2SD1267AP Equivalent & Substitute Parts

Part Overview

The 2SD1267AP is an NPN bipolar junction transistor manufactured by Panasonic Electronic Components, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current. This device is packaged in TO-220-3 through-hole configuration and is designed for 2 W power dissipation applications. The 2SD1267AP is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor while offering active product status and current availability.

Key Parameters

Parameter	2SD1267AP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80 V
Current - Collector (Ic) (Max)	4 A
Power - Max	2 W
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature (Max)	150°C (TJ)

Substitute Part Grouping Explanation

Substitute parts for the 2SD1267AP are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Transistor Type: NPN (all substitutes must be NPN configuration)
Voltage - Collector Emitter Breakdown: 80 V (all substitutes rated at 80 V)
Package / Case: TO-220-3 (all substitutes use identical through-hole package)
Mounting Type: Through Hole (mechanical compatibility requirement)
Maximum Operating Temperature: 150°C or higher (thermal compatibility)

Secondary Compatibility Factors:

Current - Collector (Ic) (Max): Substitutes must support minimum 4 A or higher
Power - Max: Substitutes must support minimum 2 W or higher

All identified substitute parts meet or exceed the primary matching criteria. Substitutes with higher current ratings (TIP41BG at 6 A, 2N6488G at 15 A) are electrically compatible for applications requiring the 2SD1267AP's 4 A specification, as they operate within the same voltage class and package form factor.

Parameter Comparison

Parameter	2SD1267AP	TIP29BG	TIP31BG	TIP41BG	2N6488G	D44H11
Manufacturer	Panasonic	onsemi	onsemi	onsemi	onsemi	Solid State Inc.
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	80 V	80 V	Not Specified
Current - Collector (Ic) (Max)	4 A	1 A	3 A	6 A	15 A	Not Specified
Power - Max	2 W	2 W	2 W	2 W	1.8 W	Not Specified
Frequency - Transition	20MHz	3MHz	3MHz	3MHz	5MHz	Not Specified
Operating Temperature (Max)	150°C	150°C	150°C	150°C	150°C	Not Specified
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

TIP41BG (onsemi) is the primary substitute for the 2SD1267AP. This part matches the 4 A collector current specification exactly, maintains 80 V voltage rating, and is rated for 2 W power dissipation. The TIP41BG is in active product status with ROHS3 compliance and REACH unaffected certification. Current inventory is 20,300 units.

TIP31BG (onsemi) is suitable for applications where collector current does not exceed 3 A. This part provides 80 V voltage rating and 2 W power dissipation. The TIP31BG is active with ROHS3 compliance and REACH unaffected status. Current inventory is 2,000 units.

2N6488G (onsemi) is applicable for high-current applications requiring up to 15 A collector current within the 80 V voltage class. This part is active with ROHS3 compliance and REACH unaffected certification. Current inventory is 7,283 units. Note that power dissipation is rated at 1.8 W, which is marginally lower than the 2SD1267AP specification.

TIP29BG (onsemi) is limited to 1 A collector current and is suitable only for low-current applications. This part maintains 80 V voltage rating and 2 W power dissipation. The TIP29BG is active with ROHS3 compliance and REACH unaffected status. Current inventory is 4,434 units.

D44H11 (Solid State Inc.) has incomplete electrical specifications in available documentation. This part is in active status with ROHS3 compliance. Use of this substitute requires verification against complete manufacturer datasheets due to missing parameter data.

Frequently Asked Questions (FAQ)

Q: Can TIP41BG directly replace 2SD1267AP in all applications?

A: TIP41BG is electrically compatible with 2SD1267AP for applications operating at or below 4 A collector current and 80 V collector-emitter voltage. Both parts are rated for 2 W power dissipation and use identical TO-220-3 through-hole packaging. Mechanical mounting is identical. Verify circuit design does not depend on the higher transition frequency of the 2SD1267AP (20MHz versus 3MHz for TIP41BG).

Q: What is the difference between TIP41BG and 2N6488G?

A: Both parts are 80 V NPN transistors in TO-220-3 packages. TIP41BG is rated for 6 A maximum collector current with 2 W power dissipation. 2N6488G is rated for 15 A maximum collector current with 1.8 W power dissipation. For applications requiring exactly 4 A, TIP41BG is the closer match. For applications requiring higher current capability, 2N6488G is suitable provided power dissipation does not exceed 1.8 W.

Q: Is TIP29BG suitable as a substitute?

A: TIP29BG is suitable only for applications where collector current does not exceed 1 A. The 2SD1267AP is rated for 4 A maximum collector current. TIP29BG cannot be used as a direct substitute in circuits designed for 4 A operation.

Q: What are the compliance differences between substitute parts?

A: All active substitute parts (TIP41BG, TIP31BG, 2N6488G, TIP29BG) are ROHS3 compliant and REACH unaffected. The original 2SD1267AP is obsolete and compliance status is not specified. All substitutes meet current environmental and regulatory requirements for new designs.

Q: Can I use a higher-current-rated part in place of the 2SD1267AP?

A: Yes. Parts rated for higher collector current (TIP41BG at 6 A, 2N6488G at 15 A) are electrically compatible with the 2SD1267AP in circuits designed for 4 A operation. The higher current rating does not affect circuit operation at lower current levels. Verify that power dissipation remains within device limits.

Q: What is the impact of different transition frequencies?

A: The 2SD1267AP has a transition frequency of 20MHz, while most substitutes are rated at 3MHz to 5MHz. For DC and low-frequency applications, this difference is not significant. For circuits operating at frequencies approaching or exceeding 10MHz, verify that the lower transition frequency of substitute parts does not degrade circuit performance.

Q: Are all substitutes available in the same packaging?

A: Yes. All substitute parts use TO-220-3 through-hole packaging, identical to the 2SD1267AP. Mechanical compatibility with existing PCB layouts and heat sink mounting is maintained across all substitutes.

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