2SD2406-Y(F) Equivalent & Substitute Parts

Part Overview

The 2SD2406-Y(F) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 4 A, collector-emitter breakdown voltage of 80 V, and maximum power dissipation of 25 W in a through-hole TO-220NIS package.

The 2SD2406-Y(F) is classified as obsolete. Identification of equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor.

Substiute Parts

2SD2406-Y(F)

Toshiba Semiconductor and StorageIn Stock: 10002SD2406-Y(F) Datasheet

Current PartRFQ

KSD1408YTU

Fairchild SemiconductorIn Stock: 13789KSD1408YTU Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SD2406-Y(F) is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Parameters (Must Match):

• Transistor Type: NPN
• Maximum Collector Current (Ic): 4 A
• Maximum Collector-Emitter Breakdown Voltage: 80 V
• Vce Saturation: 1.5V @ 300mA, 3A
• Maximum Collector Cutoff Current (ICBO): 30 µA
• Minimum DC Current Gain (hFE): 120 @ 500mA, 5V
• Maximum Power Dissipation: 25 W
• Transition Frequency: 8 MHz
• Maximum Operating Temperature: 150°C

Mechanical Parameters (Must Match):

• Mounting Type: Through Hole
• Package Type: TO-220-3 Full Pack

The KSD1408YTU meets all specified electrical and mechanical parameters and qualifies as a parametric equivalent substitute for the 2SD2406-Y(F).

Parameter Comparison

Engineering Selection Recommendations

The KSD1408YTU manufactured by Fairchild Semiconductor is a direct parametric equivalent to the 2SD2406-Y(F). All electrical specifications and mechanical package requirements are identical.

Status Consideration: The 2SD2406-Y(F) is classified as obsolete, while the KSD1408YTU maintains active product status. This distinction is significant for long-term supply chain planning and design continuity.

Compliance: Both devices carry ECCN classification EAR99, indicating equivalent export control status. The KSD1408YTU is suitable for direct substitution in applications currently utilizing the 2SD2406-Y(F).

Inventory Availability: The KSD1408YTU is available in significantly higher quantities (13,771 pcs) compared to the 2SD2406-Y(F) (987 pcs), supporting sustained production requirements.

Frequently Asked Questions (FAQ)

Q: Can the KSD1408YTU replace the 2SD2406-Y(F) in existing designs?

A: Yes. The KSD1408YTU meets all electrical and mechanical specifications of the 2SD2406-Y(F), including collector current, breakdown voltage, saturation characteristics, current gain, power dissipation, transition frequency, and operating temperature. Both devices use identical TO-220-3 through-hole packaging.

Q: What is the primary difference between these two parts?

A: The primary difference is manufacturer origin and product status. The 2SD2406-Y(F) is manufactured by Toshiba and is obsolete. The KSD1408YTU is manufactured by Fairchild Semiconductor and maintains active product status with higher inventory availability.

Q: Are there any package compatibility concerns?

A: No. Both the 2SD2406-Y(F) and KSD1408YTU use the TO-220-3 Full Pack configuration. Pin assignments and mechanical dimensions are compatible for direct board-level substitution.

Q: What parameters must remain identical for substitution?

A: Substitution requires matching of transistor type (NPN), maximum collector current (4 A), collector-emitter breakdown voltage (80 V), saturation voltage (1.5V @ 300mA, 3A), collector cutoff current (30 µA), DC current gain (120 @ 500mA, 5V), maximum power (25 W), transition frequency (8 MHz), operating temperature (150°C), and package type (TO-220-3 through-hole).

Q: Is the KSD1408YTU suitable for new designs?

A: Yes. The KSD1408YTU is an active product with established supply chain availability and is appropriate for both replacement and new design applications requiring 4 A, 80 V NPN transistors in TO-220 packaging.