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2SD2150-R-TP Equivalent & Substitute Parts
Part Overview
The 2SD2150-R-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-89 package. This component operates at a maximum collector current of 3 A with a collector-emitter breakdown voltage of 20 V and a maximum power dissipation of 500 mW. The 2SD2150-R-TP is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support, maintenance, and production continuity.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 2V |
| Power - Max | 500 mW |
| Frequency - Transition | 290MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | SOT-89 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the 2SD2150-R-TP is determined by electrical and mechanical parameter compatibility. The following criteria establish valid substitution:
Electrical Parameters (Critical):
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Mechanical Parameters (Critical):
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
Environmental Parameters:
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
The 2PD2150,115 manufactured by NXP Semiconductors meets all critical electrical and mechanical parameters, establishing it as a direct substitute for the obsolete 2SD2150-R-TP.
Parameter Comparison
| Parameter | 2SD2150-R-TP (Micro Commercial Co) | 2PD2150,115 (NXP Semiconductors) | Compatibility |
|---|---|---|---|
| Transistor Type | NPN | NPN | Match |
| Current - Collector (Ic) (Max) | 3 A | 3 A | Match |
| Voltage - Collector Emitter Breakdown (Max) | 20 V | 20 V | Match |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A | 500mV @ 100mA, 2A | Match |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | Match |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 2V | 180 @ 100mA, 2V | Match |
| Power - Max | 500 mW | 2 W | Substitute Exceeds |
| Frequency - Transition | 290MHz | 220MHz | Substitute Lower |
| Operating Temperature (Max) | 150°C (TJ) | 150°C (TJ) | Match |
| Mounting Type | Surface Mount | Surface Mount | Match |
| Package / Case | TO-243AA | TO-243AA | Match |
| Supplier Device Package | SOT-89 | SOT-89 | Match |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Match |
Engineering Selection Recommendations
The 2PD2150,115 is a direct substitute for the obsolete 2SD2150-R-TP based on matching electrical specifications and identical mechanical packaging. The substitute part is manufactured by NXP Semiconductors, an active product with current production status, ensuring long-term availability and supply chain continuity.
The 2PD2150,115 provides enhanced power dissipation capability (2 W versus 500 mW), which represents an improvement over the original specification and does not introduce compatibility issues in applications designed for the 2SD2150-R-TP. The transition frequency of the substitute (220MHz) is lower than the original part (290MHz); however, this parameter difference does not affect substitution validity for applications operating within the specified electrical envelope.
Both parts comply with RoHS3 standards and carry identical moisture sensitivity ratings (MSL 1), confirming environmental and regulatory compatibility. The 2PD2150,115 is classified as REACH Unaffected, providing regulatory assurance for European market applications.
Frequently Asked Questions (FAQ)
Q: Can the 2PD2150,115 be used as a direct replacement for the 2SD2150-R-TP in existing designs?
A: Yes. The 2PD2150,115 meets all critical electrical parameters (collector current, breakdown voltage, saturation voltage, current gain, and cutoff current) and shares identical mechanical packaging (SOT-89, TO-243AA). Direct substitution is valid without circuit modification.
Q: What is the significance of the power dissipation difference between the two parts?
A: The 2PD2150,115 has a maximum power rating of 2 W compared to the 2SD2150-R-TP at 500 mW. This represents an improvement in thermal capability and does not restrict substitution. Applications designed for the original 500 mW specification operate safely within the enhanced 2 W rating of the substitute.
Q: Does the lower transition frequency of the 2PD2150,115 affect circuit performance?
A: The 2PD2150,115 operates at 220MHz compared to the 2SD2150-R-TP at 290MHz. This difference does not affect substitution validity for applications operating within the specified electrical parameters. Frequency-dependent circuit performance must be evaluated based on specific application requirements.
Q: Are the packaging and pinout configurations identical?
A: Yes. Both parts use the SOT-89 package with TO-243AA case designation. Pinout and mechanical dimensions are identical, enabling direct board-level substitution without layout modification.
Q: What is the product status difference between these parts?
A: The 2SD2150-R-TP is classified as obsolete, while the 2PD2150,115 is an active product. The active status of the substitute ensures ongoing manufacturing availability and supply chain support.
Q: Are there any regulatory or compliance differences?
A: Both parts comply with RoHS3 standards and carry MSL 1 (Unlimited) moisture sensitivity ratings. The 2PD2150,115 is REACH Unaffected, confirming regulatory compliance for European applications. No compliance barriers exist to substitution.
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