Equivalent & Substitute Parts for 2SCR544PFRAT100

Part Overview

The Rohm Semiconductor 2SCR544PFRAT100 is an NPN bipolar junction transistor (BJT), specifically designed for surface mount applications. It is characterized by an 80 V collector-emitter breakdown voltage, 2.5 A maximum collector current, 500 mW maximum power dissipation, and 280 MHz transition frequency. The device is automotive grade and AEC-Q101 qualified. Identifying equivalent or substitute parts is necessary for inventory assurance, supply chain flexibility, and to maintain continuity in manufacturing when facing allocation or packaging constraints.

Substiute Parts

2SCR544PFRAT100
Rohm SemiconductorIn Stock: 10972SCR544PFRAT100 Datasheet
2SCR544PFRAT100
Current Part
2SCR544PHZGT100
Rohm SemiconductorIn Stock: 27862SCR544PHZGT100 Datasheet
2SCR544PHZGT100
Similar
2SCR544P5T100
Rohm SemiconductorIn Stock: 1244342SCR544P5T100 Datasheet
2SCR544P5T100
Parametric Equivalent

Key Parameters

Parameter Value
Manufacturer Rohm Semiconductor
Part Number 2SCR544PFRAT100
Category Transistors, Bipolar (BJT)
Transistor Type NPN
Current - Collector (Ic) (Max) 2.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 3V
Power - Max 500 mW
Frequency - Transition 280MHz
Operating Temperature 150°C (TJ)
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package MPT3
RoHS Status ROHS3 Compliant
MSL 1 (Unlimited)
REACH Status REACH Unaffected
Product Status Active

Substitute Part Grouping Explanation

Substitution for the 2SCR544PFRAT100 is governed strictly by the following parameters: transistor type (NPN), maximum collector current, maximum collector-emitter breakdown voltage, maximum Vce saturation, collector cutoff current, minimum DC current gain, maximum power rating, transition frequency, operating temperature, mounting type, package, qualification, RoHS/REACH compliance, and moisture sensitivity level. Only parts matching or closely aligned with these values are considered suitable substitutes within the same product category.

Parameter Comparison

Parameter Main Part:
2SCR544PFRAT100
Parametric Equivalent:
2SCR544P5T100
Similar Part:
2SCR544PHZGT100
Manufacturer Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 2.5 A 2.5 A 2 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 30 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A 300mV @ 50mA, 1A 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 3V 120 @ 100mA, 3V 120 @ 100mA, 3V
Power - Max 500 mW 500 mW 500 mW
Frequency - Transition 280MHz 280MHz 320MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Qualification AEC-Q101 - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Supplier Device Package MPT3 MPT3 SOT-89
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

All listed substitute parts are active status, ROHS3 compliant, and REACH unaffected, with MSL 1 (unlimited), allowing for drop-in replacement in assembly from a compliance and inventory perspective. Only the 2SCR544PFRAT100 explicitly states AEC-Q101 automotive qualification; this should be considered if automotive certification is required.

Frequently Asked Questions (FAQ)

Q1: Which parameters are essential when selecting a substitute for the 2SCR544PFRAT100?
A1: Critical parameters include transistor type (NPN), maximum collector current, maximum collector-emitter breakdown voltage, Vce saturation, collector cutoff current, DC current gain, maximum power, transition frequency, mounting type, package/case, RoHS and REACH status, and moisture sensitivity.

Q2: How important is the voltage rating when evaluating substitutes in the Transistors, Bipolar (BJT) category?
A2: The maximum collector-emitter breakdown voltage must meet or exceed the application requirement; substituting a transistor with a lower voltage capability is not suitable if the application voltage exceeds the substitute's specification.

Q3: Do package and mounting differences affect substitution?
A3: Yes. The mounting type and physical package must match or be compatible with the application PCB footprint to ensure mechanical and electrical fit.

Q4: Are all listed equivalents AEC-Q101 qualified?
A4: Only the 2SCR544PFRAT100 explicitly indicates AEC-Q101 qualification. If automotive qualification is required, confirm the substitute’s grade before selection.

Q5: Is compliance with RoHS and REACH uniform across substitutes?
A5: All listed substitutes state ROHS3 compliant and REACH unaffected status, supporting global regulatory conformance for electronic assemblies.

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