2SD1803T-H Equivalent & Substitute Parts

Part Overview

The 2SD1803T-H is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 5 A, collector-emitter breakdown voltage of 50 V, and a transition frequency of 180 MHz, with a maximum power dissipation of 1 W in a Through Hole TP package configuration.

The 2SD1803T-H is classified as an obsolete product. Identification of equivalent substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and equipment utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	5	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	400mV @ 150mA, 3A	—
Current - Collector Cutoff (Max)	1	µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V	—
Power - Max	1	W
Frequency - Transition	180	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SD1803T-H is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameters (Required Match):

Transistor Type: NPN
Maximum Collector Current (Ic): 5 A
Collector-Emitter Breakdown Voltage: 50 V
Vce Saturation: 400mV @ 150mA, 3A
Collector Cutoff Current (ICBO): 1 µA
DC Current Gain (hFE): 200 minimum @ 500mA, 2V
Maximum Power Dissipation: 1 W
Transition Frequency: 180 MHz
Maximum Operating Temperature: 150°C

Mechanical Parameters (Required Match):

Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Moisture Sensitivity Level: 1 (Unlimited)

The 2SD1803T-E meets all specified electrical and mechanical parameters and is classified as a parametric equivalent substitute for the 2SD1803T-H.

Parameter Comparison

Parameter	2SD1803T-H	2SD1803T-E	Match
Manufacturer	onsemi	onsemi	Yes
Transistor Type	NPN	NPN	Yes
Current - Collector (Ic) (Max)	5 A	5 A	Yes
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	Yes
Vce Saturation (Max) @ Ib, Ic	400mV @ 150mA, 3A	400mV @ 150mA, 3A	Yes
Current - Collector Cutoff (Max)	1 µA (ICBO)	1 µA (ICBO)	Yes
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V	200 @ 500mA, 2V	Yes
Power - Max	1 W	1 W	Yes
Frequency - Transition	180 MHz	180 MHz	Yes
Operating Temperature (TJ)	150°C	150°C	Yes
Mounting Type	Through Hole	Through Hole	Yes
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA	Yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Yes
REACH Status	REACH Unaffected	REACH Unaffected	Yes
ECCN	EAR99	EAR99	Yes
HTSUS	8541.29.0075	8541.29.0075	Yes

Engineering Selection Recommendations

The 2SD1803T-E is a direct parametric equivalent to the 2SD1803T-H. Both parts are manufactured by onsemi and share identical electrical specifications, mechanical packaging, and regulatory compliance status.

Product Status Consideration: Both the 2SD1803T-H and 2SD1803T-E are classified as obsolete products. The 2SD1803T-E demonstrates superior inventory availability (2015 Pcs in stock versus 980 Pcs for the 2SD1803T-H), making it the preferred selection for applications requiring component procurement.

Compliance Status: The 2SD1803T-E carries RoHS3 compliance certification, whereas the 2SD1803T-H compliance status is not specified in the provided data. Both parts maintain REACH Unaffected status and identical ECCN and HTSUS classifications.

Selection Basis: Component selection between these two parts should be based on inventory availability, delivery timeline requirements, and organizational compliance documentation standards. No electrical or mechanical redesign is required when substituting the 2SD1803T-E for the 2SD1803T-H.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1803T-E be used as a direct replacement for the 2SD1803T-H in existing circuit designs?

A: Yes. The 2SD1803T-E is a parametric equivalent with identical electrical characteristics, maximum ratings, and physical packaging. No circuit modifications are required.

Q: Are there any differences in the TO-251-3 package between these two parts?

A: No. Both parts utilize the same TO-251-3 Short Leads (IPak, TO-251AA) package configuration with identical pin assignments and mechanical dimensions suitable for Through Hole mounting.

Q: What is the significance of the RoHS3 compliance marking on the 2SD1803T-E?

A: RoHS3 compliance indicates adherence to the Restriction of Hazardous Substances Directive. This certification is relevant for applications subject to European Union environmental regulations. The 2SD1803T-H compliance status is not documented in the provided specifications.

Q: How do the DC current gain specifications compare between these parts?

A: Both parts specify a minimum DC current gain (hFE) of 200 at collector current of 500mA and collector-emitter voltage of 2V. This parameter is identical across both devices.

Q: Is the transition frequency specification the same for both parts?

A: Yes. Both the 2SD1803T-H and 2SD1803T-E operate at a transition frequency of 180 MHz, ensuring equivalent high-frequency performance characteristics.

Q: What is the maximum power dissipation rating for these transistors?

A: Both parts are rated for a maximum power dissipation of 1 W under specified operating conditions.

Q: Are there any thermal operating temperature differences between these parts?

A: No. Both parts are rated for a maximum junction temperature (TJ) of 150°C.

Q: What moisture sensitivity level applies to these components?

A: Both parts carry a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life without moisture control requirements.

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