2SD1802T-E Equivalent & Substitute Parts

Part Overview

The 2SD1802T-E is a Bipolar (BJT) NPN transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This component features a maximum collector current of 5 A, collector-emitter breakdown voltage of 50 V, and a transition frequency of 150 MHz, with a maximum power dissipation of 1 W. The device is mounted in a Through Hole TO-251-3 (IPak) package configuration.

The 2SD1802T-E is classified as obsolete. Identification of equivalent substitute parts is necessary to maintain design continuity and ensure component availability for production, repair, and maintenance applications.

Substiute Parts

2SD1802T-E
onsemiIn Stock: 54022SD1802T-E Datasheet
2SD1802T-E
Current Part
2SD1802T-E
Fairchild SemiconductorIn Stock: 53372SD1802T-E Datasheet
2SD1802T-E
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 0.5V @ 100mA, 2A V
Current - Collector Cutoff (Max) 1 µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
Power - Max 1 W
Frequency - Transition 150 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2SD1802T-E is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Parameters (Must Match):

  • Transistor Type: NPN
  • Maximum Collector Current (Ic): 5 A
  • Maximum Collector-Emitter Breakdown Voltage: 50 V
  • Vce Saturation: 0.5 V @ 100 mA, 2 A
  • Maximum Collector Cutoff Current (ICBO): 1 µA
  • Minimum DC Current Gain (hFE): 200 @ 100 mA, 2 V
  • Maximum Power Dissipation: 1 W
  • Transition Frequency: 150 MHz
  • Maximum Operating Temperature: 150 °C

Mechanical Parameters (Must Match):

  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Compliance Parameters:

  • RoHS3 Compliance
  • Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts must satisfy all listed parameters without deviation. Parts meeting these criteria are classified as parametric equivalents and direct functional replacements.

Parameter Comparison

Parameter 2SD1802T-E (onsemi) 2SD1802T-E (Fairchild Semiconductor)
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 0.5V @ 100mA, 2A 0.5V @ 100mA, 2A
Current - Collector Cutoff (Max) 1 µA (ICBO) 1 µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V 200 @ 100mA, 2V
Power - Max 1 W 1 W
Frequency - Transition 150 MHz 150 MHz
Operating Temperature (TJ) 150 °C 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status ROHS3 Compliant Not specified
Moisture Sensitivity Level (MSL) 1 (Unlimited) Not specified

Engineering Selection Recommendations

The 2SD1802T-E manufactured by Fairchild Semiconductor is a parametric equivalent to the obsolete onsemi 2SD1802T-E. Both devices share identical electrical specifications and mechanical packaging, enabling direct functional substitution in circuit applications.

The Fairchild Semiconductor variant carries an Active product status, ensuring ongoing availability and supply chain continuity. The onsemi original is classified as Obsolete, making the Fairchild equivalent the appropriate selection for new designs, production builds, and component replenishment.

Both parts comply with ROHS3 standards and carry an MSL rating of 1 (Unlimited), indicating compatibility with standard handling and storage protocols. Selection between these variants should be based on supplier availability, lead time requirements, and procurement cost considerations.

Frequently Asked Questions (FAQ)

Q: Can the Fairchild Semiconductor 2SD1802T-E be used as a direct replacement for the onsemi 2SD1802T-E?

A: Yes. Both devices are parametric equivalents with identical electrical and mechanical specifications. Direct substitution is supported without circuit modification.

Q: What electrical parameters must match for substitution compatibility?

A: The following parameters must be identical: NPN transistor type, 5 A maximum collector current, 50 V collector-emitter breakdown voltage, 0.5 V Vce saturation at specified bias conditions, 1 µA maximum collector cutoff current, 200 minimum DC current gain, 1 W maximum power dissipation, and 150 MHz transition frequency.

Q: Are the package configurations identical?

A: Yes. Both parts use the TO-251-3 Short Leads (IPak, TO-251AA) Through Hole package. Pin configuration and mechanical dimensions are equivalent, supporting direct PCB mounting without layout modification.

Q: What is the significance of the Obsolete status for the onsemi part?

A: Obsolete status indicates that the onsemi manufacturer has discontinued production and support. The Fairchild Semiconductor equivalent, with Active status, provides continued availability and is the recommended selection for ongoing applications.

Q: Are there compliance differences between the two variants?

A: Both parts are ROHS3 compliant and carry MSL rating 1 (Unlimited). Compliance certifications are equivalent for standard industrial and commercial applications.

Q: Can these parts be used interchangeably in existing designs?

A: Yes. Identical electrical performance, mechanical packaging, and compliance certifications support interchangeable use in existing circuit designs without design review or validation.

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