2SD1801S-E Equivalent & Substitute Parts

Part Overview

The 2SD1801S-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 2 A maximum collector current. This device is packaged in a TO-251-3 Short Leads (IPak) configuration and is designed for through-hole mounting applications. The part carries an obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

2SD1801S-E
onsemiIn Stock: 151962SD1801S-E Datasheet
2SD1801S-E
Current Part
2SD1802S-E
onsemiIn Stock: 149552SD1802S-E Datasheet
2SD1802S-E
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 2 A
Power - Max 800 mW
Frequency - Transition 150 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100 nA
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SD1801S-E is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

  • Transistor polarity: NPN
  • Collector-emitter breakdown voltage: 50 V (minimum)
  • Mounting type: Through Hole
  • Package configuration: TO-251-3 Short Leads (IPak, TO-251AA)
  • RoHS and environmental compliance status

Allowable Parameter Variance: Substitute parts may exceed the following specifications of the 2SD1801S-E without functional degradation in applications designed for the original part:

  • Maximum collector current (Ic)
  • Maximum power dissipation
  • DC current gain (hFE)
  • Transition frequency
  • Collector cutoff current (ICBO)
  • Vce saturation voltage

The 2SD1802S-E meets all mandatory matching criteria and represents a direct substitute with enhanced current and power ratings.

Parameter Comparison

Parameter 2SD1801S-E 2SD1802S-E Unit
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Current - Collector (Ic) (Max) 2 3 A
Power - Max 800 1000 mW
Frequency - Transition 150 150 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V 140 @ 100mA, 2V
Operating Temperature (TJ) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The 2SD1802S-E is a direct substitute for the 2SD1801S-E in applications where the original part is no longer available. Both devices share identical voltage ratings, transition frequency, DC current gain characteristics, and thermal operating limits. Both maintain ROHS3 compliance and MSL Level 1 classification, ensuring compatibility with current manufacturing and environmental standards.

The 2SD1802S-E provides increased maximum collector current (3 A versus 2 A) and maximum power dissipation (1 W versus 800 mW). These enhanced ratings do not introduce incompatibility; rather, they provide additional design margin for existing applications. The identical package configuration (TO-251-3 Short Leads, IPak, TO-251AA) ensures direct mechanical and electrical interchangeability on printed circuit boards designed for the 2SD1801S-E.

Selection of the 2SD1802S-E is appropriate for new production, field replacement, and design continuation activities where the 2SD1801S-E is specified but unavailable.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1802S-E be used as a direct replacement for the 2SD1801S-E in existing designs?

A: Yes. The 2SD1802S-E is electrically and mechanically compatible with the 2SD1801S-E. Both devices are NPN transistors with identical 50 V breakdown voltage, 150 MHz transition frequency, and TO-251-3 package configuration. The 2SD1802S-E has higher current and power ratings, which do not create incompatibility in applications designed for the 2SD1801S-E.

Q: Are there any differences in pin configuration between these parts?

A: No. Both the 2SD1801S-E and 2SD1802S-E use the TO-251-3 Short Leads (IPak, TO-251AA) package with identical pin assignments. Direct board-level substitution is possible without modification.

Q: What is the significance of the higher current rating on the 2SD1802S-E?

A: The 2SD1802S-E is rated for 3 A maximum collector current compared to 2 A on the 2SD1801S-E. This higher rating provides additional operational margin and does not affect compatibility. Applications operating within the 2 A limit of the original part will function identically with the substitute.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the 2SD1801S-E and 2SD1802S-E are ROHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity classification. Both are REACH unaffected and classified under ECCN EAR99.

Q: Why is the 2SD1801S-E marked as obsolete?

A: The 2SD1801S-E carries an obsolete product status, indicating that the manufacturer has discontinued active production and support. The 2SD1802S-E, while also obsolete, remains available through component inventory channels and serves as the designated substitute for ongoing applications.

Q: Are there any thermal or frequency performance differences?

A: No. Both devices operate at identical maximum junction temperature (150°C) and transition frequency (150 MHz). DC current gain characteristics are identical at the specified test conditions (140 minimum @ 100 mA, 2 V).

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