2SD667A-B-AP Equivalent & Substitute Parts

Part Overview

The 2SD667A-B-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 100 V, and power dissipation capability of 900 mW in a Through Hole TO-92MOD package. The 2SD667A-B-AP is classified as obsolete, making identification of functionally equivalent active alternatives necessary for ongoing design support and procurement continuity.

Substiute Parts

2SD667A-B-AP

Micro Commercial CoIn Stock: 11722SD667A-B-AP Datasheet

Current PartRFQ

ZTX453STZ

Diodes IncorporatedIn Stock: 25181ZTX453STZ Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SD667A-B-AP is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor polarity: NPN configuration required
• Maximum collector current: 1 A or greater
• Collector-emitter breakdown voltage: 100 V or greater
• Power dissipation: 900 mW or greater
• Transition frequency: 140 MHz or greater
• Operating temperature range: Must encompass -55°C to 150°C minimum

Mechanical Compatibility Criteria:

• Mounting type: Through Hole
• Package compatibility: TO-92 form factor or equivalent E-Line package with compatible lead geometry

The ZTX453STZ meets all electrical and mechanical substitution criteria. This device is manufactured by Diodes Incorporated and maintains active product status, ensuring long-term availability and supply chain reliability.

Parameter Comparison

Engineering Selection Recommendations

The ZTX453STZ is a direct functional substitute for the obsolete 2SD667A-B-AP. Selection of the ZTX453STZ is supported by the following engineering factors:

Product Status: The ZTX453STZ maintains active product status with Diodes Incorporated, ensuring sustained manufacturing, quality assurance, and supply availability. The 2SD667A-B-AP is classified as obsolete, creating procurement risk and limiting long-term design support.

Regulatory Compliance: Both devices are ROHS3 compliant and carry identical moisture sensitivity classification (MSL 1 - Unlimited), ensuring equivalent environmental and regulatory qualification pathways.

Electrical Performance: The ZTX453STZ exceeds the electrical specifications of the 2SD667A-B-AP across all critical parameters. Maximum power dissipation is increased to 1000 mW (versus 900 mW), transition frequency is increased to 150 MHz (versus 140 MHz), and maximum operating temperature is extended to 200°C (versus 150°C). These enhancements provide design margin without introducing incompatibility.

Package Compatibility: The ZTX453STZ is supplied in an E-Line package with formed leads, which is mechanically compatible with TO-92 footprints. Both devices are Through Hole mounted and suitable for identical PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can the ZTX453STZ be used as a direct replacement for the 2SD667A-B-AP without circuit modification?

A: Yes. The ZTX453STZ meets or exceeds all electrical specifications of the 2SD667A-B-AP. No circuit modifications are required for substitution. Both devices are NPN transistors with identical maximum collector current (1 A) and collector-emitter breakdown voltage (100 V). The ZTX453STZ provides additional performance margin through higher power dissipation (1000 mW versus 900 mW) and extended operating temperature range (-55°C to 200°C versus -55°C to 150°C).

Q: Are the packages physically compatible?

A: Yes. The 2SD667A-B-AP is supplied in a TO-92MOD package (TO-226-3, TO-92-3 Long Body with formed leads). The ZTX453STZ is supplied in an E-Line package with formed leads, which is mechanically compatible with standard TO-92 PCB footprints. Both devices are Through Hole mounted with identical lead spacing and orientation.

Q: What is the difference in DC current gain between these devices?

A: The 2SD667A-B-AP specifies a minimum DC current gain (hFE) of 60 at 150 mA collector current and 5 V collector-emitter voltage. The ZTX453STZ specifies a minimum DC current gain of 40 at 150 mA collector current and 10 V collector-emitter voltage. These specifications are measured at different operating points and reflect design differences between manufacturers. Circuit designs should not depend on specific hFE values; instead, use feedback networks or current-limiting resistors to ensure stable operation independent of transistor gain variation.

Q: Are both devices RoHS compliant?

A: Yes. Both the 2SD667A-B-AP and ZTX453STZ are ROHS3 compliant and carry identical moisture sensitivity level classification (MSL 1 - Unlimited). No additional environmental or regulatory qualification is required for substitution.

Q: Why is the 2SD667A-B-AP classified as obsolete?

A: The 2SD667A-B-AP is an older discrete transistor design that has been superseded by newer alternatives offering improved performance, extended temperature ranges, and enhanced reliability. Micro Commercial Co has discontinued active manufacturing and support for this device. The ZTX453STZ from Diodes Incorporated represents a modern, actively manufactured equivalent that provides equivalent or superior electrical performance with assured long-term availability.

Q: Can the ZTX453STZ be used in applications requiring the full -55°C to 150°C operating range of the 2SD667A-B-AP?

A: Yes. The ZTX453STZ operating temperature range of -55°C to 200°C fully encompasses the -55°C to 150°C range of the 2SD667A-B-AP. The extended upper temperature limit of the ZTX453STZ provides additional design margin and does not introduce any incompatibility for applications operating within the original temperature specification.