Equivalent & Substitute Parts for Sanken Electric 2SD2014

Part Overview

The Sanken Electric USA Inc. 2SD2014 is an NPN Darlington Bipolar Junction Transistor (BJT) in the "Transistors, Bipolar (BJT)" category. It is specified for 80 V collector-emitter breakdown voltage, 4 A collector current, 25 W power dissipation, 75 MHz transition frequency, and is packaged in a TO-220F (TO-220-3 Full Pack) case for through-hole mounting. The product is active and RoHS compliant. Identifying alternative models is necessary for design flexibility, continued production, and coverage in case of supply chain disruptions.

Key Parameters

Parameter	2SD2014	KSD1408YTU
Transistor Type	NPN - Darlington	NPN
Current - Collector (Ic) (Max)	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 3mA, 3A	1.5V @ 300mA, 3A
Current - Collector Cutoff (Max)	10µA (ICBO)	30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V	120 @ 500mA, 5V
Power - Max	25 W	25 W
Frequency - Transition	75 MHz	8 MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack
Supplier Device Package	TO-220F	TO-220F-3
RoHS Status	RoHS Compliant	Not specified
Product Status	Active	Active
Inventory	2170 Pcs	13771 Pcs

Substitute Part Grouping Explanation

Substitution eligibility for transistors in the Bipolar (BJT) category is strictly determined by matching or exceeding the following key parameters: transistor type, maximum collector current (Ic), maximum collector-emitter breakdown voltage (Vce), maximum power dissipation, mounting type, package/case, and maximum operating temperature. These parameters ensure electrical and mechanical interchangeability within the same application constraints.

Parameter Comparison

Manufacturer Part Number	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Product Status
2SD2014	NPN - Darlington	4 A	80 V	1.5V @ 3mA, 3A	10µA (ICBO)	2000 @ 3A, 2V	25 W	75 MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	Active
KSD1408YTU	NPN	4 A	80 V	1.5V @ 300mA, 3A	30µA (ICBO)	120 @ 500mA, 5V	25 W	8 MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	Active

Engineering Selection Recommendations

The Sanken Electric USA Inc. 2SD2014 and Fairchild Semiconductor KSD1408YTU are indicated as active products in the Transistors, Bipolar (BJT) category. The 2SD2014 is specified as RoHS compliant. Product status and available inventory should be considered based on current compliance and supply requirements. No additional compliance or certification details are provided for the KSD1408YTU.

Frequently Asked Questions (FAQ)

Q1: What key parameters are required to select a substitute for the 2SD2014 in the Transistors, Bipolar (BJT) category?
A1: The substitute must match or exceed collector current (Ic), collector-emitter breakdown voltage (Vce), power dissipation, mounting type, and package/case.

Q2: Are both the 2SD2014 and KSD1408YTU suitable for through-hole mounting?
A2: Both transistors specify through-hole mounting and the TO-220-3 Full Pack case.

Q3: What differences exist in electrical characteristics between 2SD2014 and KSD1408YTU?
A3: Differences are observed in DC current gain (hFE), transition frequency, and collector cutoff current. The 2SD2014 is a Darlington type with higher hFE and transition frequency.

Q4: Is RoHS compliance specified for both the main and substitute part?
A4: RoHS compliance is specified for the 2SD2014. No RoHS status is provided for the KSD1408YTU.

Q5: Are the mechanical packages directly compatible between the two models?
A5: Both parts use the TO-220-3 Full Pack case, ensuring mechanical compatibility for mounting.

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