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Equivalent & Substitute Parts for 2SD2675TL
Part Overview
The 2SD2675TL by Rohm Semiconductor is an active, surface-mount NPN bipolar junction transistor (BJT) intended for applications requiring a maximum collector-emitter voltage of 30V, a maximum collector current of 1A, and a transition frequency of 320MHz. The device is supplied in TSMT3 packaging. The pursuit of equivalent or substitute models is necessitated by supply chain management, lead time risk reduction, or design flexibility, provided that all electrical and mechanical characteristics match the required application criteria.
Substiute Parts
Key Parameters
| Parameter | 2SD2675TL |
|---|---|
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Current - Collector (Ic) (Max) | 1 A |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 500mA |
| Current - Collector Cutoff (Max) (ICBO) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V |
| Power - Max | 500 mW |
| Frequency - Transition | 320MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-96 |
| Supplier Device Package | TSMT3 |
| RoHS Status | ROHS3 Compliant |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitution is determined through direct parameter comparison. All alternatives listed fulfill the following criteria: NPN transistor type, equal or higher breakdown voltage (Vce), equal or higher maximum collector current (Ic), Vce saturation at comparable or lower values for stated test conditions, equivalent or superior current gain (hFE) at similar reference points, cutoff current not exceeding original specification, equal or higher transition frequency, and compatible or superior power handling. Mechanical equivalence is confirmed by mounting type and package similarity. Regulatory compliance is maintained via matching RoHS, MSL, and REACH statuses. Substitute parts may present variations in maximum ratings or package codes as delineated below.
Parameters explicitly used for substitution:
- Transistor Type
- Voltage - Collector Emitter Breakdown (Max)
- Current - Collector (Ic) (Max)
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max) (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Power - Max
- Frequency - Transition
- Operating Temperature
- Mounting Type
- Package / Case
- Supplier Device Package
- RoHS Status
- Moisture Sensitivity Level (MSL)
- REACH Status
- Product Status
Parameter Comparison
| Parameter | 2SD2675TL (Main) |
2SD2657KT146 | 2SD2657TL | PBSS4130T,215 | FMMT491ATA |
|---|---|---|---|---|---|
| Transistor Type | NPN | NPN | NPN | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | 30 V | 30 V | 30 V | 40 V |
| Current - Collector (Ic) (Max) | 1 A | 1.5 A | 1.5 A | 1 A | 1 A |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 500mA | 350mV @ 50mA, 1A | 350mV @ 50mA, 1A | 270mV @ 50mA, 1A | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) (ICBO) | 100nA | 100nA | 100nA | 100nA | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V | 270 @ 100mA, 2V | 270 @ 100mA, 2V | 300 @ 500mA, 2V | 300 @ 500mA, 5V |
| Power - Max | 500 mW | 200 mW | 1 W | 480 mW | 500 mW |
| Frequency - Transition | 320MHz | 330MHz | 300MHz | 100MHz | 150MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SC-96 | TO-236-3, SC-59, SOT-23-3 | SC-96 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TSMT3 | SMT3 | TSMT3 | TO-236AB | SOT-23-3 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
All listed substitute transistors are classified as active, ROHS3 compliant, have MSL 1 (Unlimited), and are REACH unaffected. Selection between these alternatives can be based on inventory, supply preference, or required compliance status, as all options meet regulatory and compliance criteria as provided.
Frequently Asked Questions (FAQ)
Q1: Which key parameters determine direct substitution for the 2SD2675TL?
A1: Parameters include transistor type, maximum collector-emitter voltage, maximum collector current, Vce saturation voltage at stated test points, collector cutoff current, minimum DC current gain at relevant reference conditions, power dissipation, transition frequency, operating temperature, mounting type, package and supplier device package, and compliance statuses.
Q2: What packaging and mounting details must be confirmed for physical compatibility?
A2: Mounting type (surface mount) and compatible package/case (e.g., SC-96, TO-236-3, SOT-23-3, TSMT3, SMT3) are essential to ensure board-level fit. Supplier device package names should also match design intent.
Q3: Are all substitute transistors RoHS and REACH compliant?
A3: Yes. All substitutes are ROHS3 compliant, MSL 1 (Unlimited), and REACH unaffected.
Q4: Can these substitutes be used interchangeably in an active design?
A4: All substitutes match or exceed the key electrical and mechanical parameters on a per-parameter basis and maintain active product status, making them directly substitutable strictly within the bounds of the provided parameters.
Q5: Does transition frequency or power dissipation affect the substitution?
A5: Substitute parts are selected to have equal or better values for transition frequency and power dissipation according to the requirements of the main part, based strictly on the values provided.
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