2SD1683T Equivalent & Substitute Parts

Part Overview

The 2SD1683T is an NPN bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 4 A maximum collector current. This device is packaged in TO-126ML through-hole configuration and is designed for general-purpose switching and amplification applications with a maximum power dissipation of 1.5 W.

The 2SD1683T is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	4	A
Power - Max	1.5	W
Frequency - Transition	150	MHz
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 2A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V	—
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-225AA, TO-126-3	—

Substitute Part Grouping Explanation

Substitution of the 2SD1683T is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must be greater than or equal to 50 V
Maximum collector current must be greater than or equal to 4 A
Operating temperature range must support 150°C (TJ)
Through-hole mounting configuration required

Mechanical Compatibility Criteria:

Package must be compatible with TO-126-3 or equivalent through-hole footprint

The substitute parts listed below meet these criteria with the following considerations:

BD17510STU and BD17516STU are rated for 45 V collector-emitter breakdown and 3 A maximum collector current. These parts operate below the original specification for voltage and current ratings but maintain NPN configuration, through-hole mounting, and compatible package footprint.

BD437 is rated for 45 V collector-emitter breakdown and 4 A maximum collector current, matching the current rating of the original part while operating at reduced voltage specification. This part uses SOT-32-3 package, which maintains through-hole compatibility.

Parameter Comparison

Parameter	2SD1683T	BD17510STU	BD17516STU	BD437
Manufacturer	onsemi	onsemi	onsemi	STMicroelectronics
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	50 V	45 V	45 V	45 V
Current - Collector (Ic) (Max)	4 A	3 A	3 A	4 A
Power - Max	1.5 W	30 W	30 W	36 W
Frequency - Transition	150 MHz	3 MHz	3 MHz	3 MHz
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 2A	800mV @ 100mA, 1A	800mV @ 100mA, 1A	600mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V	63 @ 150mA, 2V	100 @ 150mA, 2V	30 @ 10mA, 5V
Operating Temperature (TJ)	150°C	150°C	150°C	150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Product Status	Obsolete	Last Time Buy	Active	Not For New Designs
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

BD17516STU is the primary recommended substitute. This part maintains active product status, is ROHS3 compliant, and provides the closest electrical match to the 2SD1683T with NPN configuration, compatible through-hole package, and matching DC current gain specification at 100 @ 150mA, 2V. The 45 V collector-emitter breakdown voltage and 3 A maximum collector current operate within reduced but acceptable parameters for most general-purpose switching applications.

BD437 is suitable for applications requiring 4 A collector current matching the original specification. This part is manufactured by STMicroelectronics, is ROHS3 compliant, and provides higher power dissipation capability at 36 W. However, this part is classified as "Not For New Designs" and should be used only for legacy system support or replacement applications.

BD17510STU is available as a secondary option with higher inventory levels. This part is classified as "Last Time Buy," indicating limited future availability. Selection of this part should be restricted to applications where the reduced current rating of 3 A is acceptable.

Frequently Asked Questions (FAQ)

Q: Can BD17516STU directly replace 2SD1683T in existing designs?

A: BD17516STU is mechanically and functionally compatible for through-hole mounting applications. The 45 V collector-emitter breakdown voltage is lower than the original 50 V specification, and maximum collector current is reduced from 4 A to 3 A. Circuit designs operating at or below these reduced ratings will function without modification.

Q: What is the primary difference between BD17510STU and BD17516STU?

A: Both parts share identical electrical specifications for voltage, current, and power ratings. The primary difference is product status: BD17510STU is classified as "Last Time Buy," indicating discontinued production, while BD17516STU maintains "Active" status with ongoing availability.

Q: Is BD437 suitable for high-frequency applications?

A: BD437 operates at 3 MHz transition frequency, significantly lower than the 2SD1683T specification of 150 MHz. This part is not suitable for applications requiring high-frequency switching or amplification above 3 MHz.

Q: Are all substitute parts RoHS compliant?

A: BD17510STU, BD17516STU, and BD437 are all ROHS3 compliant. The original 2SD1683T does not specify RoHS status in the provided documentation.

Q: What is the impact of reduced Vce saturation voltage in substitute parts?

A: BD17510STU and BD17516STU specify 800mV Vce saturation at 100mA, 1A compared to 500mV in the original part. BD437 specifies 600mV at 200mA, 2A. Higher saturation voltage results in increased power dissipation during saturation conditions and should be evaluated in switching applications where saturation losses are critical.

Q: Can these parts be used interchangeably in PCB designs?

A: All substitute parts use compatible through-hole package configurations (TO-126-3 or SOT-32-3) with identical pin assignments for NPN transistor base, collector, and emitter. PCB footprints designed for TO-126-3 will accommodate all listed substitutes without modification.

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