2SC6017-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC6017-TL-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 10 A maximum collector current. This device is packaged in a TO-252-3 DPAK surface mount configuration and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 950 mW.

The 2SC6017-TL-E is classified as obsolete. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades.

Substiute Parts

2SC6017-TL-E

onsemiIn Stock: 20012SC6017-TL-E Datasheet

Current PartRFQ

NJVMJD3055T4G

onsemiIn Stock: 20177NJVMJD3055T4G Datasheet

MFR RecommendedRFQ

MJD3055T4

STMicroelectronicsIn Stock: 3606MJD3055T4 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC6017-TL-E is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor type must be NPN
• Collector-emitter breakdown voltage must be greater than or equal to 50 V
• Maximum collector current must be greater than or equal to 10 A
• Package type must be TO-252-3 DPAK (2 Leads + Tab), SC-63 for mechanical and thermal compatibility
• Surface mount mounting type

Compliance Requirements:

• RoHS3 compliance
• Moisture sensitivity level 1 (unlimited)

The substitute parts identified below meet or exceed these electrical and mechanical parameters while maintaining package compatibility and regulatory compliance.

Parameter Comparison

Engineering Selection Recommendations

NJVMJD3055T4G (onsemi) - Manufacturer Recommended Substitute

The NJVMJD3055T4G is the manufacturer-recommended equivalent for the 2SC6017-TL-E. This part maintains the same NPN transistor type, identical maximum collector current rating of 10 A, and identical package configuration (TO-252-3 DPAK). The collector-emitter breakdown voltage is increased to 60 V, providing enhanced voltage margin over the original 50 V specification. The device is in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating. This substitute is available in Tape & Reel packaging format.

MJD3055T4 (STMicroelectronics) - Cross-Manufacturer Alternative

The MJD3055T4 provides cross-manufacturer compatibility from STMicroelectronics. This part shares identical electrical ratings with the NJVMJD3055T4G (60 V breakdown, 10 A collector current) and the same TO-252-3 DPAK package. The MJD3055T4 offers significantly higher power dissipation capability at 20 W compared to the original 950 mW specification, providing additional thermal margin. This device is in active production status with full RoHS3 compliance. The MJD3055T4 is available in Cut Tape & Digi-Reel packaging format.

Both substitute parts are suitable for direct replacement in applications where the original 2SC6017-TL-E is specified, provided that the reduced transition frequency (2 MHz versus 200 MHz) does not conflict with circuit timing requirements.

Frequently Asked Questions (FAQ)

Q: Can the NJVMJD3055T4G directly replace the 2SC6017-TL-E in existing designs?

A: Yes. The NJVMJD3055T4G maintains identical package configuration (TO-252-3 DPAK), identical maximum collector current (10 A), and identical maximum operating temperature (150°C). The increased collector-emitter breakdown voltage (60 V versus 50 V) provides additional voltage margin and does not create compatibility issues. Pin configuration and thermal characteristics are equivalent.

Q: What is the primary difference between the NJVMJD3055T4G and MJD3055T4?

A: Both parts share identical electrical ratings (60 V breakdown, 10 A collector current) and package type (TO-252-3 DPAK). The primary differences are manufacturer (onsemi versus STMicroelectronics), maximum power dissipation (1.75 W versus 20 W), and packaging format (Tape & Reel versus Cut Tape & Digi-Reel). The MJD3055T4 offers superior thermal performance due to higher power rating.

Q: Why does the transition frequency differ between the original part and substitutes?

A: The 2SC6017-TL-E operates at 200 MHz transition frequency, while both substitute parts operate at 2 MHz. This difference reflects different device design and optimization. For applications requiring high-frequency switching above 2 MHz, circuit performance must be evaluated against actual operating conditions.

Q: Are both substitute parts RoHS3 compliant?

A: Yes. Both the NJVMJD3055T4G and MJD3055T4 are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1), matching the compliance profile of the original 2SC6017-TL-E.

Q: What is the significance of the increased power rating in the MJD3055T4?

A: The MJD3055T4 power rating of 20 W versus the original 950 mW indicates enhanced thermal design and junction area. This provides greater thermal margin in applications with sustained current flow or elevated ambient temperatures, though it does not change electrical switching characteristics or package footprint.

Q: Can these substitutes be used interchangeably in the same circuit?

A: Yes, within the constraints of transition frequency requirements. Both NJVMJD3055T4G and MJD3055T4 share identical pin configuration, package dimensions, and electrical ratings (60 V, 10 A). Selection between them depends on thermal requirements, supply chain availability, and packaging format preference (Tape & Reel versus Cut Tape & Digi-Reel).