2SC6099-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC6099-TL-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. This device is designed for surface mount applications in the TO-252-3 (DPAK) package and operates at frequencies up to 300 MHz with a maximum power dissipation of 800 mW.

The 2SC6099-TL-E carries a product status designation of "Not For New Designs," indicating that onsemi has discontinued active development and recommendation of this part for new circuit implementations. Identification of equivalent and substitute parts is necessary to support existing designs, maintenance applications, and legacy system requirements where this transistor is currently deployed.

Substiute Parts

2SC6099-TL-E

onsemiIn Stock: 26132SC6099-TL-E Datasheet

Current PartRFQ

2SD1980TL

Rohm SemiconductorIn Stock: 40952SD1980TL Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC6099-TL-E is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Maximum collector current (Ic): 2 A minimum
• Collector-emitter breakdown voltage (VCEO): 100 V minimum
• Package type: TO-252-3 (DPAK) surface mount configuration
• Operating temperature range: 150°C maximum junction temperature
• RoHS3 compliance and MSL Level 1 rating

Functional Considerations: The 2SC6099-TL-E is a standard NPN transistor with moderate frequency response (300 MHz) and moderate power dissipation (800 mW). Substitute parts must maintain these electrical specifications to ensure functional equivalence in existing circuit designs.

The identified substitute part, 2SD1980TL, meets the mandatory electrical parameters (2 A collector current, 100 V breakdown voltage) and shares the identical package configuration (TO-252-3 DPAK). Both parts are RoHS3 compliant with MSL Level 1 rating, ensuring environmental and regulatory compatibility.

Parameter Comparison

Engineering Selection Recommendations

2SD1980TL as Substitute for 2SC6099-TL-E:

The 2SD1980TL meets the mandatory electrical specifications for substitution: identical maximum collector current (2 A), identical collector-emitter breakdown voltage (100 V), and identical package configuration (TO-252-3 DPAK). Both parts are RoHS3 compliant with MSL Level 1 rating, ensuring regulatory and environmental compatibility.

The 2SD1980TL is a Darlington-type NPN transistor, which results in higher DC current gain (1000 vs. 300) and elevated saturation voltage (1.5 V vs. 165 mV). These differences reflect the internal Darlington configuration and do not prevent functional substitution in applications where the 2SC6099-TL-E is currently deployed, provided circuit design accommodates the higher saturation voltage characteristic.

Both parts carry "Not For New Designs" product status, indicating neither manufacturer actively recommends these devices for new circuit development. Selection between these parts for legacy system support should be based on component availability and existing circuit performance requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1980TL directly replace the 2SC6099-TL-E in existing circuits?

A: The 2SD1980TL meets the mandatory electrical parameters (2 A collector current, 100 V breakdown voltage) and shares the identical TO-252-3 DPAK package. However, the 2SD1980TL is a Darlington transistor with higher saturation voltage (1.5 V vs. 165 mV). Circuits sensitive to saturation voltage characteristics may require design adjustment. Pin configuration is identical, enabling direct physical substitution.

Q: What is the primary difference between these two transistors?

A: The 2SC6099-TL-E is a standard NPN transistor with moderate current gain (300) and low saturation voltage (165 mV). The 2SD1980TL is a Darlington-type NPN transistor with higher current gain (1000) and higher saturation voltage (1.5 V). Both devices share identical maximum ratings for collector current and breakdown voltage.

Q: Are both parts suitable for new designs?

A: Both the 2SC6099-TL-E and 2SD1980TL carry "Not For New Designs" product status. Neither manufacturer recommends these devices for new circuit implementations. These parts are identified for legacy system support and existing design maintenance only.

Q: Do the packaging and mounting specifications match?

A: Yes. Both transistors use the TO-252-3 (DPAK) surface mount package with identical pin configuration. Both are RoHS3 compliant with MSL Level 1 rating, ensuring compatibility with standard surface mount assembly processes and environmental requirements.

Q: What is the significance of the Darlington configuration in the 2SD1980TL?

A: The Darlington configuration in the 2SD1980TL provides higher current gain, reducing base drive requirements. This results in higher saturation voltage compared to the standard NPN 2SC6099-TL-E. Circuit designs relying on low saturation voltage for switching applications may require adjustment when substituting the 2SD1980TL.

Q: Are there compliance or regulatory differences between these parts?

A: Both parts are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Both carry MSL Level 1 rating. No compliance or regulatory differences exist between the two devices.