2SD2129,LS4ALPSQ(M Equivalent & Substitute Parts

Part Overview

The 2SD2129,LS4ALPSQ(M is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for through-hole applications in the TO-220-3 package. This component operates at a maximum collector current of 3 A and collector-emitter breakdown voltage of 100 V, with a maximum power dissipation of 2 W. The part is classified as obsolete, necessitating identification of equivalent or substitute components for ongoing design requirements and production continuity.

Substiute Parts

2SD2129,LS4ALPSQ(M

Toshiba Semiconductor and StorageIn Stock: 7732SD2129,LS4ALPSQ(M Datasheet

Current PartRFQ

2SD1223,L1XGQ(O

Toshiba Semiconductor and StorageIn Stock: 11872SD1223,L1XGQ(O Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SD2129,LS4ALPSQ(M requires evaluation based on the following critical parameters:

Electrical Characteristics:

• Transistor type (NPN configuration)
• Maximum collector current (3 A)
• Collector-emitter breakdown voltage (100 V)
• Saturation voltage characteristics
• DC current gain (hFE)
• Power dissipation capability (2 W)

Physical & Environmental Specifications:

• Through-hole mounting compatibility
• TO-220-3 package footprint
• Operating temperature range (150°C maximum junction temperature)
• Moisture sensitivity level (MSL 1)

The 2SD1223,L1XGQ(O is identified as a substitute part within the Toshiba Semiconductor and Storage product line. However, this part is classified as a Darlington transistor configuration (NPN DARL), which represents a different internal topology compared to the standard NPN configuration of the main part. Substitution eligibility depends on circuit-level compatibility with Darlington characteristics, including higher current gain and different saturation voltage behavior.

Parameter Comparison

Engineering Selection Recommendations

The 2SD2129,LS4ALPSQ(M is an obsolete component with 757 units currently in stock. The 2SD1223,L1XGQ(O is an active product with 1,087 units available, offering improved supply chain continuity.

Product Status Consideration: The substitute part maintains active product status with Toshiba Semiconductor and Storage, ensuring ongoing availability and manufacturing support. The main part's obsolete classification creates long-term supply risk.

Compliance & Certifications: Both parts share identical Moisture Sensitivity Level (MSL 1 - Unlimited), indicating equivalent handling and storage requirements. The substitute part carries explicit RoHS Compliance certification, whereas the main part does not specify RoHS status. Both parts carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Critical Limitation: The substitute part is specified as a Darlington configuration (NPN DARL), which differs fundamentally from the standard NPN topology of the main part. Insufficient electrical parameter data is provided for the 2SD1223,L1XGQ(O to confirm equivalence in collector current, breakdown voltage, saturation voltage, or power dissipation. Package and mounting type specifications are not provided for the substitute part, preventing confirmation of mechanical compatibility with TO-220-3 footprints.

Substitution is not recommended without circuit-level analysis and verification of Darlington-specific characteristics against original design requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1223,L1XGQ(O directly replace the 2SD2129,LS4ALPSQ(M in existing designs?

A: Direct replacement cannot be confirmed based on available data. The 2SD1223,L1XGQ(O is a Darlington transistor, which has different internal topology and electrical characteristics compared to the standard NPN configuration of the 2SD2129,LS4ALPSQ(M. Complete electrical parameter specifications for the substitute part are required for compatibility assessment.

Q: What is the primary reason for seeking a substitute for the 2SD2129,LS4ALPSQ(M?

A: The 2SD2129,LS4ALPSQ(M is classified as obsolete. Although 757 units are currently in stock, long-term availability cannot be guaranteed. The 2SD1223,L1XGQ(O maintains active product status, providing improved supply chain reliability.

Q: Are the moisture sensitivity levels equivalent between the two parts?

A: Yes. Both the 2SD2129,LS4ALPSQ(M and 2SD1223,L1XGQ(O carry MSL 1 (Unlimited) classification, indicating identical moisture handling and storage requirements.

Q: Does the substitute part meet RoHS compliance requirements?

A: The 2SD1223,L1XGQ(O is explicitly RoHS Compliant. The RoHS status of the 2SD2129,LS4ALPSQ(M is not specified in available documentation.

Q: What package information is available for the substitute part?

A: Package and case specifications are not provided in the available data for the 2SD1223,L1XGQ(O. Confirmation of TO-220-3 compatibility or alternative package compatibility must be obtained from the manufacturer.

Q: What electrical parameters should be verified before substitution?

A: The following parameters must be confirmed for the 2SD1223,L1XGQ(O: maximum collector current (Ic), collector-emitter breakdown voltage (VCEO), saturation voltage (VCE sat), DC current gain (hFE), and maximum power dissipation. Darlington-specific characteristics, including base-emitter voltage drop and switching speed, must be evaluated against circuit requirements.