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Equivalent & Substitute Parts for 2SCR372P5T100Q
Part Overview
The 2SCR372P5T100Q from Rohm Semiconductor is an active NPN bipolar junction transistor (BJT), designed primarily for general-purpose amplification and switching in surface mount applications. It features a collector-emitter breakdown voltage of 120 V, collector current up to 700 mA, a transition frequency of 220 MHz, and power dissipation up to 500 mW. Its packaging format is MPT3 (TO-243AA), and it is compliant with ROHS3 and REACH standards. Alternative models are necessary when design flexibility, supply continuity, or equivalent electrical and mechanical characteristics are required for system compatibility or manufacturing requirements.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | 2SCR372P5T100Q |
| Category | Transistors, Bipolar (BJT) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Current - Collector (Ic) (Max) | 700 mA |
| Power - Max | 500 mW |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Frequency - Transition | 220MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | MPT3 |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitute selection for the 2SCR372P5T100Q is strictly based on key parameters including transistor type (NPN), voltage and current ratings, power dissipation, DC current gain, frequency characteristics, cutoff current, saturation voltage, package type, compliance certifications, and product status. The substitute parts listed are functionally equivalent in all provided electrical and compliance specifications, ensuring integration without deviation from supplied characteristics. Package or device outline differences are according to information explicitly provided in the input parameters.
Key parameters for substitution:
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max)
- Current - Collector (Ic) (Max)
- Power - Max
- Vce Saturation (Max) @ Ib, Ic
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Operating Temperature
- Mounting Type
- Package / Case / Supplier Device Package
- RoHS and REACH compliance
- Product Status
Parameter Comparison
| Parameter | 2SCR372P5T100Q | 2SCR372P5T100R | 2SCR372PHZGT100Q |
|---|---|---|---|
| Manufacturer | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Category | Transistors, Bipolar (BJT) | Transistors, Bipolar (BJT) | Transistors, Bipolar (BJT) |
| Transistor Type | NPN | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 120 V | 120 V | 120 V |
| Current - Collector (Ic) (Max) | 700 mA | 700 mA | 700 mA |
| Power - Max | 500 mW | 500 mW | 500 mW |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA | 300mV @ 50mA, 500mA | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) | 1µA (ICBO) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V | 120 @ 100mA, 5V | 120 @ 100mA, 5V |
| Frequency - Transition | 220MHz | 220MHz | 220MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-243AA | TO-243AA | TO-243AA |
| Supplier Device Package | MPT3 | MPT3 | SOT-89 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
Selections are based on product status (Active), RoHS3 compliance, and REACH unaffected status. All listed substitutes, including 2SCR372P5T100R and 2SCR372PHZGT100Q, meet the same compliance and regulatory certifications as the main part number and are marked as active in their respective product statuses.
Frequently Asked Questions (FAQ)
Q1: What are the critical criteria for selecting a substitute for 2SCR372P5T100Q in bipolar BJT transistor applications?
A1: Substitute selection requires strict alignment of transistor type, maximum voltage and current ratings, power dissipation, transition frequency, DC current gain, mounting type, package/case, RoHS and REACH compliance, and product status.
Q2: Do all substitute parts share the same electrical characteristics as the 2SCR372P5T100Q?
A2: All substitute parts listed share identical electrical parameters as provided in the input, including voltage, current, power, gain, and frequency specifications.
Q3: Are package and supplier device package options identical for all listed substitutes?
A3: The main part 2SCR372P5T100Q and 2SCR372P5T100R use the MPT3 (TO-243AA) package. The 2SCR372PHZGT100Q lists SOT-89 as the supplier device package but also references TO-243AA as the package/case.
Q4: Are RoHS and REACH compliance statuses consistent among substitute parts?
A4: All substitute parts are ROHS3 compliant and REACH unaffected, matching the main part compliance status.
Q5: Can substitute parts be used interchangeably based solely on electrical and mechanical parameters?
A5: Based on the provided common electrical and mechanical parameters, the listed substitute parts are parametric equivalents and meet the same criteria as the main part.
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