2SC6098-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC6098-TL-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 2.5 A maximum collector current. This device is designed for surface mount applications in the TO-252-3 (DPAK) package and operates at a maximum junction temperature of 150°C with a transition frequency of 350 MHz.

The 2SC6098-TL-E is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing production requirements, maintenance operations, and design continuity where this transistor was originally specified.

Substiute Parts

2SC6098-TL-E

onsemiIn Stock: 32462SC6098-TL-E Datasheet

Current PartRFQ

2SC4135T-TL-E

onsemiIn Stock: 14952SC4135T-TL-E Datasheet

MFR RecommendedRFQ

2SCR574DGTL

Rohm SemiconductorIn Stock: 21812SCR574DGTL Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2SC6098-TL-E are identified based on electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

• Transistor type: NPN
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting type: Surface Mount
• Operating temperature range: 150°C (TJ) maximum
• Voltage rating: Equal to or greater than 80 V
• Current rating: Equal to or greater than 2.5 A (or acceptable for the application if lower)
• Power dissipation: Equal to or greater than 800 mW (or acceptable for the application if lower)

Substitute Classification:

MFR Recommended Substitute: The 2SC4135T-TL-E is designated as the manufacturer-recommended substitute. This part is manufactured by onsemi and maintains the same package and mounting specifications as the original device.

Similar Substitute: The 2SCR574DGTL is a Rohm Semiconductor alternative that meets the core electrical and mechanical requirements. This part is classified as a similar substitute due to different manufacturer origin and package designation (CPT3 vs. TP-FA).

Parameter Comparison

Engineering Selection Recommendations

2SC4135T-TL-E (MFR Recommended Substitute)

The 2SC4135T-TL-E is the manufacturer-recommended substitute for the obsolete 2SC6098-TL-E. Both devices are manufactured by onsemi and share identical package specifications (TO-252-3, DPAK). The 2SC4135T-TL-E is classified as active product status, ensuring ongoing availability and supply chain support.

The 2SC4135T-TL-E exhibits the following electrical differences from the original device:

• Collector-emitter breakdown voltage is rated at 100 V (versus 80 V), providing higher voltage margin
• Maximum collector current is 2 A (versus 2.5 A), representing a 20% reduction in current capacity
• Maximum power dissipation is 1 W (versus 800 mW), providing additional thermal headroom
• Transition frequency is 120 MHz (versus 350 MHz), indicating lower high-frequency performance
• DC current gain (hFE) is 200 minimum (versus 300 minimum)
• Vce saturation is 400 mV (versus 165 mV) at specified test conditions

Both devices maintain ROHS3 compliance, MSL Level 1, and REACH unaffected status. The 2SC4135T-TL-E is supplied in Tape & Reel packaging with current inventory availability.

2SCR574DGTL (Similar Substitute)

The 2SCR574DGTL is manufactured by Rohm Semiconductor and provides an alternative substitute option. This device maintains the same package form factor (TO-252-3, DPAK) and surface mount mounting type as the original 2SC6098-TL-E.

The 2SCR574DGTL exhibits the following electrical characteristics:

• Collector-emitter breakdown voltage is rated at 80 V (matching the original device)
• Maximum collector current is 2 A (versus 2.5 A)
• Maximum power dissipation is 10 W (significantly higher than the original 800 mW)
• Transition frequency is 280 MHz (versus 350 MHz)
• DC current gain (hFE) is 120 minimum (versus 300 minimum)
• Vce saturation is 300 mV (versus 165 mV) at specified test conditions

The 2SCR574DGTL is classified as active product status with current inventory. This device maintains ROHS3 compliance, MSL Level 1, and REACH unaffected status. The supplier device package designation is CPT3 (versus TP-FA for the original device).

Selection Basis

Selection between the 2SC4135T-TL-E and 2SCR574DGTL depends on application-specific requirements regarding current capacity, frequency response, and thermal dissipation. Both substitutes are active products with established supply chains and full regulatory compliance. The choice between manufacturer-recommended and similar substitutes should be based on circuit performance requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the 2SC4135T-TL-E directly replace the 2SC6098-TL-E in all applications?

A: The 2SC4135T-TL-E shares the same package and mounting specifications as the 2SC6098-TL-E. However, electrical parameter differences exist. The 2SC4135T-TL-E has lower maximum collector current (2 A versus 2.5 A), lower transition frequency (120 MHz versus 350 MHz), and higher Vce saturation (400 mV versus 165 mV). Applications requiring the full 2.5 A current capacity or 350 MHz frequency response may require circuit redesign or selection of an alternative substitute.

Q: What are the key electrical differences between the 2SC6098-TL-E and 2SCR574DGTL?

A: Both devices share the same 80 V collector-emitter breakdown voltage and TO-252-3 package. The 2SCR574DGTL has lower maximum collector current (2 A versus 2.5 A), lower transition frequency (280 MHz versus 350 MHz), and significantly higher power dissipation capability (10 W versus 800 mW). The 2SCR574DGTL also has lower DC current gain (120 minimum versus 300 minimum).

Q: Are all three devices compatible with the same PCB footprint?

A: Yes. The 2SC6098-TL-E, 2SC4135T-TL-E, and 2SCR574DGTL all use the TO-252-3 (DPAK) package with identical lead spacing and dimensions. PCB footprints designed for the original 2SC6098-TL-E are mechanically compatible with both substitute devices.

Q: What is the difference between the TP-FA and CPT3 package designations?

A: TP-FA and CPT3 are supplier device package designations used by onsemi and Rohm Semiconductor respectively. Both designations refer to the same industry-standard TO-252-3 (DPAK) package form factor. The different designations reflect manufacturer-specific internal classification systems and do not affect mechanical or electrical compatibility.

Q: Why is the 2SC4135T-TL-E classified as the manufacturer-recommended substitute?

A: The 2SC4135T-TL-E is designated as the manufacturer-recommended substitute because it is produced by onsemi, the original manufacturer of the 2SC6098-TL-E. This designation indicates that onsemi has evaluated and approved this device as the direct replacement option within their product portfolio.

Q: Are there compliance or regulatory differences between the substitute parts?

A: No. All three devices (2SC6098-TL-E, 2SC4135T-TL-E, and 2SCR574DGTL) maintain identical compliance status: ROHS3 compliant, MSL Level 1 (Unlimited), REACH unaffected, and ECCN EAR99 classification. Regulatory and environmental compliance requirements do not differentiate these devices.

Q: What should be considered when selecting between the MFR recommended and similar substitutes?

A: Selection should be based on application-specific electrical requirements. The 2SC4135T-TL-E (MFR recommended) offers higher voltage rating (100 V) and better power dissipation (1 W). The 2SCR574DGTL (similar) maintains the original 80 V voltage rating and offers significantly higher power dissipation (10 W). Applications with high thermal loads may benefit from the 2SCR574DGTL, while applications requiring higher voltage margin may favor the 2SC4135T-TL-E.

Q: Is the reduced current capacity of the substitutes a limiting factor?

A: The 2SC4135T-TL-E and 2SCR574DGTL both have maximum collector current ratings of 2 A, compared to 2.5 A for the original 2SC6098-TL-E. This represents a 20% reduction in current capacity. Applications operating at or near the 2.5 A limit require evaluation to determine if 2 A capacity is sufficient for the intended function.