2SD16400Q Equivalent & Substitute Parts

Part Overview

The 2SD16400Q is an NPN Darlington bipolar junction transistor manufactured by Panasonic Electronic Components, designed for through-hole applications in the TO-126B-A1 package. This device is rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current, with a maximum power dissipation of 1.2 W. The 2SD16400Q is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and production continuity.

Substiute Parts

2SD16400Q
Panasonic Electronic ComponentsIn Stock: 10592SD16400Q Datasheet
2SD16400Q
Current Part
KSD1692YS
onsemiIn Stock: 2009KSD1692YS Datasheet
KSD1692YS
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Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 2 A
Power - Max 1.2 W
DC Current Gain (hFE) (Min) 4000 @ 1A, 10V
Vce Saturation (Max) 1.5 V @ 1mA, 1A
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3

Substitute Part Grouping Explanation

Substitution of the 2SD16400Q is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor topology: NPN Darlington configuration
  • Voltage rating: Minimum 100 V collector-emitter breakdown voltage
  • Current capacity: Minimum 2 A collector current rating
  • Power dissipation: Minimum 1.2 W capability
  • DC current gain: Minimum 4000 hFE at specified operating conditions
  • Saturation voltage: Performance within acceptable switching characteristics

Mechanical Compatibility Criteria:

  • Package type: TO-126-3 or equivalent through-hole form factor
  • Mounting: Through-hole technology
  • Thermal rating: Minimum 150°C junction temperature capability

The KSD1692YS from onsemi meets or exceeds all specified electrical parameters while maintaining mechanical compatibility through identical through-hole packaging. The substitute part demonstrates superior current handling (3 A vs. 2 A) and equivalent voltage ratings, enabling direct functional replacement in applications designed for the 2SD16400Q.

Parameter Comparison

Parameter 2SD16400Q (Panasonic) KSD1692YS (onsemi) Unit
Transistor Type NPN - Darlington NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 100 100 V
Current - Collector (Ic) (Max) 2 3 A
Power - Max 1.2 1.3 W
DC Current Gain (hFE) (Min) 4000 @ 1A, 10V 4000 @ 1.5A, 2V
Vce Saturation (Max) 1.5 @ 1mA, 1A 1.2 @ 1.5mA, 1.5A V
Operating Temperature (TJ) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Product Status Obsolete Active

Engineering Selection Recommendations

The KSD1692YS is the qualified substitute for the 2SD16400Q based on the following engineering criteria:

Product Status Alignment: The KSD1692YS maintains active product status with onsemi, ensuring continued availability and manufacturing support. This addresses the obsolescence of the 2SD16400Q and provides long-term supply chain stability.

Electrical Parameter Compliance: The KSD1692YS exceeds the minimum electrical requirements of the 2SD16400Q across all critical parameters. The increased collector current rating (3 A vs. 2 A) and marginally higher power dissipation (1.3 W vs. 1.2 W) provide operational headroom without introducing incompatibility. Voltage ratings remain identical at 100 V, and DC current gain specifications are equivalent at 4000 hFE minimum.

Mechanical and Thermal Compatibility: Both devices utilize identical through-hole packaging (TO-126-3) and share the same maximum junction temperature rating of 150°C, enabling direct physical and thermal substitution without circuit board redesign.

Regulatory and Compliance Status: The KSD1692YS is RoHS3 compliant and REACH unaffected, meeting modern regulatory requirements. Both devices share identical ECCN (EAR99) and HTSUS classifications.

Frequently Asked Questions (FAQ)

Q: Can the KSD1692YS directly replace the 2SD16400Q in existing circuit designs?

A: Yes. The KSD1692YS is electrically and mechanically compatible with the 2SD16400Q. Both devices are NPN Darlington transistors with identical 100 V voltage ratings, equivalent DC current gain specifications, and identical through-hole TO-126-3 packaging. The KSD1692YS higher current rating (3 A vs. 2 A) does not create incompatibility and provides additional design margin.

Q: What are the key differences between these two parts?

A: The primary differences are manufacturer (Panasonic vs. onsemi), product status (obsolete vs. active), and maximum ratings. The KSD1692YS offers higher collector current capacity (3 A vs. 2 A) and slightly improved saturation voltage characteristics (1.2 V vs. 1.5 V). Both maintain identical voltage ratings and thermal specifications.

Q: Are there any package or pinout differences?

A: No. Both the 2SD16400Q and KSD1692YS use the TO-126-3 through-hole package with identical pinout and mechanical dimensions. No circuit board modifications are required for substitution.

Q: Why is the 2SD16400Q listed as obsolete?

A: The 2SD16400Q is classified as obsolete by Panasonic Electronic Components, indicating discontinued manufacturing and limited future availability. The KSD1692YS from onsemi provides an active, functionally equivalent alternative for new designs and production continuity.

Q: What parameters must match for substitution to be valid?

A: Substitution validity is determined by matching or exceeding the following parameters: transistor type (NPN Darlington), voltage rating (minimum 100 V), current capacity (minimum 2 A), power dissipation (minimum 1.2 W), DC current gain (minimum 4000 hFE), and through-hole package compatibility. The KSD1692YS meets or exceeds all these criteria.

Q: Is the KSD1692YS suitable for high-temperature applications?

A: Yes. The KSD1692YS maintains a maximum junction temperature rating of 150°C, identical to the 2SD16400Q, enabling operation in equivalent thermal environments.

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