2SD1816S-H Equivalent & Substitute Parts

Part Overview

The 2SD1816S-H is an NPN bipolar junction transistor (BJT) manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 4 A maximum collector current. This device is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 1 W. The 2SD1816S-H is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The substitute part maintains identical electrical specifications while offering improved availability through active product status and alternative packaging configurations.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	4	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	400mV @ 200mA, 2A	—
Current - Collector Cutoff (Max)	1	µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 500mA, 5V	—
Power - Max	1	W
Frequency - Transition	180	MHz
Operating Temperature (TJ)	150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SD1816S-H is based on electrical parameter equivalence across the NPN BJT category. The substitute part 2SD1816S-TL-E maintains identical electrical specifications: 100 V collector-emitter breakdown voltage, 4 A maximum collector current, 1 W power dissipation, 180 MHz transition frequency, and matching DC current gain characteristics. Both parts share the same base product number (2SD1816) and are manufactured by onsemi, confirming functional equivalence.

The primary distinction between the main part and substitute lies in mounting technology and product status. The 2SD1816S-H uses through-hole mounting (TO-251-3 Short Leads, IPak, TO-251AA package) and is classified as obsolete. The 2SD1816S-TL-E employs surface-mount technology (TO-252-3, DPAK package) with active product status. Both devices maintain identical electrical performance parameters, RoHS3 compliance, and unlimited moisture sensitivity rating (MSL 1).

Substitution is valid when circuit design accommodates surface-mount packaging and when board-level assembly processes support DPAK footprints. Electrical performance remains unchanged across all specified operating conditions.

Parameter Comparison

Parameter	2SD1816S-H (Main Part)	2SD1816S-TL-E (Substitute)	Match Status
Manufacturer	onsemi	onsemi	Identical
Transistor Type	NPN	NPN	Identical
Current - Collector (Ic) (Max)	4 A	4 A	Identical
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	Identical
Vce Saturation (Max) @ Ib, Ic	400mV @ 200mA, 2A	400mV @ 200mA, 2A	Identical
Current - Collector Cutoff (Max)	1 µA (ICBO)	1 µA (ICBO)	Identical
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 500mA, 5V	140 @ 500mA, 5V	Identical
Power - Max	1 W	1 W	Identical
Frequency - Transition	180 MHz	180 MHz	Identical
Operating Temperature (TJ)	150 °C	150 °C	Identical
Mounting Type	Through Hole	Surface Mount	Different
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-252-3, DPAK (2 Leads + Tab), SC-63	Different
Product Status	Obsolete	Active	Different
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Identical
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Identical

Engineering Selection Recommendations

The 2SD1816S-TL-E serves as the direct electrical equivalent for the obsolete 2SD1816S-H. Selection of the substitute part is appropriate for applications where surface-mount assembly is feasible and DPAK footprint compatibility exists on the printed circuit board.

Both parts maintain ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1), ensuring compatibility with standard manufacturing and storage environments. The active product status of the 2SD1816S-TL-E provides superior long-term availability and supply chain stability compared to the obsolete 2SD1816S-H.

Electrical performance is fully preserved across all specified parameters. The transition from through-hole to surface-mount packaging represents the only functional change, which is a board-level design consideration rather than an electrical limitation.

Frequently Asked Questions (FAQ)

Q: Are the electrical specifications identical between 2SD1816S-H and 2SD1816S-TL-E?

A: Yes. Both parts are rated for 100 V collector-emitter breakdown voltage, 4 A maximum collector current, 1 W power dissipation, 180 MHz transition frequency, and 140 minimum DC current gain at specified conditions. Saturation voltage and cutoff current specifications are identical.

Q: What is the primary difference between these two parts?

A: The 2SD1816S-H uses through-hole mounting (TO-251-3 package), while the 2SD1816S-TL-E uses surface-mount technology (TO-252-3 DPAK package). The substitute part also carries active product status, whereas the main part is obsolete.

Q: Can I use 2SD1816S-TL-E as a direct replacement in existing through-hole designs?

A: No. The 2SD1816S-TL-E requires surface-mount assembly and a DPAK footprint on the circuit board. Through-hole designs cannot accommodate this package without board redesign.

Q: Are both parts RoHS compliant?

A: Yes. Both the 2SD1816S-H and 2SD1816S-TL-E are ROHS3 compliant and carry unlimited moisture sensitivity rating (MSL 1).

Q: Why is the 2SD1816S-H classified as obsolete?

A: The 2SD1816S-H is listed as obsolete by the manufacturer. The 2SD1816S-TL-E represents the active equivalent product for ongoing production and new design applications.

Q: Do these parts share the same base product number?

A: Yes. Both parts are designated as 2SD1816 base product, confirming they are functional equivalents within the onsemi product family.

Q: What packaging format is the 2SD1816S-TL-E supplied in?

A: The 2SD1816S-TL-E is supplied in Tape & Reel (TR) format, standard for surface-mount component distribution.

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