2SC6040,T2Q(J Equivalent & Substitute Parts

Part Overview

The 2SC6040,T2Q(J is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for high-voltage switching applications. This component operates at a maximum collector-emitter breakdown voltage of 800 V with a maximum collector current of 1 A and a power dissipation rating of 1 W. The device is packaged in SC-71 through-hole configuration and is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and production requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	800	V
Current - Collector (Ic) (Max)	1	A
Power - Max	1	W
Vce Saturation (Max) @ Ib, Ic	1 V @ 100 mA, 800 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 100 mA, 5 V	—
Current - Collector Cutoff (Max)	100	µA
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	SC-71	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the 2SC6040,T2Q(J requires evaluation of electrical and mechanical compatibility based on the following criteria:

Primary Substitution Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must equal or exceed 800 V
Maximum collector current must equal or exceed 1 A
Power dissipation rating must equal or exceed 1 W
DC current gain (hFE) characteristics must support the intended application
Mounting type must be through-hole compatible
Operating temperature range must support 150°C junction temperature

Secondary Compatibility Factors:

Vce saturation characteristics at specified bias conditions
Collector cutoff current (ICBO) performance
Package footprint and lead configuration compatibility

The 2SC6142(Q) is evaluated as a potential substitute based on these parameters. However, critical differences exist in voltage rating and current handling that must be assessed for specific application requirements.

Parameter Comparison

Parameter	2SC6040,T2Q(J	2SC6142(Q)	Unit
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	800	375	V
Current - Collector (Ic) (Max)	1	1.5	A
Power - Max	1	1.1	W
Vce Saturation (Max) @ Ib, Ic	1 V @ 100 mA, 800 mA	900 mV @ 100 mA, 800 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 100 mA, 5 V	100 @ 100 mA, 5 V	—
Current - Collector Cutoff (Max)	100	50	µA
Operating Temperature (TJ)	150	150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	SC-71	TO-251-3 Stub Leads, IPak	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The 2SC6040,T2Q(J is classified as obsolete. The 2SC6142(Q) is an active product from the same manufacturer and shares fundamental NPN transistor architecture with compatible through-hole mounting and identical maximum operating temperature.

Voltage Rating Consideration: The 2SC6142(Q) features a maximum collector-emitter breakdown voltage of 375 V, which is 425 V lower than the 2SC6040,T2Q(J. This represents a significant reduction in voltage capability. Direct substitution is limited to applications where the circuit operates at or below 375 V collector-emitter voltage.

Current and Power Ratings: The 2SC6142(Q) provides superior current handling at 1.5 A maximum collector current compared to 1 A for the original part, with a marginally higher power dissipation rating of 1.1 W versus 1 W.

Gain Characteristics: The 2SC6142(Q) exhibits higher DC current gain (hFE minimum of 100 versus 60), which may affect biasing circuit design and switching speed characteristics.

Package Compatibility: The 2SC6142(Q) uses TO-251-3 stub leads (IPak) packaging, which differs from the SC-71 package of the original part. PCB layout modifications are required for physical substitution.

Compliance Status: Both components carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, indicating equivalent export and tariff treatment.

Frequently Asked Questions (FAQ)

Q: Can the 2SC6142(Q) directly replace the 2SC6040,T2Q(J in all applications?

A: No. The 2SC6142(Q) has a maximum collector-emitter breakdown voltage of 375 V, which is insufficient for applications requiring the full 800 V rating of the original part. Substitution is limited to circuits operating at 375 V or below.

Q: What are the key electrical differences between these parts?

A: The primary differences are collector-emitter breakdown voltage (800 V versus 375 V), maximum collector current (1 A versus 1.5 A), DC current gain (60 versus 100 minimum), and collector cutoff current (100 µA versus 50 µA). These differences affect circuit performance, biasing requirements, and switching characteristics.

Q: Are the packages compatible?

A: No. The 2SC6040,T2Q(J uses SC-71 packaging, while the 2SC6142(Q) uses TO-251-3 stub leads (IPak) packaging. Different PCB footprints and lead configurations require layout redesign for physical substitution.

Q: Why is the 2SC6040,T2Q(J obsolete?

A: The product status reflects Toshiba's discontinuation of this component. The 2SC6142(Q) represents an active alternative from the same manufacturer for applications within its electrical specifications.

Q: What should be verified before substituting the 2SC6142(Q)?

A: Circuit voltage requirements must not exceed 375 V collector-emitter voltage. Biasing networks may require adjustment due to higher DC current gain. PCB layout must accommodate the different package footprint. Thermal management and power dissipation calculations should be re-evaluated based on the 1.1 W rating.

Q: Are there export or compliance restrictions on either part?

A: Both components carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, indicating equivalent regulatory treatment for export and tariff purposes.

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