2SD14740P Equivalent & Substitute Parts

Part Overview

The 2SD14740P is an NPN bipolar junction transistor manufactured by Panasonic Electronic Components, rated for 60 V collector-emitter breakdown voltage and 6 A maximum collector current. This device is packaged in a TO-220-3 Full Pack configuration and is designed for through-hole mounting applications requiring 2 W power dissipation capability.

The 2SD14740P is classified as an obsolete product. Identification of equivalent substitute parts is necessary to support ongoing maintenance, repair, and production requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	6	A
Power - Max	2	W
Vce Saturation (Max)	500 mV @ 100 mA, 5 A	—
Current - Collector Cutoff (Max)	100	µA
DC Current Gain (hFE) (Min)	800 @ 1 A, 4 V	—
Frequency - Transition	30	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—

Substitute Part Grouping Explanation

Substitution of the 2SD14740P is determined by electrical and mechanical parameter compatibility within the NPN bipolar junction transistor category. The following parameters establish the substitution criteria:

Critical Matching Parameters:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60 V minimum
Power - Max: 2 W minimum
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack

Allowable Variation Parameters:

Current - Collector (Ic) (Max): Equal to or greater than 6 A
Vce Saturation (Max): Equal to or less than 500 mV at specified test conditions
Current - Collector Cutoff (Max): Equal to or less than 100 µA
DC Current Gain (hFE) (Min): Equal to or greater than 800 at specified test conditions
Frequency - Transition: Equal to or greater than 30 MHz (where specified)
Operating Temperature (TJ): Equal to or greater than 150 °C

The KSD1588YTU meets all critical matching parameters and allowable variation criteria, qualifying it as a direct substitute for the 2SD14740P.

Parameter Comparison

Parameter	2SD14740P (Panasonic)	KSD1588YTU (Fairchild Semiconductor)	Compatibility
Transistor Type	NPN	NPN	Match
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	Match
Current - Collector (Ic) (Max)	6 A	7 A	Substitute exceeds requirement
Power - Max	2 W	2 W	Match
Vce Saturation (Max)	500 mV @ 100 mA, 5 A	500 mV @ 500 mA, 5 A	Substitute meets specification
Current - Collector Cutoff (Max)	100 µA	10 µA	Substitute exceeds requirement
DC Current Gain (hFE) (Min)	800 @ 1 A, 4 V	100 @ 3 A, 1 V	Substitute specified at different test conditions
Frequency - Transition	30 MHz	Not specified	Specification not provided for substitute
Operating Temperature (TJ)	150 °C	150 °C	Match
Mounting Type	Through Hole	Through Hole	Match
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack	Match

Engineering Selection Recommendations

The KSD1588YTU is a qualified substitute for the 2SD14740P based on the following factors:

Product Status Consideration: The 2SD14740P is classified as obsolete, while the KSD1588YTU is classified as active. Selection of the active substitute ensures continued availability and supply chain stability for future procurement requirements.

Electrical Parameter Compliance: The KSD1588YTU meets or exceeds all critical electrical parameters. The maximum collector current rating of 7 A exceeds the 6 A requirement of the original part. The maximum collector cutoff current of 10 µA is superior to the 100 µA specification of the 2SD14740P. Vce saturation characteristics are equivalent at the 5 A test condition.

Mechanical and Thermal Compatibility: Both devices share identical mounting type (through hole), package configuration (TO-220-3 Full Pack), and maximum operating junction temperature (150 °C), ensuring direct physical and thermal compatibility in existing circuit board layouts and thermal management designs.

Regulatory Compliance: Both parts carry identical ECCN classification (EAR99), confirming equivalent export control status.

Frequently Asked Questions (FAQ)

Q: Can the KSD1588YTU be used as a direct replacement for the 2SD14740P in existing circuit designs?

A: Yes. The KSD1588YTU is electrically and mechanically compatible with the 2SD14740P. Both devices are NPN transistors with 60 V breakdown voltage, 2 W power rating, and TO-220-3 Full Pack configuration. The substitute part meets or exceeds all specified electrical parameters of the original part.

Q: What is the primary advantage of substituting the KSD1588YTU for the 2SD14740P?

A: The KSD1588YTU is an active product with confirmed supply availability (11,540 pcs in stock), whereas the 2SD14740P is obsolete. This substitution ensures reliable component sourcing for ongoing production and maintenance activities.

Q: Are there any electrical performance differences between these two transistors?

A: The KSD1588YTU provides higher maximum collector current (7 A versus 6 A) and lower maximum collector cutoff current (10 µA versus 100 µA). These differences represent performance improvements that maintain backward compatibility with the original 2SD14740P specification.

Q: Do both transistors use the same package configuration?

A: Yes. Both the 2SD14740P and KSD1588YTU use the TO-220-3 Full Pack configuration with through-hole mounting. No circuit board layout modifications are required for substitution.

Q: What is the operating temperature range for both devices?

A: Both transistors are rated for a maximum junction temperature (TJ) of 150 °C. Thermal management requirements remain unchanged when substituting the KSD1588YTU for the 2SD14740P.

Q: Are there any regulatory or compliance differences between these parts?

A: No. Both parts carry identical ECCN classification (EAR99) and are subject to the same export control regulations.

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