2SD1815T-E Equivalent & Substitute Parts

Part Overview

The 2SD1815T-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current. This component is designed for through-hole mounting applications requiring 1 W power dissipation capability with a transition frequency of 180 MHz. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value
Transistor Type	NPN
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max)	400 mV @ 150 mA, 1.5 A
Current - Collector Cutoff (Max)	1 µA (ICBO)
DC Current Gain (hFE) (Min)	70 @ 500 mA, 5 V
Power - Max	1 W
Frequency - Transition	180 MHz
Operating Temperature (TJ)	150°C
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Substitute Part Grouping Explanation

Substitution of the 2SD1815T-E is determined by electrical parameter equivalence across the following critical specifications:

Electrical Equivalence Criteria:

Transistor polarity: NPN
Maximum collector current: 3 A
Maximum collector-emitter breakdown voltage: 100 V
Saturation voltage characteristics: 400 mV @ 150 mA, 1.5 A
Collector cutoff current: 1 µA (ICBO)
Minimum DC current gain: 70 @ 500 mA, 5 V
Maximum power dissipation: 1 W
Transition frequency: 180 MHz
Maximum junction temperature: 150°C

Mechanical Compatibility Consideration: Substitutes may employ different mounting technologies (through-hole or surface-mount) provided all electrical parameters remain within specification. Package differences do not affect functional equivalence when electrical ratings are identical.

The 2SD1815T-E base product number 2SD1815 encompasses multiple package variants. Substitutes sharing this base product number with identical electrical specifications are considered direct functional equivalents.

Parameter Comparison

Parameter	2SD1815T-E (Main Part)	2SD1815T-TL-E (Substitute)
Manufacturer	onsemi	onsemi
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	3 A	3 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V
Vce Saturation (Max)	400 mV @ 150 mA, 1.5 A	400 mV @ 150 mA, 1.5 A
Current - Collector Cutoff (Max)	1 µA (ICBO)	1 µA (ICBO)
DC Current Gain (hFE) (Min)	70 @ 500 mA, 5 V	70 @ 500 mA, 5 V
Power - Max	1 W	1 W
Frequency - Transition	180 MHz	180 MHz
Operating Temperature (TJ)	150°C	150°C
Mounting Type	Through Hole	Surface Mount
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
Product Status	Obsolete	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99

Engineering Selection Recommendations

The 2SD1815T-E and 2SD1815T-TL-E are electrically equivalent NPN transistors manufactured by onsemi with identical electrical specifications. Both components are classified as obsolete products.

Selection Basis:

The primary distinction between these parts is mounting technology. The 2SD1815T-E utilizes through-hole mounting (TO-251-3 package), while the 2SD1815T-TL-E employs surface-mount technology (TO-252-3 DPAK package). Selection between these variants depends on circuit board assembly requirements and PCB layout design.

Both parts maintain identical electrical performance across all specified parameters, including current ratings, voltage ratings, saturation characteristics, gain specifications, power dissipation, and frequency response. Both components satisfy REACH compliance requirements and carry unlimited moisture sensitivity classification.

The 2SD1815T-TL-E substitute offers higher inventory availability (5530 pieces) compared to the main part (779 pieces), providing improved procurement accessibility for ongoing production requirements.

Frequently Asked Questions (FAQ)

Q: Are the 2SD1815T-E and 2SD1815T-TL-E electrically interchangeable?

A: Yes. Both transistors share identical electrical specifications including collector current rating (3 A), breakdown voltage (100 V), saturation voltage (400 mV @ 150 mA, 1.5 A), DC current gain (70 @ 500 mA, 5 V), power rating (1 W), and transition frequency (180 MHz). Electrical performance is equivalent.

Q: What is the primary difference between these two parts?

A: The 2SD1815T-E is configured for through-hole mounting using the TO-251-3 package, while the 2SD1815T-TL-E is designed for surface-mount assembly using the TO-252-3 DPAK package. This difference affects PCB layout and assembly process compatibility only.

Q: Can I substitute the through-hole version with the surface-mount version in an existing design?

A: Substitution requires PCB redesign to accommodate the different package footprint. The TO-251-3 through-hole package and TO-252-3 surface-mount package have different physical dimensions and mounting requirements. Circuit board layout modification is necessary.

Q: Are both parts still in production?

A: No. Both the 2SD1815T-E and 2SD1815T-TL-E are classified as obsolete products. However, inventory remains available from current stock.

Q: Do these transistors have the same compliance certifications?

A: Yes. Both parts are REACH Unaffected, carry EAR99 ECCN classification, and maintain MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the base product number for these transistors?

A: The base product number is 2SD1815. Both the 2SD1815T-E and 2SD1815T-TL-E are variants of this base product, differentiated by package type and mounting technology.

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