2SD1664-Q-TP Equivalent & Substitute Parts

Part Overview

The 2SD1664-Q-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 32 V, and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, necessitating identification of equivalent alternatives from active manufacturers to ensure design continuity and supply chain reliability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) Max	1	A
Voltage - Collector Emitter Breakdown (Max)	32	V
Vce Saturation (Max) @ Ib, Ic	400 mV @ 50 mA, 500 mA	—
Current - Collector Cutoff (Max)	500	nA
DC Current Gain (hFE) Min @ Ic, Vce	120 @ 100 mA, 3 V	—
Power - Max	500	mW
Frequency - Transition	150	MHz
Operating Temperature	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-243AA	—
Supplier Device Package	SOT-89	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the 2SD1664-Q-TP are identified based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Transistor Type: NPN
Current - Collector (Ic) Max: 1 A (minimum requirement)
Voltage - Collector Emitter Breakdown: ≥32 V
Vce Saturation characteristics at specified bias conditions
DC Current Gain (hFE) minimum specification
Operating Temperature range: -55°C to 150°C
Mounting Type: Surface Mount
Package / Case: TO-243AA

Substitute Classification:

Direct Substitute (Electrical & Mechanical Equivalence): The 2DD1664Q-13 from Diodes Incorporated meets all critical parameters with identical electrical specifications and package compatibility. This part is classified as active, ensuring ongoing availability.

Similar Substitute (Parameter Variance Acceptable): The 2SCR293P5T100 from Rohm Semiconductor provides functional equivalence with minor parameter deviations. The collector-emitter breakdown voltage is 30 V (versus 32 V specification), and the DC current gain is higher at 270 @ 100 mA, 2 V. These variations remain within acceptable engineering tolerances for most applications.

Parameter Comparison

Parameter	2SD1664-Q-TP (Main)	2DD1664Q-13 (Direct)	2SCR293P5T100 (Similar)
Manufacturer	Micro Commercial Co	Diodes Incorporated	Rohm Semiconductor
Product Status	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) Max	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	32 V	32 V	30 V
Vce Saturation (Max) @ Ib, Ic	400 mV @ 50 mA, 500 mA	400 mV @ 50 mA, 500 mA	350 mV @ 25 mA, 500 mA
Current - Collector Cutoff (Max)	500 nA	100 nA	100 nA
DC Current Gain (hFE) Min @ Ic, Vce	120 @ 100 mA, 3 V	120 @ 100 mA, 3 V	270 @ 100 mA, 2 V
Power - Max	500 mW	1 W	500 mW
Frequency - Transition	150 MHz	280 MHz	320 MHz
Operating Temperature	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89	SOT-89-3	MPT3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (2DD1664Q-13): The 2DD1664Q-13 from Diodes Incorporated is the primary substitute for the obsolete 2SD1664-Q-TP. This part maintains identical electrical specifications across all critical parameters, including collector current, breakdown voltage, saturation voltage, and DC current gain. The device is currently in active production status, ensuring supply chain continuity. Both parts are ROHS3 compliant with MSL 1 rating. The 2DD1664Q-13 offers enhanced performance characteristics, including higher maximum power dissipation (1 W versus 500 mW) and superior transition frequency (280 MHz versus 150 MHz), making it suitable for direct PCB substitution without circuit redesign.

For Alternative Selection (2SCR293P5T100): The 2SCR293P5T100 from Rohm Semiconductor serves as a functional alternative when the direct substitute is unavailable. This part operates within acceptable parameter ranges for most applications, with the exception of collector-emitter breakdown voltage rated at 30 V instead of 32 V. Applications operating at voltages below 30 V will experience no functional limitation. The higher DC current gain (270 versus 120) and superior transition frequency (320 MHz) provide performance advantages in switching applications. This part is also ROHS3 compliant with MSL 1 rating and active production status. Circuit validation is required when the 2 V difference in Vce measurement conditions is critical to application performance.

Frequently Asked Questions (FAQ)

Q1: Can the 2DD1664Q-13 be used as a direct drop-in replacement for the 2SD1664-Q-TP?

A: Yes. The 2DD1664Q-13 maintains identical electrical specifications for all critical parameters: 1 A collector current, 32 V breakdown voltage, 400 mV saturation voltage at specified bias conditions, and 120 minimum DC current gain. Both devices use the TO-243AA package in SOT-89 configuration. No circuit modifications are required.

Q2: What is the primary limitation of using the 2SCR293P5T100 as a substitute?

A: The 2SCR293P5T100 has a collector-emitter breakdown voltage rating of 30 V compared to the 32 V specification of the 2SD1664-Q-TP. Applications operating at voltages exceeding 30 V require the 2DD1664Q-13 or equivalent 32 V rated device. For circuits operating below 30 V, the 2SCR293P5T100 is functionally compatible.

Q3: Are there package compatibility concerns when substituting these parts?

A: All three parts use the TO-243AA package designation. However, the supplier device packages differ: SOT-89 (original), SOT-89-3 (2DD1664Q-13), and MPT3 (2SCR293P5T100). These are physically compatible surface mount packages with identical pin configurations and PCB footprints. No layout modifications are necessary.

Q4: How do the power dissipation ratings compare?

A: The 2SD1664-Q-TP and 2SCR293P5T100 are both rated at 500 mW maximum power dissipation. The 2DD1664Q-13 offers enhanced power handling at 1 W maximum. For applications approaching the 500 mW limit, the 2DD1664Q-13 provides additional thermal margin.

Q5: Do all substitute parts meet the same compliance standards?

A: Yes. The 2SD1664-Q-TP, 2DD1664Q-13, and 2SCR293P5T100 are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. All parts carry EAR99 ECCN classification. The 2DD1664Q-13 and 2SCR293P5T100 include REACH Unaffected status documentation.

Q6: What is the significance of the higher transition frequency in substitute parts?

A: The 2DD1664Q-13 (280 MHz) and 2SCR293P5T100 (320 MHz) offer superior high-frequency performance compared to the original 2SD1664-Q-TP (150 MHz). These higher transition frequencies enable faster switching operation and improved performance in RF and high-speed switching applications. For standard switching applications, this enhancement provides design margin without requiring circuit modifications.

Q7: How do DC current gain specifications differ between parts?

A: The 2SD1664-Q-TP and 2DD1664Q-13 specify minimum DC current gain of 120 @ 100 mA, 3 V. The 2SCR293P5T100 specifies 270 @ 100 mA, 2 V. The higher gain in the Rohm device reduces base drive requirements in switching circuits. The 1 V difference in Vce measurement conditions reflects different characterization methodologies and does not affect practical circuit performance.

Q8: What inventory status should influence substitution decisions?

A: The 2SD1664-Q-TP is classified as obsolete with 941 pieces in stock. The 2DD1664Q-13 (active status, 2011 pieces) and 2SCR293P5T100 (active status, 2146 pieces) both offer superior long-term supply availability. For new designs or production quantities exceeding current inventory, the active parts ensure sustained component access.

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