2SD1664-P-TP Equivalent & Substitute Parts

Part Overview

The 2SD1664-P-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-89 package. This component operates at a maximum collector current of 1 A and collector-emitter breakdown voltage of 32 V, with a maximum power dissipation of 500 mW and transition frequency of 150 MHz. The 2SD1664-P-TP is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute components must maintain electrical compatibility across critical parameters including collector current, breakdown voltage, saturation characteristics, and thermal operating range.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	1	A
Voltage - Collector Emitter Breakdown (Max)	32	V
Vce Saturation (Max) @ Ib, Ic	400 mV @ 50 mA, 500 mA	—
Current - Collector Cutoff (Max)	500	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 100 mA, 3 V	—
Power - Max	500	mW
Frequency - Transition	150	MHz
Operating Temperature	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-243AA	—
Supplier Device Package	SOT-89	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the 2SD1664-P-TP are classified based on electrical parameter compatibility and package equivalence. The primary substitution criteria are:

Critical Parameters for Substitution:

Transistor type (NPN)
Maximum collector current (1 A minimum)
Collector-emitter breakdown voltage (32 V minimum)
Vce saturation characteristics (400 mV @ 50 mA, 500 mA)
DC current gain (hFE ≥ 82 @ 100 mA, 3 V)
Operating temperature range (-55°C to 150°C)
Surface mount package compatibility (SOT-89 or equivalent TO-243AA)
RoHS3 compliance

Direct Substitute (2DD1664P-13): This part meets or exceeds all critical electrical parameters while maintaining package compatibility. The 2DD1664P-13 is manufactured by Diodes Incorporated and carries active product status, providing long-term availability. Enhanced specifications include higher power dissipation (1 W vs. 500 mW) and improved transition frequency (280 MHz vs. 150 MHz).

Similar Substitute (2SCR293P5T100): This part manufactured by Rohm Semiconductor provides functional equivalence with minor parameter variations. The collector-emitter breakdown voltage is 30 V (2 V lower than the main part), and the DC current gain is significantly higher (270 vs. 82). The transition frequency is superior at 320 MHz. This part is suitable for applications where the lower breakdown voltage is acceptable and higher gain characteristics are beneficial or neutral.

Parameter Comparison

Parameter	2SD1664-P-TP (Main)	2DD1664P-13 (Direct)	2SCR293P5T100 (Similar)
Manufacturer	Micro Commercial Co	Diodes Incorporated	Rohm Semiconductor
Product Status	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	32 V	32 V	30 V
Vce Saturation (Max) @ Ib, Ic	400 mV @ 50 mA, 500 mA	400 mV @ 50 mA, 500 mA	350 mV @ 25 mA, 500 mA
Current - Collector Cutoff (Max)	500 nA	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 100 mA, 3 V	82 @ 100 mA, 3 V	270 @ 100 mA, 2 V
Power - Max	500 mW	1 W	500 mW
Frequency - Transition	150 MHz	280 MHz	320 MHz
Operating Temperature	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89	SOT-89-3	MPT3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

2DD1664P-13 (Direct Substitute - Recommended for Primary Selection)

The 2DD1664P-13 is the preferred direct substitute for the obsolete 2SD1664-P-TP. This component is manufactured by Diodes Incorporated with active product status, ensuring long-term availability and supply chain stability. The 2DD1664P-13 maintains identical electrical specifications for all critical parameters including collector current (1 A), breakdown voltage (32 V), saturation voltage (400 mV @ 50 mA, 500 mA), and DC current gain (82 @ 100 mA, 3 V). Enhanced performance characteristics include doubled power dissipation capability (1 W vs. 500 mW) and significantly improved transition frequency (280 MHz vs. 150 MHz), providing design margin and potential performance benefits. Both components are ROHS3 compliant with MSL 1 rating and identical operating temperature ranges (-55°C to 150°C). The 2DD1664P-13 is available in higher inventory quantities (3700 Pcs) compared to the obsolete main part.

