Equivalent & Substitute Parts Reference for 2SD1863TV2R

Part Overview

2SD1863TV2R from Rohm Semiconductor is an NPN Bipolar Junction Transistor (BJT), rated for 80 V, 1 A, 1 W maximum power, with a transition frequency of 100 MHz. The part features through-hole mounting in a 3-SIP package and is categorized as obsolete. Due to its obsolete status, it is necessary to identify substitute parts with equivalent electrical parameters and compliant certifications for continued design support and component replacement.

Substiute Parts

2SD1863TV2R
Rohm SemiconductorIn Stock: 51172SD1863TV2R Datasheet
2SD1863TV2R
Current Part
MMBTA06LT3G
onsemiIn Stock: 4944MMBTA06LT3G Datasheet
MMBTA06LT3G
Similar

Key Parameters

Parameter 2SD1863TV2R Value
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 80 V
Current - Collector (Ic) (Max) 1 A
Power - Max 1 W
Frequency - Transition 100 MHz
DC Current Gain (hFE) (Min) 180 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case 3-SIP
RoHS Status ROHS3 Compliant
MSL 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution is based strictly on matching the transistor type (NPN), collector-emitter voltage (80 V), frequency (100 MHz), compliance (RoHS3, REACH), and operating temperature. Key considerations are electrical equivalence, compliance certifications, and mechanical format. All substitute parts listed are analyzed for alignment to these provided operational and regulatory parameters.

Parameter Comparison

Parameter 2SD1863TV2R (Rohm Semiconductor) MMBTA06LT3G (onsemi)
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Current - Collector (Ic) (Max) 1 A 500 mA
Power - Max 1 W 225 mW
Frequency - Transition 100 MHz 100 MHz
DC Current Gain (hFE) (Min) 180 @ 500mA, 3V 100 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 500mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 1µA (ICBO) 100nA
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case 3-SIP TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

2SD1863TV2R is obsolete, with ROHS3 and REACH unaffected status. Substitute part MMBTA06LT3G is active and maintains the same compliance (ROHS3 Compliant, REACH Unaffected, MSL 1). Selection must consider the product status and regulatory certifications as specified.

Frequently Asked Questions (FAQ)

Q: What criteria are used to determine equivalent or substitute BJTs for 2SD1863TV2R?
A: Substitution is determined by matching transistor type (NPN), collector-emitter voltage rating (80 V), transition frequency (100 MHz), compliance certifications (ROHS3, REACH), and operating temperature, strictly per provided parameters.

Q: Are package differences relevant in selecting substitute BJTs?
A: Mechanical considerations such as mounting type and package (through-hole vs. surface mount, 3-SIP vs. SOT-23-3) must be evaluated for compatibility with existing board layouts. Electrical substitution is assessed independently of packaging.

Q: Is it necessary to match current and power ratings exactly between the main and substitute part?
A: Only the explicitly provided allowable parameters are considered for substitution. Value alignment in current and power ratings is relevant per the specified application requirements.

Q: Is compliance certification maintained in listed substitutes?
A: Both the main part and the substitute part listed are ROHS3 Compliant, REACH Unaffected, and have MSL 1 (unlimited), per input.

Q: Why is it necessary to find an alternative part for 2SD1863TV2R?
A: The product status is obsolete, as designated, so substitutes with equivalent key parameters and same compliance status are supplied for continued design support.

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