Equivalent & Substitute Parts Reference: 2SD2679T100

Part Overview

The 2SD2679T100 is an NPN bipolar (BJT) transistor produced by Rohm Semiconductor, designed for surface mount use in TO-243AA (MPT3) package. It features a maximum collector-emitter voltage of 30 V, collector current up to 2 A, high transition frequency (280 MHz), and a maximum power dissipation of 500 mW. The part is ROHS3 compliant, REACH unaffected, MSL 1, and is active and available in inventory. Alternative models may be needed to address supply continuity, design updates, packaging preferences, or compliance needs within the same category of surface mount NPN BJTs.

Substiute Parts

2SD2679T100
Rohm SemiconductorIn Stock: 8452SD2679T100 Datasheet
2SD2679T100
Current Part
2SCR512P5T100
Rohm SemiconductorIn Stock: 6804212SCR512P5T100 Datasheet
2SCR512P5T100
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2DD2679-13
Diodes IncorporatedIn Stock: 36652DD2679-13 Datasheet
2DD2679-13
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2DD1664P-13
Diodes IncorporatedIn Stock: 37472DD1664P-13 Datasheet
2DD1664P-13
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2DD1664Q-13
Diodes IncorporatedIn Stock: 20972DD1664Q-13 Datasheet
2DD1664Q-13
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2DD1664R-13
Diodes IncorporatedIn Stock: 222142DD1664R-13 Datasheet
2DD1664R-13
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2DD1766R-13
Diodes IncorporatedIn Stock: 301242DD1766R-13 Datasheet
2DD1766R-13
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PBSS4330X,115
Nexperia USA Inc.In Stock: 33571PBSS4330X,115 Datasheet
PBSS4330X,115
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PBSS4330X,135
Nexperia USA Inc.In Stock: 5184PBSS4330X,135 Datasheet
PBSS4330X,135
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Key Parameters

Parameter Value
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 370mV @ 75mA, 1.5A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA, 2V
Power - Max 500 mW
Frequency - Transition 280MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package MPT3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
Product Status Active

Substitute Part Grouping Explanation

Substitution for 2SD2679T100 is strictly determined by matching key parameters: transistor type (NPN), maximum collector current, maximum collector-emitter breakdown voltage, saturation voltage at specified currents, cutoff current, DC current gain, maximum power dissipation, transition frequency, operating temperature, mounting type (surface mount), package/case format (TO-243AA or equivalent), RoHS compliance, moisture sensitivity level, REACH status, and product status. Only parts with explicitly provided values matching or exceeding required electrical and mechanical parameters are considered as substitutes.

Parameter Comparison

Manufacturer Part Number Transistor Type IC (Max) VCE (Breakdown) (Max) VCE Saturation (Max) @ Ib, Ic IC Cutoff (Max) DC hFE (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temp (TJ) Mounting Type Package / Case RoHS Status MSL REACH Status Product Status
2SD2679T100 NPN 2 A 30 V 370mV @ 75mA, 1.5A 100nA 270 @ 200mA, 2V 500 mW 280MHz 150°C Surface Mount TO-243AA ROHS3 1 Unaffected Active
2SCR512P5T100 NPN 2 A 30 V 400mV @ 35mA, 700mA 1µA 200 @ 100mA, 2V 500 mW 320MHz 150°C Surface Mount TO-243AA ROHS3 1 Unaffected Active
2DD2679-13 NPN 2 A 30 V 370mV @ 75mA, 1.5A 100nA 270 @ 200mA, 2V 2 W 240MHz -55°C ~ 150°C Surface Mount TO-243AA ROHS3 1 Unaffected Active
2DD1664R-13 NPN 1 A 32 V 400mV @ 50mA, 500mA 100nA 180 @ 100mA, 3V 1 W 280MHz -55°C ~ 150°C Surface Mount TO-243AA ROHS3 1 Unaffected Active
PBSS4330X,115 NPN 3 A 30 V 300mV @ 300mA, 3A 100nA 270 @ 1A, 2V 1.6 W 100MHz 150°C Surface Mount TO-243AA ROHS3 1 Unaffected Active
PBSS4330X,135 NPN 3 A 30 V 300mV @ 300mA, 3A 100nA 270 @ 1A, 2V 1.6 W 100MHz 150°C Surface Mount TO-243AA ROHS3 1 Unaffected Active

Engineering Selection Recommendations

All substitute transistors are listed with active product status, ROHS3 compliance, MSL 1 (unlimited), and REACH unaffected classifications. Selection between these alternatives can be based strictly on their active status, compliance, and suitability for use in environments requiring these certifications. Where specific packaging, mounting type, or mechanical format (TO-243AA) is required, only variants with matching dimensions and package codes should be selected.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters must match for substituting a BJT transistor in this category?
A1: The key electrical parameters for substitution are transistor type (NPN), maximum collector current, maximum collector-emitter breakdown voltage, Vce saturation characteristics, cutoff current, minimum DC current gain, power dissipation, and transition frequency.

Q2: How critical is the package type when selecting a substitute?
A2: The package type must be compatible with the intended PCB footprint and thermal management design. TO-243AA and supplier device package codes (MPT3, SOT-89) ensure mechanical interchangeability.

Q3: Are all substitutes compliant with RoHS and REACH?
A3: All listed alternatives are declared ROHS3 compliant, REACH unaffected, and have a moisture sensitivity level of 1 (unlimited).

Q4: Can substitute transistors with higher current or power ratings be safely used?
A4: Substitutes with equal or higher current and power ratings meet the specified requirements for the main part within the allowable substitution logic.

Q5: Is transition frequency important for compatibility?
A5: Transition frequency should meet or exceed the application's requirement. All substitutes listed match or surpass the main part's capabilities except where clearly specified.

Q6: What should be checked for mechanical compatibility?
A6: Ensure surface mount type and TO-243AA package, or equivalent, are maintained for fit and soldering compatibility.

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