2SC5606-A RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The 2SC5606-A is an RF transistor NPN manufactured by CEL, designed for high-frequency applications operating at 21GHz with a maximum collector-emitter breakdown voltage of 3.3V. This component is classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. The 2SC5606-A delivers 115mW maximum power dissipation with a transition frequency of 21GHz, suitable for RF amplification in compact surface-mount applications using SOT-523 packaging.

Due to its obsolete status, alternative RF transistor NPN components with comparable electrical characteristics and mechanical compatibility are required to maintain system functionality and ensure long-term component availability.

Key Parameters

Parameter	2SC5606-A Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	3.3	V
Frequency - Transition	21	GHz
Noise Figure (Typ @ f)	1.2 @ 2GHz	dB
Gain	12.5	dB
Power - Max	115	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 2V	—
Current - Collector (Ic) (Max)	35	mA
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-523	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitution of the 2SC5606-A RF transistor NPN is determined by alignment of the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN configuration
Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 3.3V
Frequency - Transition: Equal to or greater than 21GHz
Mounting Type: Surface Mount
Operating Temperature: Maximum junction temperature of 150°C or higher
Moisture Sensitivity Level: MSL 1 (Unlimited) or equivalent

Secondary Compatibility Factors:

Power dissipation capability (115mW minimum)
DC Current Gain (hFE) characteristics
Collector current rating (35mA minimum)
Package form factor compatibility with SOT-523 or equivalent surface-mount packages

Substitute parts are grouped based on their ability to meet or exceed these parameters while maintaining functional equivalence in RF amplification circuits. Parts with higher voltage ratings, frequency capabilities, or power ratings are acceptable substitutes provided they operate within the same thermal and mechanical constraints.

Parameter Comparison

Parameter	2SC5606-A	MCH4009-TL-H	BFR740L3RHE6327XTSA1	BFP640FH6327XTSA1	MAX2602ESA+T
Manufacturer	CEL	onsemi	Infineon Technologies	Infineon Technologies	Analog Devices Inc./Maxim Integrated
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	3.3V	3.5V	4.7V	4.5V	15V
Frequency - Transition	21GHz	25GHz	42GHz	40GHz	1GHz
Noise Figure (Typ @ f)	1.2dB @ 2GHz	1.1dB @ 2GHz	0.5–0.8dB @ 1.8–6GHz	0.65–1.2dB @ 1.8–6GHz	3.3dB @ 836MHz
Gain	12.5dB	13.5dB	24.5dB	23dB	11.6dB
Power - Max	115mW	120mW	160mW	200mW	6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 2V	50 @ 5mA, 1V	160 @ 25mA, 3V	110 @ 30mA, 3V	100 @ 250mA, 3V
Current - Collector (Ic) (Max)	35mA	40mA	30mA	50mA	1.2A
Operating Temperature (TJ)	150°C	150°C	150°C	150°C	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-523	SOT-343F	SC-101, SOT-883	4-SMD, Flat Leads	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Primary Substitute: MCH4009-TL-H (onsemi)

The MCH4009-TL-H is the closest functional equivalent to the 2SC5606-A. It maintains NPN transistor configuration with a collector-emitter breakdown voltage of 3.5V, exceeding the 3.3V requirement by a minimal margin. The transition frequency of 25GHz surpasses the 21GHz specification, and the noise figure of 1.1dB at 2GHz closely matches the original 1.2dB specification. Maximum power dissipation of 120mW and collector current of 40mA align with the original design envelope. The MCH4009-TL-H is active in production status with ROHS3 compliance, ensuring long-term availability and regulatory conformance. Package form factor (SOT-343F) differs from the original SOT-523 but maintains surface-mount compatibility.

Secondary Substitute: BFR740L3RHE6327XTSA1 (Infineon Technologies)

The BFR740L3RHE6327XTSA1 offers superior RF performance with a transition frequency of 42GHz and enhanced noise figure characteristics (0.5–0.8dB across 1.8–6GHz). Collector-emitter breakdown voltage of 4.7V provides additional voltage margin. This part is active in production with ROHS3 compliance. The higher gain (24.5dB) and DC current gain (160 @ 25mA, 3V) indicate enhanced amplification capability. Package form factor (SC-101, SOT-883) differs from the original SOT-523.

