Equivalent & Substitute Parts for 2SD2211T100Q

Part Overview

The 2SD2211T100Q (Rohm Semiconductor) is an NPN Bipolar Junction Transistor (BJT) designed for surface mount applications in the TO-243AA package. It delivers 160 V collector-emitter voltage, 1.5 A collector current, and supports up to 2 W power dissipation, with a transition frequency of 80MHz. The device is classified as "Not For New Designs," indicating that engineers should identify alternative parts for design continuity, lifecycle management, and guaranteed long-term supply.

Substiute Parts

2SD2211T100Q
Rohm SemiconductorIn Stock: 57842SD2211T100Q Datasheet
2SD2211T100Q
Current Part
2SC3649S-TD-E
onsemiIn Stock: 63482SC3649S-TD-E Datasheet
2SC3649S-TD-E
Similar
2SC3649T-TD-E
onsemiIn Stock: 21572SC3649T-TD-E Datasheet
2SC3649T-TD-E
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Key Parameters

Parameter Main Value
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 2V @ 100mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Power - Max 2 W
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts are determined based on identical transistor type, collector current (Ic), breakdown voltage (Vce), cutoff current, package/case, and mounting type. Regulatory compliance (RoHS3, REACH), moisture sensitivity level, and operational temperature are strictly matched. Variations in current gain (hFE), transition frequency, and maximum power are included only as specified in the input. All substitutes are surface mount NPN transistors with TO-243AA package and match the key electrical and mechanical characteristics allowed for substitution.

Parameter Comparison

Parameter 2SD2211T100Q 2SC3649S-TD-E 2SC3649T-TD-E
Manufacturer Rohm Semiconductor onsemi onsemi
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 2V @ 100mA, 1A 450mV @ 50mA, 500mA 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V
Power - Max 2 W 500 mW 500 mW
Frequency - Transition 80MHz 120MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The primary driver for substitution is the product status of 2SD2211T100Q, which is "Not For New Designs." Both substitute parts, 2SC3649S-TD-E and 2SC3649T-TD-E, are classified as "Active." All parts are ROHS3 Compliant, REACH Unaffected, and have a moisture sensitivity level of 1 (Unlimited). Selection should prioritize active status and compliance for uninterrupted manufacturing and supply chain assurance as permitted by the provided data.

Frequently Asked Questions (FAQ)

Q: What are the main electrical criteria for substituting 2SD2211T100Q?
Substitute selection is based on identical transistor type (NPN), maximum collector current (1.5 A), maximum collector-emitter breakdown voltage (160 V), cutoff current, and surface mount TO-243AA package.

Q: Are the substitute parts compatible with the original mounting and footprint requirements?
All identified substitutes use the TO-243AA surface mount package, matching the mechanical requirements for direct replacement.

Q: How do environmental and regulatory certifications compare?
2SD2211T100Q and substitute parts 2SC3649S-TD-E and 2SC3649T-TD-E are ROHS3 Compliant, REACH Unaffected, and have a moisture sensitivity level of 1 (Unlimited).

Q: Why is it necessary to select substitute parts for this transistor?
2SD2211T100Q is marked as "Not For New Designs." Substitutes with "Active" status should be used for new and ongoing designs to ensure supply continuity.

Q: Are there differences in electrical characteristics between the main part and substitutes?
Substitutes present lower Vce saturation voltage, lower current gain, higher transition frequency, and lower maximum power dissipation compared to the original part. All other allowed substitution parameters conform to the input.

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