2SD1766-R-TP Equivalent & Substitute Parts Reference

Part Overview

The 2SD1766-R-TP by Micro Commercial Co is an NPN Bipolar Junction Transistor (BJT) featuring a maximum collector-emitter breakdown voltage of 32 V, collector current of 1 A, transition frequency of 100 MHz, and is housed in a SOT-89 (TO-243AA) surface-mount package. This transistor is classified as obsolete, making it essential to identify suitable substitutes with matching electrical and mechanical characteristics for product continuity in designs requiring this specific BJT.

Key Parameters

Parameter	Value
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	32 V
Vce Saturation (Max)	800mV @ 200mA, 2A
Current - Collector Cutoff (ICBO)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 3V
Power - Max	500 mW
Frequency - Transition	100 MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts for the 2SD1766-R-TP are chosen strictly based on these allowed parameters: Transistor Type (NPN), maximum Collector Current, maximum Collector-Emitter Breakdown Voltage, maximum Power Dissipation, Transition Frequency, DC Current Gain, Vce Saturation, Package / Case compatibility, Mounting Type, RoHS Compliance, and Moisture Sensitivity Level. Only parts matching these critical electrical and mechanical attributes and packaging are listed as equivalents.

Parameter Comparison

Parameter	2SD1766-R-TP (Micro Commercial Co)	2SCR293P5T100 (Rohm Semiconductor)
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	32 V	30 V
Vce Saturation (Max)	800mV @ 200mA, 2A	350mV @ 25mA, 500mA
Current - Collector Cutoff (Max)	1µA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 3V	270 @ 100mA, 2V
Power - Max	500 mW	500 mW
Frequency - Transition	100 MHz	320 MHz
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA
Power - Max	500 mW	500 mW
Supplier Device Package	SOT-89	MPT3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active

Engineering Selection Recommendations

Since the 2SD1766-R-TP is listed with an obsolete product status, continuity in design requires selecting a part with equivalent electrical parameters and mechanical compatibility. The 2SCR293P5T100 by Rohm Semiconductor is active, matches the required RoHS3 compliance and Moisture Sensitivity Level, and is compatible in mounting type and package/case. Substitution is based solely on these explicit fields.

Frequently Asked Questions (FAQ)

Q1: What key parameters must match for substituting the 2SD1766-R-TP bipolar transistor?
A1: Transistor Type, maximum Collector Current, maximum Collector-Emitter Breakdown Voltage, DC Current Gain, Vce Saturation, Power Dissipation, Frequency Transition, Package/Case, Mounting Type, RoHS Compliance, and Moisture Sensitivity Level.

Q2: Is package/case equivalency required for substitution?
A2: Yes, the mechanical package (TO-243AA/SOT-89 or equivalent) and mounting type (Surface Mount) are compulsory substitution criteria.

Q3: Can an active status substitute be used for an obsolete transistor?
A3: Yes, as long as it fulfills all explicit key electrical, mechanical, and compliance parameters.

Q4: Are RoHS and MSL levels mandatory for substitution?
A4: Yes, RoHS3 compliance and matching Moisture Sensitivity Level are part of the allowed substitution parameters.

Q5: Is the 2SCR293P5T100 a direct substitute for the 2SD1766-R-TP?
A5: Yes, the 2SCR293P5T100 fulfills all listed criteria for substitution based on the information provided.

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