Tertiary Substitute: BFP640FH6327XTSA1 (Infineon Technologies)

The BFP640FH6327XTSA1 provides 40GHz transition frequency with noise figure performance of 0.65–1.2dB at 1.8–6GHz. Collector-emitter breakdown voltage of 4.5V and maximum power dissipation of 200mW exceed original specifications. This part is active in production with ROHS3 compliance. Package form factor (4-SMD, Flat Leads) differs from the original SOT-523.

Alternative Substitute: MAX2602ESA+T (Analog Devices Inc./Maxim Integrated)

The MAX2602ESA+T operates at lower frequency (1GHz) but provides significantly higher power dissipation (6.4W) and collector current capability (1.2A). Collector-emitter breakdown voltage of 15V provides substantial voltage margin. This part is active in production with ROHS3 compliance. Package form factor (8-SOIC-EP) differs substantially from the original SOT-523 and is suitable only for applications where frequency requirements are lower than 21GHz.

All recommended substitutes maintain NPN transistor configuration, surface-mount technology, MSL 1 rating, REACH compliance, and operating temperature of 150°C or higher. Selection among these alternatives depends on specific application frequency requirements, available board space for package form factors, and power dissipation constraints.

Frequently Asked Questions (FAQ)

Q: Can the MCH4009-TL-H directly replace the 2SC5606-A in existing PCB layouts?

A: The MCH4009-TL-H uses SOT-343F packaging while the 2SC5606-A uses SOT-523 packaging. These packages have different pin configurations and footprints. PCB layout modification is required. Pin-to-pin functional equivalence exists, but physical placement and routing must be redesigned.

Q: What is the primary reason the 2SC5606-A is obsolete?

A: The 2SC5606-A is classified as obsolete by manufacturer CEL. Substitute parts from active manufacturers (onsemi, Infineon Technologies, Analog Devices Inc./Maxim Integrated) provide equivalent or superior RF performance with guaranteed long-term availability and regulatory compliance.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts (MCH4009-TL-H, BFR740L3RHE6327XTSA1, BFP640FH6327XTSA1, and MAX2602ESA+T) are ROHS3 compliant. The original 2SC5606-A RoHS status is not specified in available documentation.

Q: Which substitute part has the closest noise figure performance to the 2SC5606-A?

A: The MCH4009-TL-H provides the closest noise figure match at 1.1dB @ 2GHz, compared to the original 1.2dB @ 2GHz. The BFR740L3RHE6327XTSA1 offers superior noise performance at 0.5–0.8dB across 1.8–6GHz but at a different frequency range.

Q: Can the MAX2602ESA+T be used as a direct substitute for high-frequency RF applications?

A: No. The MAX2602ESA+T operates at 1GHz transition frequency, significantly below the 2SC5606-A specification of 21GHz. This part is suitable only for lower-frequency RF applications and is not a functional equivalent for 21GHz designs.

Q: What is the voltage margin provided by substitute parts compared to the 2SC5606-A?

A: The 2SC5606-A specifies 3.3V collector-emitter breakdown voltage. The MCH4009-TL-H provides 3.5V (0.2V margin), BFR740L3RHE6327XTSA1 provides 4.7V (1.4V margin), BFP640FH6327XTSA1 provides 4.5V (1.2V margin), and MAX2602ESA+T provides 15V (11.7V margin). Higher voltage ratings provide additional design margin but may not be necessary for 3.3V supply applications.

Q: Are all substitute parts available in tape and reel packaging?

A: Yes. All recommended substitute parts are available in Tape & Reel (TR) packaging, suitable for automated assembly processes. The original 2SC5606-A packaging format is not specified in available documentation.

Q: What is the moisture sensitivity level (MSL) rating for all parts in this comparison?

A: All parts, including the 2SC5606-A and all substitute options, carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity constraints during storage and handling.

Q: Which substitute part offers the highest transition frequency?

A: The BFR740L3RHE6327XTSA1 offers the highest transition frequency at 42GHz, followed by the BFP640FH6327XTSA1 at 40GHz. Both exceed the 2SC5606-A specification of 21GHz.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: No. Each substitute part has different package form factors, pin configurations, and electrical characteristics. Circuit design and PCB layout must be tailored to the specific substitute part selected. Interchangeability is not possible without design modification.

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