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2SD667L-C-AP Equivalent & Substitute Parts
Part Overview
The 2SD667L-C-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features an 80 V collector-emitter breakdown voltage rating and 1 A maximum collector current capability in a through-hole TO-92 package.
The 2SD667L-C-AP is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing production requirements, maintenance operations, and system redesigns where this component is specified in existing designs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) (Max) | 1 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Power - Max | 900 | mW |
| Frequency - Transition | 140 | MHz |
| Operating Temperature Range | -55 to 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 | — |
| DC Current Gain (hFE) (Min) | 100 | @ 150mA, 5V |
Substitute Part Grouping Explanation
Substitution of the 2SD667L-C-AP is determined by matching the following critical electrical and mechanical parameters:
Electrical Parameters:
- Transistor type: NPN configuration
- Maximum collector current: 1 A
- Collector-emitter breakdown voltage: 80 V
- Operating temperature range: -55°C to 150°C
- DC current gain minimum: 100 at specified test conditions
Mechanical Parameters:
- Mounting type: Through hole
- Package type: TO-92-3 (TO-226AA formed leads)
The BC63916-D74Z manufactured by onsemi satisfies all critical substitution criteria. Both devices share identical maximum ratings for collector current (1 A) and collector-emitter breakdown voltage (80 V), operate across the same temperature range, and are housed in the same TO-92-3 through-hole package configuration.
Parameter Comparison
| Parameter | 2SD667L-C-AP | BC63916-D74Z | Unit |
|---|---|---|---|
| Transistor Type | NPN | NPN | — |
| Current - Collector (Ic) (Max) | 1 | 1 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | 80 | V |
| Power - Max | 900 | 1000 | mW |
| Frequency - Transition | 140 | 100 | MHz |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-92-3 | TO-92-3 | — |
| DC Current Gain (hFE) (Min) | 100 | 100 | @ 150mA |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The BC63916-D74Z is a direct electrical and mechanical substitute for the 2SD667L-C-AP. Both devices meet identical maximum ratings for collector current and breakdown voltage, operate across the same temperature range, and utilize the same TO-92-3 package footprint.
The BC63916-D74Z offers the following advantages:
- Active Product Status: The BC63916-D74Z is an active product manufactured by onsemi, ensuring long-term availability and supply chain continuity compared to the obsolete 2SD667L-C-AP.
- Regulatory Compliance: Both devices are ROHS3 compliant and carry EAR99 ECCN classification.
- Enhanced Power Rating: The BC63916-D74Z provides 1 W maximum power dissipation versus 900 mW for the 2SD667L-C-AP, offering additional thermal margin in applications operating near maximum ratings.
- Improved Saturation Characteristics: The BC63916-D74Z exhibits lower Vce saturation (500 mV) compared to the 2SD667L-C-AP (1 V) at identical test conditions, resulting in reduced power loss during saturation operation.
Direct pin-for-pin replacement is supported without circuit modification. The BC63916-D74Z is available in cut tape packaging with significantly higher inventory levels (8253 pcs) compared to the 2SD667L-C-AP (633 pcs).
Frequently Asked Questions (FAQ)
Q: Can the BC63916-D74Z be used as a direct replacement for the 2SD667L-C-AP without circuit modifications?
A: Yes. Both devices are NPN transistors with identical maximum collector current (1 A), collector-emitter breakdown voltage (80 V), operating temperature range (-55°C to 150°C), and TO-92-3 package configuration. Pin-for-pin replacement is supported.
Q: What are the key differences between these two devices?
A: The primary differences are product status and power rating. The BC63916-D74Z is an active product with 1 W maximum power dissipation, while the 2SD667L-C-AP is obsolete with 900 mW maximum power dissipation. The BC63916-D74Z also exhibits lower saturation voltage (500 mV versus 1 V) and lower collector cutoff current (100 nA versus 10 µA).
Q: Are both devices RoHS compliant?
A: Yes. Both the 2SD667L-C-AP and BC63916-D74Z are ROHS3 compliant.
Q: What is the significance of the different transition frequencies (140 MHz versus 100 MHz)?
A: The 2SD667L-C-AP has a higher transition frequency of 140 MHz compared to the BC63916-D74Z at 100 MHz. For applications operating below 100 MHz, this difference is not significant. For high-frequency switching applications approaching or exceeding 100 MHz, the original 2SD667L-C-AP specification should be reviewed to confirm the BC63916-D74Z meets performance requirements.
Q: Are there any moisture sensitivity considerations?
A: The 2SD667L-C-AP is rated MSL 1 (Unlimited), indicating no moisture sensitivity. The BC63916-D74Z is rated as Not Applicable for MSL. Both devices can be handled and stored using standard component practices without special moisture control measures.
Q: What packaging formats are available for each device?
A: The 2SD667L-C-AP is supplied in standard packaging. The BC63916-D74Z is available in cut tape (CT) packaging, which is suitable for automated assembly processes and offers higher inventory availability.
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