2SD1801S-TL-E Equivalent & Substitute Parts

Part Overview

The 2SD1801S-TL-E is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 2 A, collector-emitter breakdown voltage of 50 V, and maximum power dissipation of 800 mW in a surface mount TP-FA package. The 2SD1801S-TL-E is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and procurement needs.

Substiute Parts

2SD1801S-TL-E
onsemiIn Stock: 34102SD1801S-TL-E Datasheet
2SD1801S-TL-E
Current Part
2SD1802T-TL-E
onsemiIn Stock: 88352SD1802T-TL-E Datasheet
2SD1802T-TL-E
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Power - Max 800 mW
Frequency - Transition 150 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2SD1801S-TL-E is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Collector-emitter breakdown voltage must be equal to or greater than 50 V
  • Maximum collector current must be equal to or greater than 2 A
  • Transition frequency must be equal to or greater than 150 MHz
  • Operating temperature rating must be equal to or greater than 150 °C
  • Maximum power dissipation must be equal to or greater than 800 mW

Mechanical Compatibility Criteria:

  • Mounting type must be Surface Mount
  • Package must be TO-252-3, DPAK (2 Leads + Tab), SC-63 or equivalent TP-FA supplier device package

The 2SD1802T-TL-E meets all substitution criteria with enhanced electrical performance characteristics while maintaining identical mechanical compatibility and regulatory compliance.

Parameter Comparison

Parameter 2SD1801S-TL-E 2SD1802T-TL-E Unit
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 2 3 A
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A 500mV @ 100mA, 2A V
Current - Collector Cutoff (Max) 100nA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 2V 200 @ 100mA, 2V
Power - Max 800 1 mW
Frequency - Transition 150 150 MHz
Operating Temperature (TJ) 150 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Active

Engineering Selection Recommendations

The 2SD1802T-TL-E is a direct substitute for the obsolete 2SD1801S-TL-E. Both devices are manufactured by onsemi and share identical mechanical packaging, electrical ratings for voltage and frequency, and regulatory compliance certifications. The 2SD1802T-TL-E provides enhanced performance with increased maximum collector current (3 A versus 2 A) and maximum power dissipation (1 W versus 800 mW), while maintaining backward compatibility with existing circuit designs.

The 2SD1802T-TL-E carries Active product status, ensuring continued availability and supply chain reliability. Both components are ROHS3 compliant, REACH unaffected, and classified under identical ECCN and HTSUS codes, confirming regulatory equivalence for procurement and deployment.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1802T-TL-E directly replace the 2SD1801S-TL-E in existing designs?

A: Yes. Both devices share identical mechanical packaging (TO-252-3, DPAK), electrical ratings for breakdown voltage (50 V) and transition frequency (150 MHz), and operating temperature range (150 °C). The 2SD1802T-TL-E provides equal or superior performance across all critical parameters.

Q: What are the key differences between these two transistors?

A: The 2SD1802T-TL-E offers higher maximum collector current (3 A versus 2 A), increased power dissipation capability (1 W versus 800 mW), and higher DC current gain (200 versus 100 at 100 mA, 2 V). The 2SD1802T-TL-E is Active, while the 2SD1801S-TL-E is Obsolete.

Q: Are there packaging differences between these parts?

A: No. Both devices use identical TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount packaging with TP-FA supplier device package designation. PCB layout and footprints are interchangeable.

Q: What is the significance of the product status difference?

A: The 2SD1801S-TL-E is classified as Obsolete, indicating discontinued manufacturing and limited availability. The 2SD1802T-TL-E is Active, ensuring ongoing production, supply chain availability, and long-term procurement reliability.

Q: Are both parts compliant with current regulatory requirements?

A: Yes. Both the 2SD1801S-TL-E and 2SD1802T-TL-E are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards for electronic component manufacturing and deployment.

Q: Can the 2SD1802T-TL-E be used in applications requiring lower current ratings?

A: Yes. The 2SD1802T-TL-E is rated for 3 A maximum collector current, exceeding the 2 A requirement of the 2SD1801S-TL-E. Applications designed for 2 A operation operate within the safe operating area of the 2SD1802T-TL-E.

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