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2SD1803S-H Equivalent & Substitute Parts
Part Overview
The 2SD1803S-H is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 5 A, collector-emitter breakdown voltage of 50 V, and a maximum power dissipation of 1 W. The 2SD1803S-H is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain identical electrical characteristics and mechanical compatibility to ensure direct replacement without circuit redesign.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) (Max) | 5 | A |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A | — |
| Current - Collector Cutoff (Max) | 1 | µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V | — |
| Power - Max | 1 | W |
| Frequency - Transition | 180 | MHz |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | — |
Substitute Part Grouping Explanation
Substitution of the 2SD1803S-H is determined by strict equivalence across all electrical and mechanical parameters. The following criteria establish valid substitutes:
Electrical Parameters (Must Match Exactly):
- Transistor Type: NPN
- Maximum Collector Current (Ic): 5 A
- Collector-Emitter Breakdown Voltage: 50 V
- Vce Saturation: 400mV @ 150mA, 3A
- Collector Cutoff Current (ICBO): 1 µA
- DC Current Gain (hFE): 140 minimum @ 500mA, 2V
- Maximum Power Dissipation: 1 W
- Transition Frequency: 180 MHz
- Maximum Operating Temperature: 150°C
Mechanical Parameters (Must Match Exactly):
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
The 2SD1803S-E meets all specified electrical and mechanical parameters and qualifies as a parametric equivalent substitute.
Parameter Comparison
| Parameter | 2SD1803S-H (onsemi) | 2SD1803S-E (Sanyo) | Match |
|---|---|---|---|
| Transistor Type | NPN | NPN | ✓ |
| Current - Collector (Ic) (Max) | 5 A | 5 A | ✓ |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | ✓ |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A | 400mV @ 150mA, 3A | ✓ |
| Current - Collector Cutoff (Max) | 1 µA (ICBO) | 1 µA (ICBO) | ✓ |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V | 140 @ 500mA, 2V | ✓ |
| Power - Max | 1 W | 1 W | ✓ |
| Frequency - Transition | 180 MHz | 180 MHz | ✓ |
| Operating Temperature (TJ) | 150°C | 150°C | ✓ |
| Mounting Type | Through Hole | Through Hole | ✓ |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | ✓ |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The 2SD1803S-E (Sanyo) is the qualified substitute for the 2SD1803S-H. This substitution is based on complete parametric equivalence across all electrical and mechanical specifications. The 2SD1803S-E maintains active product status, ensuring continued availability and supply chain reliability compared to the obsolete 2SD1803S-H.
Both parts comply with RoHS3 and REACH regulations, and both carry ECCN classification EAR99 with HTSUS code 8541.29.0075. The 2SD1803S-E is available in bulk packaging with higher inventory levels (2200 pcs) compared to the original part.
Direct substitution is permissible without circuit modification, as all performance parameters, thermal characteristics, and package dimensions are identical.
Frequently Asked Questions (FAQ)
Q: Can the 2SD1803S-E replace the 2SD1803S-H in existing designs?
A: Yes. The 2SD1803S-E is a parametric equivalent with identical electrical ratings (5 A collector current, 50 V breakdown voltage, 1 W power dissipation, 180 MHz transition frequency) and mechanical specifications (TO-251-3 through-hole package). Direct substitution requires no circuit redesign.
Q: What is the primary reason for substitution?
A: The 2SD1803S-H is classified as obsolete. The 2SD1803S-E maintains active product status, ensuring long-term availability and supply continuity.
Q: Are there packaging differences between these parts?
A: Both parts use identical packaging: TO-251-3 Short Leads, IPak, TO-251AA through-hole configuration. The 2SD1803S-E is supplied in bulk packaging, while the 2SD1803S-H was supplied in TP (Through Hole TP) format. Physical dimensions and pin configurations are identical.
Q: Do both parts meet the same compliance standards?
A: Both the 2SD1803S-H and 2SD1803S-E are RoHS3 compliant and REACH unaffected. Both carry identical ECCN (EAR99) and HTSUS (8541.29.0075) classifications.
Q: What are the critical electrical parameters that define substitution eligibility?
A: Substitution is determined by exact matching of: collector current (5 A), collector-emitter breakdown voltage (50 V), Vce saturation (400mV @ 150mA, 3A), DC current gain (140 @ 500mA, 2V), power dissipation (1 W), and transition frequency (180 MHz).
Q: Is the 2SD1803S-E the only available substitute?
A: Based on the provided data, the 2SD1803S-E is the identified parametric equivalent. Substitution eligibility is strictly limited to parts meeting all specified electrical and mechanical parameters.
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