2SD2012-BP Equivalent & Substitute Parts

Part Overview

The 2SD2012-BP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. Specified for 60 V collector-emitter breakdown voltage and 3 A maximum collector current in a TO-220AB through-hole package, this device delivers 2 W maximum power dissipation with a 3 MHz transition frequency.

The 2SD2012-BP is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor specification.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	3	A
Power - Max	2	W
Frequency - Transition	3	MHz
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Operating Temperature Range	-55 to 150	°C

Substitute Part Grouping Explanation

Substitution of the 2SD2012-BP is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Frequency - Transition: 3 MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 family

Substitution Logic: Parts meeting all mandatory criteria are classified as direct substitutes. Variations in secondary parameters such as power dissipation rating, DC current gain, saturation voltage, and cutoff current do not disqualify substitution provided the part operates within the application's electrical requirements and maintains the same physical footprint and pin configuration.

The substitute parts identified—TIP31AG, KSD2012GTU, and KSD880YTU—satisfy all mandatory equivalence criteria and are therefore suitable for direct replacement in applications designed for the 2SD2012-BP.

Parameter Comparison

Parameter	2SD2012-BP	TIP31AG	KSD2012GTU	KSD880YTU
Manufacturer	Micro Commercial Co	onsemi	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	60 V	60 V
Current - Collector (Ic) (Max)	3 A	3 A	3 A	3 A
Power - Max	2 W	2 W	25 W	30 W
Frequency - Transition	3 MHz	3 MHz	3 MHz	3 MHz
Vce Saturation (Max) @ Ib, Ic	1 V @ 200 mA, 2 A	1.2 V @ 375 mA, 3 A	1 V @ 200 mA, 2 A	1 V @ 300 mA, 3 A
Current - Collector Cutoff (Max)	100 µA (ICBO)	300 µA	100 µA (ICBO)	100 µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500 mA, 5 V	10 @ 3 A, 4 V	150 @ 500 mA, 5 V	100 @ 500 mA, 5 V
Operating Temperature Range	-55 to 150 °C	-65 to 150 °C	—150 °C	—150 °C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3 Full Pack	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Not Applicable	Vendor Undefined	Not Applicable

Engineering Selection Recommendations

TIP31AG (onsemi): TIP31AG is an active product with ROHS3 compliance and extended operating temperature range (-65 to 150 °C). This part meets all mandatory electrical and mechanical substitution criteria. The higher collector cutoff current (300 µA versus 100 µA) and lower DC current gain at 3 A operation represent measurable differences that do not prevent substitution in applications designed for the 2SD2012-BP. Moisture sensitivity is not applicable, indicating robust packaging. TIP31AG is suitable for new designs and production continuity.

KSD2012GTU (Fairchild Semiconductor): KSD2012GTU maintains identical saturation voltage and collector cutoff current specifications to the 2SD2012-BP, providing the closest electrical match. The 25 W power rating exceeds the original 2 W specification, offering enhanced thermal performance. This part is active and meets all mandatory substitution criteria. RoHS and REACH status are not specified in the provided data. KSD2012GTU is suitable for applications requiring thermal margin improvement.

KSD880YTU (onsemi): KSD880YTU is an active product with ROHS3 compliance and identical DC current gain and collector cutoff current to the 2SD2012-BP. The 30 W power rating provides superior thermal capability. This part meets all mandatory electrical and mechanical substitution criteria. Moisture sensitivity is not applicable. KSD880YTU is suitable for applications requiring enhanced power dissipation capability.

Frequently Asked Questions (FAQ)

Q: Can TIP31AG, KSD2012GTU, and KSD880YTU be used interchangeably with the 2SD2012-BP?

A: Yes. All three substitute parts satisfy the mandatory equivalence criteria: NPN transistor type, 60 V collector-emitter breakdown voltage, 3 A maximum collector current, 3 MHz transition frequency, through-hole mounting, and TO-220-3 package family. Pin configuration and electrical operation are compatible with applications designed for the 2SD2012-BP.

Q: What are the differences in power dissipation between the main part and substitutes?

A: The 2SD2012-BP is rated for 2 W maximum power dissipation. TIP31AG maintains the 2 W rating. KSD2012GTU is rated for 25 W, and KSD880YTU for 30 W. Higher power ratings indicate improved thermal performance and do not prevent substitution; they provide additional thermal margin in applications.

Q: Are there differences in DC current gain between these parts?

A: Yes. The 2SD2012-BP specifies 100 hFE (min) at 500 mA and 5 V. TIP31AG specifies 10 hFE (min) at 3 A and 4 V. KSD2012GTU specifies 150 hFE (min) at 500 mA and 5 V. KSD880YTU specifies 100 hFE (min) at 500 mA and 5 V. These variations reflect different measurement conditions and do not disqualify substitution.

Q: What is the significance of the TO-220-3 package designation?

A: TO-220-3 indicates a three-lead through-hole package with identical pin configuration and physical footprint across all substitute parts. This ensures mechanical compatibility and direct board-level replacement without layout modification.

Q: Which substitute part should be selected for new designs?

A: Selection depends on application requirements. TIP31AG is recommended for designs requiring active product status and extended temperature range. KSD2012GTU or KSD880YTU are recommended for applications requiring enhanced power dissipation capability. All three parts are electrically and mechanically compatible with the 2SD2012-BP specification.

Q: Are all substitute parts RoHS compliant?

A: TIP31AG and KSD880YTU are ROHS3 compliant. KSD2012GTU RoHS status is not specified in the provided data. Compliance verification with the component supplier is recommended for applications with RoHS requirements.

Q: What is the operating temperature range for each part?

A: The 2SD2012-BP operates from -55 to 150 °C. TIP31AG operates from -65 to 150 °C, providing extended low-temperature capability. KSD2012GTU and KSD880YTU operating temperature ranges are specified as 150 °C maximum without lower limit specification in the provided data.

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