Equivalent & Substitute Parts Reference: 2SD1766T100R

Part Overview

The 2SD1766T100R, manufactured by Rohm Semiconductor, is an NPN bipolar junction transistor (BJT) rated for 32 V, 2 A, and 2 W power dissipation in a surface-mount MPT3 (TO-243AA) package. Key applications require high current capability, frequency up to 100 MHz, and reliable surface mount assembly. The product is listed as "Not For New Designs," requiring piece-to-piece alternatives for ongoing or future projects. Identifying direct and similar substitutes is essential for maintaining supply continuity and design compatibility.

Substiute Parts

2SD1766T100R
Rohm SemiconductorIn Stock: 1201612SD1766T100R Datasheet
2SD1766T100R
Current Part
2DD1766R-13
Diodes IncorporatedIn Stock: 301242DD1766R-13 Datasheet
2DD1766R-13
Direct
2DD1664P-13
Diodes IncorporatedIn Stock: 37472DD1664P-13 Datasheet
2DD1664P-13
Similar
2DD1664Q-13
Diodes IncorporatedIn Stock: 20972DD1664Q-13 Datasheet
2DD1664Q-13
Similar
2DD1664R-13
Diodes IncorporatedIn Stock: 222142DD1664R-13 Datasheet
2DD1664R-13
Similar

Key Parameters

Parameter Main Part
Manufacturer Part Number 2SD1766T100R
Manufacturer Rohm Semiconductor
Category Transistors, Bipolar (BJT)
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 32 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 3V
Power - Max 2 W
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Package / Case TO-243AA
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Substitute Part Grouping Explanation

Substitution is determined by strict alignment of these critical parameters:

  • Transistor Type: NPN
  • Maximum Collector Current (Ic)
  • Maximum Collector-Emitter Breakdown Voltage (Vce)
  • Maximum Collector Cutoff Current
  • Minimum DC Current Gain (hFE)
  • Collector-Emitter Saturation Voltage
  • Maximum Power Dissipation
  • Frequency - Transition
  • Operating Temperature
  • Package / Mounting compatibility
  • Regulatory/compliance status

Direct substitutes exactly match primary electrical and mechanical parameters, while similar substitutes may have lower maximum current or power ratings but remain otherwise specification-compliant within the same package outline.

Parameter Comparison

Parameter 2SD1766T100R 2DD1766R-13 2DD1664P-13 2DD1664Q-13 2DD1664R-13
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 2 A 2 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V 32 V 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A 800mV @ 200mA, 2A 400mV @ 50mA, 500mA 400mV @ 50mA, 500mA 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 3V 180 @ 500mA, 3V 82 @ 100mA, 3V 120 @ 100mA, 3V 180 @ 100mA, 3V
Power - Max 2 W 1 W 1 W 1 W 1 W
Frequency - Transition 100MHz 220MHz 280MHz 280MHz 280MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99 EAR99 EAR99

Engineering Selection Recommendations

Selection must consider the product status, regulatory compliance (RoHS3, REACH, ECCN), and mounting compatibility. The 2SD1766T100R is "Not For New Designs" and its direct substitute 2DD1766R-13 is listed as "Obsolete." Similar substitutes 2DD1664P-13, 2DD1664Q-13, and 2DD1664R-13 are listed as "Active" and maintain RoHS3, REACH, and ECCN compliance.

Frequently Asked Questions (FAQ)

Q1: Which key parameters determine direct substitutability between BJTs in this category?
A1: Transistor type, maximum collector current (Ic), maximum collector-emitter breakdown voltage (Vce), minimum DC current gain (hFE), collector-emitter saturation voltage, power dissipation, frequency, operating temperature, and package/mounting type.

Q2: If the main part is listed as "Not For New Designs," what are the implications?
A2: "Not For New Designs" indicates the part is not intended for use in newly designed products and alternatives should be used when planning new projects or revising existing designs.

Q3: Can a substitute with lower collector current or power be used?
A3: Substitute selection must be based on application circuit requirements and the replacement's maximum collector current and power dissipation ratings.

Q4: Are package and mounting type important in substitution?
A4: Yes, all substitutes listed use the TO-243AA (SOT-89-3) package and are surface mount compatible, supporting direct mechanical interchangeability.

Q5: What compliance and regulatory statuses are required for substitutes?
A5: All substitutes are listed as RoHS3 compliant, REACH unaffected, and classified as ECCN EAR99.

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