2SD1618S-TD-E Equivalent & Substitute Parts

Part Overview

The 2SD1618S-TD-E is an NPN bipolar junction transistor manufactured by onsemi, designed for surface mount applications in low-power switching and amplification circuits. This device operates at a maximum collector current of 700 mA, collector-emitter breakdown voltage of 15 V, and maximum power dissipation of 500 mW. The transistor features a transition frequency of 250 MHz and is housed in a TO-243AA package with PCP supplier device packaging.

The 2SD1618S-TD-E is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and redesign efforts for legacy systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	700	mA
Voltage - Collector Emitter Breakdown (Max)	15	V
Vce Saturation (Max) @ Ib, Ic	80 mV @ 10 mA, 100 mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	140	@ 50 mA, 2 V
Power - Max	500	mW
Frequency - Transition	250	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-243AA	—
Supplier Device Package	PCP	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SD1618S-TD-E is determined by strict equivalence across the following critical parameters:

Electrical Parameters:

Transistor polarity (NPN)
Maximum collector current (700 mA)
Collector-emitter breakdown voltage (15 V)
Saturation voltage characteristics (80 mV @ 10 mA, 100 mA)
Collector cutoff current (100 nA maximum)
Transition frequency (250 MHz)
Maximum power dissipation (500 mW)
Operating temperature range (150°C maximum junction temperature)

Mechanical & Packaging Parameters:

Mounting type (Surface Mount)
Package designation (TO-243AA)
Supplier device package (PCP)
Moisture sensitivity level (MSL 1)

The 2SD1618T-TD-E meets all specified electrical and mechanical parameters and qualifies as a direct substitute. DC current gain (hFE) may vary between parts but remains within acceptable operating ranges for circuit functionality.

Parameter Comparison

Parameter	2SD1618S-TD-E	2SD1618T-TD-E	Unit
Manufacturer	onsemi	onsemi	—
Transistor Type	NPN	NPN	—
Current - Collector (Ic) (Max)	700	700	mA
Voltage - Collector Emitter Breakdown (Max)	15	15	V
Vce Saturation (Max) @ Ib, Ic	80 mV @ 10 mA, 100 mA	80 mV @ 10 mA, 100 mA	—
Current - Collector Cutoff (Max)	100	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 50 mA, 2 V	200 @ 50 mA, 2 V	—
Power - Max	500	500	mW
Frequency - Transition	250	250	MHz
Operating Temperature (TJ)	150	150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	TO-243AA	TO-243AA	—
Supplier Device Package	PCP	PCP	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
Product Status	Obsolete	Obsolete	—

Engineering Selection Recommendations

Both the 2SD1618S-TD-E and 2SD1618T-TD-E are classified as obsolete products. The 2SD1618T-TD-E is the primary substitute, offering identical electrical performance across all critical parameters including maximum ratings, saturation characteristics, and frequency response.

The 2SD1618T-TD-E demonstrates higher DC current gain (hFE minimum of 200 versus 140), which represents improved transistor efficiency and does not compromise circuit compatibility. Both devices share identical package specifications (TO-243AA, PCP), mounting type (Surface Mount), and moisture sensitivity classification (MSL 1).

The 2SD1618T-TD-E carries RoHS3 compliance certification, whereas the 2SD1618S-TD-E compliance status is not specified. Both devices maintain REACH Unaffected status and EAR99 export classification.

Current inventory availability favors the 2SD1618T-TD-E (6200 pieces) over the 2SD1618S-TD-E (845 pieces), supporting long-term supply chain continuity for legacy system support.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1618T-TD-E directly replace the 2SD1618S-TD-E in existing circuit designs?

A: Yes. Both transistors share identical electrical ratings, saturation characteristics, transition frequency, and package specifications. The higher DC current gain of the 2SD1618T-TD-E does not introduce compatibility issues and may improve circuit efficiency.

Q: What is the significance of the different DC current gain values between these parts?

A: The 2SD1618S-TD-E specifies a minimum hFE of 140 at 50 mA collector current and 2 V collector-emitter voltage, while the 2SD1618T-TD-E specifies a minimum of 200 under identical conditions. Higher current gain indicates improved transistor efficiency but does not affect maximum ratings or switching characteristics. Both values support standard amplification and switching applications.

Q: Are the package and mounting specifications identical?

A: Yes. Both devices use the TO-243AA package with PCP supplier device packaging and are configured for surface mount assembly. Pin configuration and footprint requirements are identical.

Q: What is the difference between the "S" and "T" designations in the part numbers?

A: The "S" and "T" designations represent different manufacturing batches or revisions within the 2SD1618 base product line. Both maintain the same electrical specifications and package format. The "T" variant demonstrates higher current availability in inventory.

Q: Are there any compliance or certification differences between these parts?

A: The 2SD1618T-TD-E carries RoHS3 compliance certification. Both devices maintain REACH Unaffected status and EAR99 export classification. Compliance requirements for specific applications should be verified against system-level documentation.

Q: What is the moisture sensitivity level, and why is it important?

A: Both devices carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions. These components do not require special moisture control during storage, handling, or assembly processes.

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