Equivalent & Substitute Parts for 2SD1767T100Q Bipolar (BJT) Transistor

Part Overview

2SD1767T100Q is an NPN bipolar junction transistor manufactured by Rohm Semiconductor, designed for surface-mount applications. It features a maximum collector-emitter voltage of 80 V, collector current up to 700 mA, transition frequency of 120 MHz, and a power rating of 500 mW in the TO-243AA package (Supplier Device Package: MPT3). The product is classified as “Not For New Designs,” necessitating identification of substitute models for ongoing production and design continuity within the Transistors, Bipolar (BJT) category.

Key Parameters

Parameter	Value
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80 V
Current - Collector (Ic) (Max)	700 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA, 3V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	500nA (ICBO)
Frequency - Transition	120MHz
Power - Max	500 mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	MPT3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute and equivalent parts for 2SD1767T100Q are identified strictly using the following parameters: transistor type (NPN), maximum collector-emitter voltage, collector current, DC current gain (hFE), collector cutoff current (ICBO), Vce saturation voltage at specified Ib and Ic, transition frequency, power dissipation, operating temperature, mounting type, package/case, and compliance (RoHS, REACH). Only transistors matching these parameters or exceeding them in safe margins are included. Mechanical compatibility is assured by matching the surface-mount type and relevant package/case.

Parameter Comparison

Part Number	Transistor Type	V_CE Breakdown (Max)	I_C (Max)	DC Gain (hFE) (Min)	Vce Saturation (Max)	I_CBO (Max)	f_T (Transition Freq.)	Power (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	RoHS	REACH
2SD1767T100Q	NPN	80 V	700 mA	120	400mV @ 50mA, 500mA	500nA	120MHz	500 mW	150°C	Surface Mount	TO-243AA	MPT3	ROHS3	Unaffected
2SCR514PT100	NPN	80 V	700 mA	120	300mV @ 15mA, 300mA	1µA	320MHz	2 W	150°C	Surface Mount	TO-243AA	MPT3	ROHS3	Unaffected
2SCR514P5T100	NPN	80 V	700 mA	120	300mV @ 15mA, 300mA	1µA	320MHz	500 mW	150°C	Surface Mount	TO-243AA	MPT3	ROHS3	Unaffected
BCX56-16,135	NPN	80 V	1 A	100	500mV @ 50mA, 500mA	100nA	180MHz	1.25 W	150°C	Surface Mount	TO-243AA	SOT-89	ROHS3	Unaffected
BCX56-16,147	NPN	80 V	1 A	100	500mV @ 50mA, 500mA	100nA	180MHz	1.25 W	150°C	Surface Mount	TO-243AA	SOT-89	ROHS3	Unaffected

Engineering Selection Recommendations

Selection of substitute parts for 2SD1767T100Q must consider product status (“Not For New Designs”) and compliance features. All candidate substitutes listed above are classified as “Active” and have ROHS3 and REACH Unaffected statuses. Each part provides compatibility in mounting type and package, complying with established environmental and trade requirements.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria for selecting substitute BJTs for 2SD1767T100Q?
A: Substitution is strictly based on transistor type (NPN), voltage and current ratings, DC gain, cutoff currents, transition frequency, power dissipation, operating temperature, surface mount compatibility, and equivalent package/case.

Q2: Are all listed substitutes surface-mount compatible?
A: Yes, all substitute transistors feature surface mount capability with compatible packages (TO-243AA, MPT3, or SOT-89).

Q3: Does package/case variation affect selection?
A: Compatibility is determined by package/case and supplier device package. Substitute parts listed have matching or equivalent packages suitable for direct replacement within the category.

Q4: Are all substitute parts compliant with RoHS and REACH?
A: Yes, all listed substitutes are ROHS3 compliant and REACH unaffected.

Q5: Can substitution be made without testing for electrical equivalence?
A: Selection is strictly based on specified and matched parameters; only electrical and mechanical criteria from the provided data are used.

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