2SD1980TL Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor 2SD1980TL is an NPN Darlington Bipolar Junction Transistor in the "Transistors, Bipolar (BJT)" category. It has a maximum collector-emitter voltage of 100 V, a collector current up to 2 A, and a maximum power dissipation of 10 W. The device is provided in a surface-mount TO-252-3, DPAK (2 Leads + Tab), SC-63 package type and has a maximum operating junction temperature of 150°C. The 2SD1980TL is marked as "Not For New Designs," making the identification of equivalent and substitute models critical for ongoing and future engineering applications.

Key Parameters

Parameter	2SD1980TL
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 2V
Power - Max	10 W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute and equivalent BJTs for the 2SD1980TL are grouped strictly based on the following allowed electrical and mechanical parameters:

Transistor Type (NPN or NPN - Darlington)
Maximum Collector Current (Ic)
Maximum Collector-Emitter Breakdown Voltage (Vce)
Power Handling Capability
DC Current Gain (hFE) at specified test conditions
Maximum Collector Cutoff Current (ICBO)
Vce Saturation (at given Ib, Ic)
Mounting Type (Surface Mount)
Package / Case (TO-252-3, DPAK, SC-63)
Operating Temperature
RoHS and REACH Compliance

Devices in the same surface-mount package and meeting the specified electrical ratings are listed as acceptable substitutes.

Parameter Comparison

Parameter	2SD1980TL (Rohm)	2SC4135S-TL-E (onsemi)	2SC4135T-TL-E (onsemi)	MJD112T4 (STMicro)	NJVMJD112G (onsemi)
Transistor Type	NPN - Darlington	NPN	NPN	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	2 A	2 A	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A	400mV @ 100mA, 1A	400mV @ 100mA, 1A	3V @ 40mA, 4A	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	10µA (ICBO)	100nA (ICBO)	100nA (ICBO)	20µA	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 2V	140 @ 100mA, 5V	200 @ 100mA, 5V	1000 @ 2A, 3V	1000 @ 2A, 3V
Power - Max	10 W	1 W	1 W	20 W	1.75 W
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPAK, SC-63	TO-252-3, DPAK, SC-63	TO-252-3, DPAK, SC-63	TO-252-3, DPAK, SC-63	TO-252-3, DPAK, SC-63
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Product status and compliance are critical in selecting substitute parts. The 2SD1980TL is designated "Not For New Designs," making substitutes with "Active" status preferable for design longevity unless matching only legacy support. All substitute parts listed are ROHS3 Compliant and REACH Unaffected, aligning with required environmental standards. Reference to inventory levels and packaging type may be considered where necessary for procurement planning.

Frequently Asked Questions (FAQ)

Q1: What are the primary electrical criteria for substituting the 2SD1980TL?
A1: Key criteria are transistor type, collector current (Ic), collector-emitter voltage (Vce), current gain (hFE), cutoff current (ICBO), power handling, and Vce saturation voltage at specified test conditions.

Q2: Does package compatibility matter when substituting bipolar junction transistors of this category?
A2: Yes. All listed substitutes use the TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, which is essential for board compatibility.

Q3: Are all listed substitutes fully RoHS and REACH compliant?
A3: Yes. All referenced models, including 2SD1980TL, 2SC4135S-TL-E, 2SC4135T-TL-E, MJD112T4, and NJVMJD112G are ROHS3 Compliant and REACH Unaffected.

Q4: Is it necessary to select an "Active" part status for new designs?
A4: Based on the product status parameter, "Active" parts are suitable for new designs, especially since the 2SD1980TL is designated as "Not For New Designs."

Q5: What if my application requires an NPN - Darlington configuration?
A5: Only substitute models with "NPN - Darlington" transistor type should be used in circuits that require this configuration for proper functionality. Refer to the parameter comparison for explicit type matching.

Q6: Can parts with different power ratings be substituted directly?
A6: Substitution must remain within the specified power handling capabilities of the application to ensure reliable operation. Power ratings are explicitly provided in the comparison table.

Q7: Are operating temperature ranges consistent across these substitutes?
A7: All substitutes support a maximum junction temperature of at least 150°C, matching or exceeding the main part's rating.

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