2SC6096-TD-H Equivalent & Substitute Parts

Part Overview

The 2SC6096-TD-H is an NPN bipolar junction transistor manufactured by onsemi, rated for 100V collector-emitter breakdown voltage and 2A maximum collector current. This surface mount device operates at frequencies up to 300MHz with a maximum power dissipation of 1.3W and is housed in a TO-243AA package. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100 V
Current - Collector (Ic) (Max)	2 A
Power - Max	1.3 W
Frequency - Transition	300 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 100mA, 1A
Current - Collector Cutoff (Max)	1µA (ICBO)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SC6096-TD-H is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 100 V minimum
Current - Collector (Ic) (Max): 2 A minimum
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Secondary Compatibility Factors:

Power dissipation capability
Frequency response characteristics
DC current gain (hFE)
Saturation voltage characteristics
Package form factor

Substitute parts are grouped into two categories:

Category 1 - Direct Parametric Equivalents: Parts with identical or superior electrical ratings and compatible packaging that maintain full functional equivalence.

Category 2 - Functional Alternatives: Parts with enhanced current handling or frequency capabilities that exceed the original specifications while maintaining voltage and basic performance requirements.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max)	Vce Breakdown (Max)	Power (Max)	Frequency (Transition)	hFE (Min)	Package	Product Status
2SC6096-TD-H	onsemi	NPN	2 A	100 V	1.3 W	300 MHz	300 @ 100mA, 5V	TO-243AA (PCP)	Obsolete
2SC6096-TD-E	onsemi	NPN	2 A	100 V	1.3 W	300 MHz	300 @ 100mA, 5V	TO-243AA (PCP)	Active
FZT653TA	Diodes Incorporated	NPN	2 A	100 V	2 W	175 MHz	100 @ 500mA, 2V	TO-261-4, TO-261AA (SOT-223-3)	Active
FZT653TC	Diodes Incorporated	NPN	2 A	100 V	2 W	175 MHz	100 @ 500mA, 2V	TO-261-4, TO-261AA (SOT-223-3)	Active
ZXTN25100DZTA	Diodes Incorporated	NPN	2.5 A	100 V	2.4 W	175 MHz	300 @ 10mA, 2V	TO-243AA (SOT-89-3)	Active
ZXTN2011ZTA	Diodes Incorporated	NPN	4.5 A	100 V	2.1 W	130 MHz	100 @ 2A, 2V	TO-243AA (SOT-89-3)	Active
ZXTN19100CZTA	Diodes Incorporated	NPN	5.25 A	100 V	2.4 W	150 MHz	200 @ 100mA, 2V	TO-243AA (SOT-89-3)	Active

Engineering Selection Recommendations

Direct Replacement (Recommended for Immediate Substitution):

The 2SC6096-TD-E is the primary substitute for the obsolete 2SC6096-TD-H. Both parts are manufactured by onsemi and share identical electrical specifications: 2A maximum collector current, 100V breakdown voltage, 1.3W power dissipation, and 300MHz transition frequency. The 2SC6096-TD-E is currently in active production status with higher inventory availability (3415 pcs vs. 2676 pcs). Both parts are ROHS3 compliant and carry identical compliance certifications. The only difference is packaging format: the -TD-H uses standard packaging while the -TD-E is supplied in Cut Tape and Digi-Reel formats.

Alternative Substitutes (For Enhanced Performance Applications):

The ZXTN25100DZTA manufactured by Diodes Incorporated provides a functional alternative with superior specifications. It maintains the 2A minimum collector current requirement and 100V breakdown voltage while offering increased power dissipation (2.4W vs. 1.3W) and improved current gain characteristics. This part is housed in a TO-243AA package compatible with the original footprint. The ZXTN25100DZTA is actively produced with substantial inventory (19400 pcs).

