Characteristics: The BC63916-D74Z exhibits lower Vce saturation (500 mV) compared to the 2SD667L-C-AP (1 V) at identical test conditions, resulting in reduced power loss during saturation operation.

Direct pin-for-pin replacement is supported without circuit modification. The BC63916-D74Z is available in cut tape packaging with significantly higher inventory levels (8253 pcs) compared to the 2SD667L-C-AP (633 pcs).

Frequently Asked Questions (FAQ)

Q: Can the BC63916-D74Z be used as a direct replacement for the 2SD667L-C-AP without circuit modifications?

A: Yes. Both devices are NPN transistors with identical maximum collector current (1 A), collector-emitter breakdown voltage (80 V), operating temperature range (-55°C to 150°C), and TO-92-3 package configuration. Pin-for-pin replacement is supported.

Q: What are the key differences between these two devices?

A: The primary differences are product status and power rating. The BC63916-D74Z is an active product with 1 W maximum power dissipation, while the 2SD667L-C-AP is obsolete with 900 mW maximum power dissipation. The BC63916-D74Z also exhibits lower saturation voltage (500 mV versus 1 V) and lower collector cutoff current (100 nA versus 10 µA).

Q: Are both devices RoHS compliant?

A: Yes. Both the 2SD667L-C-AP and BC63916-D74Z are ROHS3 compliant.

Q: What is the significance of the different transition frequencies (140 MHz versus 100 MHz)?

A: The 2SD667L-C-AP has a higher transition frequency of 140 MHz compared to the BC63916-D74Z at 100 MHz. For applications operating below 100 MHz, this difference is not significant. For high-frequency switching applications approaching or exceeding 100 MHz, the original 2SD667L-C-AP specification should be reviewed to confirm the BC63916-D74Z meets performance requirements.

Q: Are there any moisture sensitivity considerations?

A: The 2SD667L-C-AP is rated MSL 1 (Unlimited), indicating no moisture sensitivity. The BC63916-D74Z is rated as Not Applicable for MSL. Both devices can be handled and stored using standard component practices without special moisture control measures.

Q: What packaging formats are available for each device?

A: The 2SD667L-C-AP is supplied in standard packaging. The BC63916-D74Z is available in cut tape (CT) packaging, which is suitable for automated assembly processes and offers higher inventory availability.

Request Quote (Ships tomorrow)