2SC5706-H Equivalent & Substitute Parts

Part Overview

The 2SC5706-H is an NPN bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 5 A maximum collector current. This through-hole mounted device is designed for general-purpose switching and amplification applications with a maximum power dissipation of 800 mW and transition frequency of 400 MHz. The 2SC5706-H is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

2SC5706-H

onsemiIn Stock: 7192SC5706-H Datasheet

Current PartRFQ

2SD1803T-E

onsemiIn Stock: 20482SD1803T-E Datasheet

DirectRFQ

2SC5706-TL-E

onsemiIn Stock: 38742SC5706-TL-E Datasheet

SimilarRFQ

PHPT61006NYX

Nexperia USA Inc.In Stock: 2467PHPT61006NYX Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC5706-H is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor type (NPN)
• Voltage rating (Collector-Emitter Breakdown ≥ 50 V)
• Current rating (Collector current ≥ 5 A)
• Power dissipation capability (≥ 800 mW)
• DC current gain (hFE ≥ 200 @ specified conditions)
• Saturation voltage characteristics

Mechanical Compatibility Criteria:

• Mounting type (through-hole or surface-mount variants of same base design)
• Package classification (TO-251 family or equivalent power packages)

The substitute parts are grouped into two categories: direct electrical equivalents with packaging variations and enhanced-specification alternatives that exceed the original part ratings while maintaining functional compatibility.

Parameter Comparison

Engineering Selection Recommendations

2SD1803T-E (Direct Through-Hole Equivalent)

The 2SD1803T-E is a direct electrical equivalent to the 2SC5706-H, maintaining identical voltage and current ratings with the same through-hole TO-251 package. This part is suitable for direct replacement in existing through-hole PCB designs. The 2SD1803T-E offers increased power dissipation (1 W versus 800 mW) and is ROHS3 compliant, providing enhanced thermal performance. The lower transition frequency (180 MHz versus 400 MHz) is acceptable for applications not requiring the full bandwidth of the original part.

2SC5706-TL-E (Surface-Mount Variant)

The 2SC5706-TL-E is the active-status surface-mount variant of the 2SC5706-H base design. This part maintains identical electrical specifications including 50 V voltage rating, 5 A current rating, 400 MHz transition frequency, and 800 mW power dissipation. The 2SC5706-TL-E is packaged in TO-252-3 (DPAK) format and is ROHS3 compliant. This part is recommended for new designs or PCB redesigns requiring surface-mount technology.

PHPT61006NYX (Enhanced-Specification Alternative)

The PHPT61006NYX is an enhanced-specification NPN transistor from Nexperia USA Inc., rated for 100 V collector-emitter breakdown voltage and 6 A maximum collector current. This part exceeds the original 2SC5706-H ratings and is suitable for applications requiring higher voltage or current margins. The PHPT61006NYX features increased power dissipation (1.3 W), higher operating temperature (175°C), and automotive-grade qualification (AEC-Q100). The surface-mount LFPAK56 package requires PCB redesign. The lower DC current gain (140 versus 200) must be evaluated for circuit-specific bias requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1803T-E be used as a direct replacement for the 2SC5706-H in existing designs?

A: Yes. The 2SD1803T-E maintains identical voltage (50 V), current (5 A), and DC current gain (200 @ 500mA, 2V) specifications. Both parts use the same through-hole TO-251 package. The 2SD1803T-E provides additional power dissipation margin (1 W versus 800 mW). The lower transition frequency (180 MHz versus 400 MHz) is acceptable unless the circuit requires the full 400 MHz bandwidth.

Q: What is the primary difference between the 2SC5706-TL-E and the 2SC5706-H?

A: The 2SC5706-TL-E is the surface-mount variant of the same base design. Electrical specifications are identical: 50 V voltage rating, 5 A current rating, 400 MHz transition frequency, and 800 mW power dissipation. The 2SC5706-TL-E uses TO-252-3 (DPAK) surface-mount packaging instead of through-hole TO-251. The 2SC5706-TL-E is active-status and ROHS3 compliant.

Q: Is the PHPT61006NYX suitable for direct replacement of the 2SC5706-H?

A: The PHPT61006NYX is electrically compatible but not a direct replacement. It exceeds the original specifications with 100 V voltage rating (versus 50 V) and 6 A current rating (versus 5 A). The PHPT61006NYX uses surface-mount LFPAK56 packaging, requiring PCB redesign. The DC current gain is lower (140 versus 200), which must be verified against circuit bias requirements. The PHPT61006NYX is suitable for applications requiring higher voltage or current margins.

Q: What packaging considerations apply when selecting a substitute?

A: The 2SC5706-H uses through-hole TO-251 mounting. The 2SD1803T-E maintains this through-hole package for direct PCB compatibility. The 2SC5706-TL-E and PHPT61006NYX are surface-mount devices requiring PCB redesign. Surface-mount variants offer improved thermal performance and are preferred for new designs.

Q: Are all substitute parts RoHS compliant?

A: The 2SD1803T-E, 2SC5706-TL-E, and PHPT61006NYX are all ROHS3 compliant. The original 2SC5706-H RoHS status is not specified in the provided data.

Q: Which substitute part is recommended for new designs?

A: The 2SC5706-TL-E is recommended for new designs. It maintains identical electrical specifications to the 2SC5706-H, is active-status, ROHS3 compliant, and uses modern surface-mount packaging. For applications requiring higher voltage or current margins, the PHPT61006NYX provides enhanced specifications with automotive-grade qualification.