2SCR293P5T100 (Similar Substitute - Alternative Selection)

The 2SCR293P5T100 manufactured by Rohm Semiconductor is an active product suitable as an alternative substitute where the specified parameter variations are acceptable. This component maintains the critical 1 A collector current and identical operating temperature range. The collector-emitter breakdown voltage is 30 V, which is 2 V lower than the main part specification. The DC current gain is substantially higher at 270 @ 100 mA, 2 V, compared to 82 @ 100 mA, 3 V for the main part. Saturation voltage is lower (350 mV @ 25 mA, 500 mA vs. 400 mV @ 50 mA, 500 mA), and transition frequency is superior at 320 MHz. This part is ROHS3 compliant with MSL 1 rating. Selection of the 2SCR293P5T100 is appropriate for applications where the lower breakdown voltage specification does not present a constraint and where higher gain characteristics are neutral or beneficial to circuit operation.

Frequently Asked Questions (FAQ)

Q: Can the 2DD1664P-13 be used as a direct replacement for the 2SD1664-P-TP without circuit modification?

A: Yes. The 2DD1664P-13 maintains identical electrical specifications for all critical parameters including maximum collector current (1 A), collector-emitter breakdown voltage (32 V), saturation voltage (400 mV @ 50 mA, 500 mA), and DC current gain (82 @ 100 mA, 3 V). Both components operate across the same temperature range (-55°C to 150°C) and are housed in compatible TO-243AA packages. The enhanced power dissipation (1 W vs. 500 mW) and transition frequency (280 MHz vs. 150 MHz) of the 2DD1664P-13 provide additional design margin.

Q: What are the key differences between the 2DD1664P-13 and 2SCR293P5T100?

A: The 2DD1664P-13 is a direct electrical equivalent with identical breakdown voltage (32 V) and current gain specifications. The 2SCR293P5T100 has a lower breakdown voltage (30 V) and significantly higher DC current gain (270 vs. 82). The 2SCR293P5T100 exhibits lower saturation voltage and higher transition frequency. Selection depends on whether the 2 V reduction in breakdown voltage is acceptable for the application and whether higher gain characteristics are beneficial or neutral.

Q: Are the package designations SOT-89, SOT-89-3, and MPT3 compatible?

A: All three parts are housed in the TO-243AA package case, which is the standardized mechanical and electrical interface. The supplier device package designations (SOT-89, SOT-89-3, MPT3) represent manufacturer-specific naming conventions for the same physical package. Pin configuration and footprint compatibility are maintained across all three parts.

Q: What is the significance of the obsolete status of the 2SD1664-P-TP?

A: Obsolete status indicates that the 2SD1664-P-TP is no longer manufactured and existing inventory will eventually be depleted. Both substitute parts (2DD1664P-13 and 2SCR293P5T100) carry active product status, ensuring continued manufacturing and availability for future production requirements and design support.

Q: Are all three parts RoHS3 compliant?

A: Yes. The 2SD1664-P-TP (main part), 2DD1664P-13, and 2SCR293P5T100 are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level rating. All components meet environmental and regulatory requirements for commercial and industrial applications.

Q: What is the difference in transition frequency among the three parts, and does it affect substitution suitability?

A: The 2SD1664-P-TP has a transition frequency of 150 MHz, the 2DD1664P-13 operates at 280 MHz, and the 2SCR293P5T100 operates at 320 MHz. Higher transition frequency indicates improved high-frequency performance capability. For applications operating below 150 MHz, all three parts are suitable. For applications requiring higher frequency performance, the substitute parts provide enhanced capability without circuit modification.

Q: How do the saturation voltage specifications compare across the three parts?

A: The 2SD1664-P-TP and 2DD1664P-13 both specify 400 mV saturation voltage at 50 mA base current and 500 mA collector current. The 2SCR293P5T100 specifies 350 mV saturation voltage at 25 mA base current and 500 mA collector current. The lower saturation voltage of the 2SCR293P5T100 indicates reduced voltage drop in saturated switching applications, which may provide improved efficiency in certain circuit topologies.

Q: What inventory considerations should be evaluated when selecting between substitute parts?

A: The 2SD1664-P-TP (main part) has 769 Pcs in stock but is obsolete. The 2DD1664P-13 has 3700 Pcs available with active product status. The 2SCR293P5T100 has 2146 Pcs available with active product status. For new designs and long-term production, the 2DD1664P-13 is preferred due to higher inventory levels and active manufacturer support. The 2SCR293P5T100 provides an alternative with adequate inventory for immediate requirements.

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