Equivalent & Substitute Parts for 2SCR372P5T100Q

Part Overview

The 2SCR372P5T100Q from Rohm Semiconductor is an active NPN bipolar junction transistor (BJT), designed primarily for general-purpose amplification and switching in surface mount applications. It features a collector-emitter breakdown voltage of 120 V, collector current up to 700 mA, a transition frequency of 220 MHz, and power dissipation up to 500 mW. Its packaging format is MPT3 (TO-243AA), and it is compliant with ROHS3 and REACH standards. Alternative models are necessary when design flexibility, supply continuity, or equivalent electrical and mechanical characteristics are required for system compatibility or manufacturing requirements.

Substiute Parts

2SCR372P5T100Q
Rohm SemiconductorIn Stock: 103242SCR372P5T100Q Datasheet
2SCR372P5T100Q
Current Part
2SCR372P5T100R
Rohm SemiconductorIn Stock: 34552SCR372P5T100R Datasheet
2SCR372P5T100R
Parametric Equivalent
2SCR372PHZGT100Q
Rohm SemiconductorIn Stock: 15272SCR372PHZGT100Q Datasheet
2SCR372PHZGT100Q
Parametric Equivalent

Key Parameters

Parameter Value
Manufacturer Part Number 2SCR372P5T100Q
Category Transistors, Bipolar (BJT)
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 120 V
Current - Collector (Ic) (Max) 700 mA
Power - Max 500 mW
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Frequency - Transition 220MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package MPT3
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
Product Status Active

Substitute Part Grouping Explanation

Substitute selection for the 2SCR372P5T100Q is strictly based on key parameters including transistor type (NPN), voltage and current ratings, power dissipation, DC current gain, frequency characteristics, cutoff current, saturation voltage, package type, compliance certifications, and product status. The substitute parts listed are functionally equivalent in all provided electrical and compliance specifications, ensuring integration without deviation from supplied characteristics. Package or device outline differences are according to information explicitly provided in the input parameters.

Key parameters for substitution:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max)
  • Current - Collector (Ic) (Max)
  • Power - Max
  • Vce Saturation (Max) @ Ib, Ic
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • Frequency - Transition
  • Operating Temperature
  • Mounting Type
  • Package / Case / Supplier Device Package
  • RoHS and REACH compliance
  • Product Status

Parameter Comparison

Parameter 2SCR372P5T100Q 2SCR372P5T100R 2SCR372PHZGT100Q
Manufacturer Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Category Transistors, Bipolar (BJT) Transistors, Bipolar (BJT) Transistors, Bipolar (BJT)
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 120 V 120 V 120 V
Current - Collector (Ic) (Max) 700 mA 700 mA 700 mA
Power - Max 500 mW 500 mW 500 mW
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA 300mV @ 50mA, 500mA 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V 120 @ 100mA, 5V 120 @ 100mA, 5V
Frequency - Transition 220MHz 220MHz 220MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Supplier Device Package MPT3 MPT3 SOT-89
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

Selections are based on product status (Active), RoHS3 compliance, and REACH unaffected status. All listed substitutes, including 2SCR372P5T100R and 2SCR372PHZGT100Q, meet the same compliance and regulatory certifications as the main part number and are marked as active in their respective product statuses.

Frequently Asked Questions (FAQ)

Q1: What are the critical criteria for selecting a substitute for 2SCR372P5T100Q in bipolar BJT transistor applications?
A1: Substitute selection requires strict alignment of transistor type, maximum voltage and current ratings, power dissipation, transition frequency, DC current gain, mounting type, package/case, RoHS and REACH compliance, and product status.

Q2: Do all substitute parts share the same electrical characteristics as the 2SCR372P5T100Q?
A2: All substitute parts listed share identical electrical parameters as provided in the input, including voltage, current, power, gain, and frequency specifications.

Q3: Are package and supplier device package options identical for all listed substitutes?
A3: The main part 2SCR372P5T100Q and 2SCR372P5T100R use the MPT3 (TO-243AA) package. The 2SCR372PHZGT100Q lists SOT-89 as the supplier device package but also references TO-243AA as the package/case.

Q4: Are RoHS and REACH compliance statuses consistent among substitute parts?
A4: All substitute parts are ROHS3 compliant and REACH unaffected, matching the main part compliance status.

Q5: Can substitute parts be used interchangeably based solely on electrical and mechanical parameters?
A5: Based on the provided common electrical and mechanical parameters, the listed substitute parts are parametric equivalents and meet the same criteria as the main part.

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