2SC5753-T2-A Equivalent & Substitute Parts Reference

Part Overview

The CEL 2SC5753-T2-A is an NPN bipolar junction transistor (RF BJT), designed for radio frequency signal amplification with a collector-emitter breakdown voltage of 6V, gain of 13.5dB, and a maximum frequency of 12GHz. The part is supplied in a SOT-343F surface mount package and is now classified as obsolete. For continued production or maintenance, it is essential to identify alternative parts with comparable electrical and mechanical characteristics.

Substiute Parts

2SC5753-T2-A
CELIn Stock: 72202SC5753-T2-A Datasheet
2SC5753-T2-A
Current Part
BFU610F,115
NXP SemiconductorsIn Stock: 3891BFU610F,115 Datasheet
BFU610F,115
Similar

Key Parameters

Parameter 2SC5753-T2-A
Manufacturer CEL
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.7dB @ 2GHz
Gain 13.5dB
Power - Max 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 30mA, 3V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-343F
Product Status Obsolete
REACH Status REACH Unaffected
ECCN EAR99

Substitute Part Grouping Explanation

Substitute transistors are selected strictly by matching fundamental parameters:

  • NPN transistor type
  • Collector-emitter breakdown voltage
  • Frequency transition range
  • Surface mount SOT-343F package
  • Gain, noise figure, collector current, and maximum power
  • Operating temperature

These parameters directly influence electrical compatibility and mechanical fit. Only parts with equivalent or better ratings for these characteristics are considered valid substitutes within the RF transistor category.

Parameter Comparison

Parameter 2SC5753-T2-A (CEL) BFU610F,115 (NXP Semiconductors)
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 6V 5.5V
Frequency - Transition 12GHz 15GHz
Noise Figure (dB Typ @ f) 1.7dB @ 2GHz 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
Gain 13.5dB 17dB
Power - Max 205mW 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 30mA, 3V 90 @ 1mA, 2V
Current - Collector (Ic) (Max) 100mA 10mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-343F SOT-343F
Product Status Obsolete Active

Engineering Selection Recommendations

The 2SC5753-T2-A is listed as obsolete. Substitute selection should always prioritize active parts for supply chain and compliance reasons. Both main and substitute parts are REACH unaffected and classified under ECCN EAR99. Only parts meeting all listed electrical and mechanical parameters should be considered for direct substitution within the RF transistor category.

Frequently Asked Questions (FAQ)

Q1: What are the essential criteria for substituting the 2SC5753-T2-A RF transistor? A1: Essential criteria include NPN type, collector-emitter breakdown voltage, frequency transition parameter, gain, noise figure, maximum power, collector current, SOT-343F package, and operating temperature.

Q2: Is package compatibility mandatory for substitution in this category? A2: Yes, the surface mount SOT-343F package is a mandatory mechanical parameter for direct replacement.

Q3: Are compliance and inventory status relevant in substitution selection? A3: Product status (active vs obsolete), REACH status, and ECCN are required to ensure supply chain availability and regulatory compliance.

Q4: Can any parameter outside those listed here affect substitute selection? A4: Only the parameters explicitly supplied can be used for substitution criteria; no additional parameters are considered.

Q5: What is the role of current gain and collector current in the substitutability of RF bipolar transistors? A5: DC current gain and maximum collector current are fundamental parameters for ensuring similar amplification and safe operation within the intended circuit. Only matching or meeting these values justifies substitution.

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