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2SD1407A-Y(F) Equivalent & Substitute Parts
Part Overview
The 2SD1407A-Y(F) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, rated for 100 V collector-emitter breakdown voltage and 5 A maximum collector current. This device is packaged in a TO-220-3 through-hole configuration and is designed for 30 W power dissipation applications with a transition frequency of 12 MHz.
The 2SD1407A-Y(F) is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for legacy systems utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 100 | V |
| Current - Collector (Ic) (Max) | 5 | A |
| Power - Max | 30 | W |
| Frequency - Transition | 12 | MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 5V | — |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 400mA, 4A | — |
| Operating Temperature (TJ) | 150 | °C |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the 2SD1407A-Y(F) is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Transistor type classification (NPN topology)
- Collector-emitter breakdown voltage rating (minimum 100 V)
- Maximum collector current capacity (minimum 5 A for direct substitution; lower ratings acceptable for current-limited applications)
- Power dissipation capability (minimum 30 W for direct substitution; lower ratings acceptable for reduced power applications)
- DC current gain (hFE) characteristics at specified operating points
- Saturation voltage performance
Mechanical Compatibility Criteria:
- Package type: TO-220-3 through-hole configuration
- Pin configuration and lead spacing
- Thermal characteristics and operating temperature range
Substitute parts are grouped based on whether they meet the full electrical specification (direct substitutes) or operate within acceptable parameter ranges for specific application contexts (functional equivalents).
Parameter Comparison
| Parameter | 2SD1407A-Y(F) | 2SD2015 | MJF31CG |
|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Sanken Electric USA Inc. | onsemi |
| Product Status | Obsolete | Active | Active |
| Transistor Type | NPN | NPN - Darlington | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 120 V | 100 V |
| Current - Collector (Ic) (Max) | 5 A | 4 A | 3 A |
| Power - Max | 30 W | 25 W | 2 W |
| Frequency - Transition | 12 MHz | 40 MHz | 3 MHz |
| DC Current Gain (hFE) (Min) | 120 @ 1A, 5V | 2000 @ 2A, 2V | 10 @ 3A, 4V |
| Vce Saturation (Max) | 2V @ 400mA, 4A | 1.5V @ 2mA, 2A | 1.2V @ 375mA, 3A |
| Operating Temperature (TJ) | 150°C | 150°C | -65°C ~ 150°C |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| RoHS Status | Not specified | RoHS Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Not Applicable |
Engineering Selection Recommendations
2SD2015 (Sanken Electric USA Inc.):
The 2SD2015 is an active product with RoHS compliance certification. It features a Darlington configuration with higher DC current gain (2000 vs. 120), elevated transition frequency (40 MHz vs. 12 MHz), and improved saturation voltage characteristics (1.5 V vs. 2 V). The collector-emitter breakdown voltage is rated at 120 V, exceeding the 2SD1407A-Y(F) specification. Maximum collector current is 4 A and power dissipation is 25 W, both slightly lower than the original part. This substitute is suitable for applications where the reduced current and power ratings are acceptable and where the Darlington configuration's higher gain and faster switching characteristics provide operational advantages.
MJF31CG (onsemi):
The MJF31CG is an active product with ROHS3 compliance and REACH unaffected status. It maintains the same 100 V collector-emitter breakdown voltage and TO-220-3 package configuration. However, the maximum collector current is limited to 3 A and power dissipation to 2 W, representing significant reductions from the original specification. The transition frequency is 3 MHz, lower than the 2SD1407A-Y(F). The DC current gain is substantially lower (10 vs. 120). This substitute is applicable only to applications with reduced current and power requirements and lower frequency operation. The extended operating temperature range (-65°C to 150°C) provides broader thermal compatibility.
Both substitute parts are active products with current manufacturer support and modern compliance certifications, addressing the obsolescence status of the 2SD1407A-Y(F).
Frequently Asked Questions (FAQ)
Q: Can the 2SD2015 directly replace the 2SD1407A-Y(F) in all applications?
A: The 2SD2015 is mechanically compatible (TO-220-3 package) and electrically compatible for most applications. However, the maximum collector current is 4 A versus 5 A, and power dissipation is 25 W versus 30 W. Applications operating at or near the 5 A or 30 W limits require verification that the reduced ratings are acceptable. The Darlington configuration introduces different gain and saturation characteristics that may affect circuit performance in precision applications.
Q: What are the key differences between the 2SD2015 and MJF31CG?
A: The 2SD2015 is a Darlington transistor with 4 A maximum collector current and 25 W power dissipation, while the MJF31CG is a standard NPN transistor with 3 A maximum collector current and 2 W power dissipation. The 2SD2015 has significantly higher DC current gain (2000 vs. 10) and faster transition frequency (40 MHz vs. 3 MHz). The MJF31CG offers a wider operating temperature range (-65°C to 150°C). Selection depends on whether the application requires higher current/power handling (2SD2015) or operates within lower current/power constraints (MJF31CG).
Q: Are both substitute parts RoHS compliant?
A: Yes. The 2SD2015 is RoHS Compliant, and the MJF31CG is ROHS3 Compliant. Both meet modern environmental and regulatory requirements. The 2SD1407A-Y(F) RoHS status is not specified in the available data.
Q: Can the MJF31CG be used in high-power applications?
A: No. The MJF31CG is rated for a maximum of 2 W power dissipation, significantly lower than the 2SD1407A-Y(F) (30 W) and 2SD2015 (25 W). It is suitable only for low-power signal switching and control applications. High-power applications require the 2SD2015 or equivalent higher-rated devices.
Q: What is the significance of the Darlington configuration in the 2SD2015?
A: The Darlington configuration in the 2SD2015 provides extremely high DC current gain (2000 minimum), allowing base current control with minimal input current. This characteristic is advantageous in applications requiring high current amplification from low-level control signals. However, the Darlington configuration exhibits higher saturation voltage (1.5 V) compared to the standard NPN 2SD1407A-Y(F) (2 V), which may affect low-voltage switching applications.
Q: Are the pin configurations identical between all three parts?
A: All three parts use the TO-220-3 through-hole package with identical pin configuration and lead spacing. Mechanical substitution is straightforward without PCB modifications.
Q: Which substitute part is recommended for new designs?
A: Both 2SD2015 and MJF31CG are active products with current manufacturer support. The 2SD2015 is recommended for applications requiring higher current and power handling with modern compliance certifications. The MJF31CG is suitable for lower-power applications where its specifications align with design requirements.
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