2SC5706-E Equivalent & Substitute Parts

Part Overview

The 2SC5706-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 5 A maximum collector current. This device is designed for through-hole mounting in the TO-251-3 (IPak) package configuration and operates at a maximum junction temperature of 150°C. The 2SC5706-E is classified as an obsolete product, necessitating identification of functionally equivalent alternatives for ongoing system support and component procurement.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	5	A
Power - Max	800	mW
Frequency - Transition	400	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V	—
Mounting Type	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	—
Operating Temperature (TJ)	150	°C

Substitute Part Grouping Explanation

Substitution of the 2SC5706-E is determined by equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Transistor type classification (NPN)
Collector-emitter breakdown voltage rating (50 V minimum)
Maximum collector current capacity (5 A minimum)
DC current gain (hFE) minimum specification (200 @ 500mA, 2V)
Collector cutoff current (ICBO) specification (1 µA maximum)

Mechanical Equivalence Criteria:

Through-hole mounting configuration
TO-251-3 package footprint compatibility
Operating temperature range (150°C maximum junction temperature)

The 2SD1803T-E meets all specified electrical and mechanical equivalence criteria, enabling direct substitution in applications where the 2SC5706-E is no longer available.

Parameter Comparison

Parameter	2SC5706-E	2SD1803T-E	Unit
Manufacturer	onsemi	onsemi	—
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	50	50	V
Current - Collector (Ic) (Max)	5	5	A
Vce Saturation (Max) @ Ib, Ic	240mV @ 100mA, 2A	400mV @ 150mA, 3A	—
Current - Collector Cutoff (Max)	1	1	µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V	200 @ 500mA, 2V	—
Power - Max	800	1000	mW
Frequency - Transition	400	180	MHz
Operating Temperature (TJ)	150	150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Obsolete	Obsolete	—

Engineering Selection Recommendations

The 2SD1803T-E is a direct electrical and mechanical equivalent to the 2SC5706-E. Both devices are manufactured by onsemi and share identical voltage, current, and gain specifications. Both components maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for equivalent substitution.

The 2SD1803T-E provides increased maximum power dissipation (1 W versus 800 mW), which represents an enhancement over the original specification. The transition frequency of the 2SD1803T-E (180 MHz) is lower than the 2SC5706-E (400 MHz); however, this parameter does not restrict substitution in applications where the original 400 MHz specification was not a critical design requirement.

Both devices are classified as obsolete products. The 2SD1803T-E currently maintains higher inventory availability (2015 pieces) compared to the 2SC5706-E (6364 pieces), supporting long-term component sourcing strategy.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1803T-E replace the 2SC5706-E in all applications?

A: The 2SD1803T-E meets all specified electrical and mechanical equivalence criteria for the 2SC5706-E. Substitution is valid for applications where the transition frequency specification of 400 MHz is not a critical design parameter. If the original design requires 400 MHz minimum transition frequency performance, the 2SD1803T-E (180 MHz) does not satisfy this requirement.

Q: Are there package compatibility concerns between these devices?

A: Both the 2SC5706-E and 2SD1803T-E utilize identical TO-251-3 (IPak, TO-251AA) through-hole package configurations with short leads. No package modification or PCB redesign is required for substitution.

Q: What is the difference in saturation voltage between these parts?

A: The 2SC5706-E specifies 240 mV maximum saturation voltage at 100 mA base current and 2 A collector current. The 2SD1803T-E specifies 400 mV maximum saturation voltage at 150 mA base current and 3 A collector current. These measurements are taken at different operating points and do not prevent substitution in standard switching applications.

Q: Do both devices meet current regulatory compliance standards?

A: Both the 2SC5706-E and 2SD1803T-E are ROHS3 compliant and REACH unaffected, satisfying current regulatory requirements for electronic component procurement and use.

Q: What is the significance of the higher power rating on the 2SD1803T-E?

A: The 2SD1803T-E maximum power dissipation of 1 W exceeds the 2SC5706-E specification of 800 mW. This represents a performance enhancement that does not restrict substitution and may provide additional thermal margin in power-limited applications.

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