2SC6040(TPF2,Q,M) Equivalent & Substitute Parts

Part Overview

The 2SC6040(TPF2,Q,M) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, rated for 800 V collector-emitter breakdown voltage and 1 A maximum collector current. This device is packaged in SC-71 through-hole configuration and is rated for 1 W maximum power dissipation. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Substiute Parts

2SC6040(TPF2,Q,M)

Toshiba Semiconductor and StorageIn Stock: 8812SC6040(TPF2,Q,M) Datasheet

Current PartRFQ

2SC6142(Q)

Toshiba Semiconductor and StorageIn Stock: 8872SC6142(Q) Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC6040(TPF2,Q,M) is determined by the following critical electrical and mechanical parameters:

Substitution Criteria:

• Transistor polarity must be NPN
• Collector-emitter breakdown voltage must equal or exceed 800 V
• Maximum collector current must equal or exceed 1 A
• Maximum power dissipation must equal or exceed 1 W
• Mounting type must be through-hole
• Operating temperature rating must support 150°C junction temperature
• Vce saturation and DC current gain characteristics must be compatible with the application circuit

The 2SC6142(Q) is evaluated against these criteria to determine substitution feasibility.

Parameter Comparison

Engineering Selection Recommendations

The 2SC6142(Q) does not qualify as a direct equivalent substitute for the 2SC6040(TPF2,Q,M) based on the critical parameter of collector-emitter breakdown voltage. The 2SC6040(TPF2,Q,M) is rated for 800 V maximum breakdown voltage, while the 2SC6142(Q) is rated for 375 V maximum breakdown voltage. This represents a 53% reduction in voltage capability, which disqualifies the 2SC6142(Q) for applications requiring the full 800 V rating of the original part.

The 2SC6142(Q) is classified as an active product with current manufacturing support, whereas the 2SC6040(TPF2,Q,M) is obsolete. However, substitution cannot be recommended when the substitute part does not meet the minimum electrical specifications of the original design.

Applications requiring 800 V collector-emitter breakdown voltage must retain the 2SC6040(TPF2,Q,M) or identify alternative NPN transistors with equivalent or superior voltage ratings, matching current and power specifications, and compatible through-hole packaging.

Frequently Asked Questions (FAQ)

Q: Can the 2SC6142(Q) replace the 2SC6040(TPF2,Q,M) in my circuit?

A: No. The 2SC6142(Q) has a maximum collector-emitter breakdown voltage of 375 V, which is insufficient for applications designed for the 2SC6040(TPF2,Q,M) rated at 800 V. Using a lower-voltage device in a high-voltage application creates risk of device failure and circuit malfunction.

Q: What does "obsolete" status mean for the 2SC6040(TPF2,Q,M)?

A: Obsolete status indicates that Toshiba Semiconductor and Storage has discontinued manufacturing of this part. Existing inventory may be available through authorized distributors, but long-term procurement cannot be guaranteed. Design migration to active alternatives is recommended for new production programs.

Q: Are the package types interchangeable between these parts?

A: No. The 2SC6040(TPF2,Q,M) uses SC-71 packaging, while the 2SC6142(Q) uses TO-251-3 Stub Leads (IPak) packaging. These packages have different pinout configurations and physical dimensions, requiring circuit board redesign for mechanical compatibility.

Q: What parameters must match for a valid substitute?

A: For NPN transistor substitution, the substitute part must meet or exceed the original part's collector-emitter breakdown voltage, collector current rating, and power dissipation. The substitute must also maintain compatible saturation voltage and current gain characteristics for the intended application circuit. Mounting type and package compatibility must be verified for mechanical fit.

Q: Why does the 2SC6142(Q) have higher current gain than the 2SC6040(TPF2,Q,M)?

A: The 2SC6142(Q) is designed for lower voltage applications (375 V versus 800 V), which allows for different internal semiconductor geometry and doping profiles. Lower voltage devices typically exhibit higher current gain characteristics. This difference reflects different design optimization for their respective voltage classes.

Q: Is the 2SC6040(TPF2,Q,M) still available for purchase?

A: Current inventory of 856 pieces is available as new original stock through authorized distributors. However, as an obsolete part, future availability cannot be assured. Procurement planning should account for limited supply and potential price increases as inventory depletes.