The FZT653TA and FZT653TC from Diodes Incorporated are functionally equivalent alternatives with 2A collector current and 100V breakdown voltage. These parts feature enhanced power handling (2W) but operate at reduced transition frequency (175MHz vs. 300MHz). Both are housed in SOT-223-3 packages, requiring PCB layout modifications. Both parts are actively produced with high inventory levels.

The ZXTN2011ZTA and ZXTN19100CZTA are suitable for applications requiring higher current capacity (4.5A and 5.25A respectively) while maintaining 100V voltage ratings. These parts are housed in TO-243AA packages and are actively produced.

All substitute parts listed are ROHS3 compliant with MSL rating of 1 (Unlimited) and carry REACH Unaffected status, matching the compliance profile of the original part.

Frequently Asked Questions (FAQ)

Q: Can the 2SC6096-TD-E directly replace the 2SC6096-TD-H without circuit modifications?

A: Yes. The 2SC6096-TD-E is a direct parametric equivalent with identical electrical specifications. Both parts share the same base product number (2SC6096), voltage rating (100V), current rating (2A), power dissipation (1.3W), and transition frequency (300MHz). The only difference is the packaging format (Cut Tape & Digi-Reel vs. standard). No circuit modifications are required.

Q: What are the key differences between the onsemi 2SC6096-TD-E and the Diodes Incorporated FZT653TA?

A: Both parts meet the 2A collector current and 100V voltage requirements. The primary differences are: (1) Transition frequency: FZT653TA operates at 175MHz compared to 300MHz for the 2SC6096-TD-E; (2) Power dissipation: FZT653TA rated at 2W vs. 1.3W; (3) Package: FZT653TA uses SOT-223-3 (TO-261-4) requiring different PCB footprint; (4) DC current gain: FZT653TA has lower hFE (100 @ 500mA, 2V vs. 300 @ 100mA, 5V). The FZT653TA is suitable for lower-frequency applications where the reduced transition frequency is acceptable.

Q: Are the ZXTN25100DZTA, ZXTN2011ZTA, and ZXTN19100CZTA suitable substitutes for the 2SC6096-TD-H?

A: These parts are functional alternatives that exceed the original specifications. All three maintain the 100V breakdown voltage requirement. The ZXTN25100DZTA matches the 2A collector current minimum and is the closest alternative. The ZXTN2011ZTA and ZXTN19100CZTA provide higher current capacity (4.5A and 5.25A respectively) for applications requiring enhanced current handling. All three use TO-243AA packages compatible with the original footprint. These parts are suitable when enhanced performance characteristics are beneficial to the application.

Q: What packaging considerations apply when substituting with FZT653TA or FZT653TC?

A: The FZT653TA and FZT653TC use SOT-223-3 packages (TO-261-4, TO-261AA) which differ from the original TO-243AA package. PCB layout modifications are required, including changes to pad dimensions, spacing, and trace routing. The SOT-223-3 package has a different pin configuration and footprint. Design validation and PCB re-layout are necessary before implementation.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (2SC6096-TD-E, FZT653TA, FZT653TC, ZXTN25100DZTA, ZXTN2011ZTA, and ZXTN19100CZTA) are ROHS3 compliant with MSL rating of 1 (Unlimited) and REACH Unaffected status, matching the compliance profile of the original 2SC6096-TD-H.

Q: Which substitute part has the highest inventory availability?

A: The FZT653TC has the highest inventory among active substitutes with 19033 pcs in stock, followed by ZXTN2011ZTA with 43400 pcs. The 2SC6096-TD-E has 3415 pcs available. Inventory levels should be verified with suppliers for current availability.

Q: What is the operating temperature range for substitute parts?

A: The original 2SC6096-TD-H specifies a maximum junction temperature of 150°C. The 2SC6096-TD-E maintains this specification. The Diodes Incorporated alternatives (FZT653TA, FZT653TC, ZXTN25100DZTA, ZXTN2011ZTA, ZXTN19100CZTA) all specify an operating temperature range of -55°C to 150°C, providing extended low-temperature capability.

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