2SC555600L Equivalent & Substitute Parts

Part Overview

The 2SC555600L is an RF transistor NPN manufactured by Panasonic Electronic Components, designed for radio frequency applications requiring 10V collector-emitter breakdown voltage and 80mA maximum collector current. This surface mount device operates at 6GHz transition frequency with 300mW maximum power dissipation and is housed in a TO-236-3 (SOT-23-3) package.

The 2SC555600L is classified as obsolete. Locating equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.

Substiute Parts

2SC555600L

Panasonic Electronic ComponentsIn Stock: 11992SC555600L Datasheet

Current PartRFQ

2SC5227A-5-TB-E

onsemiIn Stock: 65602SC5227A-5-TB-E Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC555600L is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V minimum
• Package / Case: TO-236-3, SC-59, SOT-23-3 (surface mount, three-pin configuration)
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: 1 (Unlimited)

Operational Compatibility Parameters:

• Frequency - Transition: 6GHz or higher
• Current - Collector (Ic) (Max): 80mA or higher
• Power - Max: 300mW or higher
• DC Current Gain (hFE): 110 or higher at specified conditions
• Operating Temperature: 150°C or higher

The substitute part 2SC5227A-5-TB-E meets all mandatory matching parameters and exceeds operational compatibility thresholds, qualifying it as a direct electrical and mechanical substitute for the 2SC555600L.

Parameter Comparison

Engineering Selection Recommendations

The 2SC5227A-5-TB-E qualifies as a functional substitute for the 2SC555600L based on the following engineering criteria:

Electrical Compatibility: Both devices share identical collector-emitter breakdown voltage (10V), operating temperature rating (150°C), and NPN transistor type. The 2SC5227A-5-TB-E demonstrates superior frequency performance (7GHz versus 6GHz) and improved noise figure characteristics (1dB @ 1GHz versus 1.7dB @ 800MHz).

Mechanical Compatibility: Both components utilize identical surface mount packaging (TO-236-3, SC-59, SOT-23-3) with matching three-pin configurations and moisture sensitivity levels (MSL 1, Unlimited).

Compliance Status: The 2SC5227A-5-TB-E carries RoHS3 compliance and REACH unaffected status, providing regulatory alignment for modern applications. Both devices share identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications.

Operational Considerations: The 2SC5227A-5-TB-E exhibits reduced maximum collector current (70mA versus 80mA) and lower maximum power dissipation (200mW versus 300mW). Circuit designs must verify that operating points remain within the substitute device's ratings. The higher DC current gain (135 versus 110) and improved gain characteristics (12dB versus 11.5dB) provide performance advantages in RF applications.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5227A-5-TB-E directly replace the 2SC555600L in existing designs?

A: The 2SC5227A-5-TB-E is mechanically and electrically compatible with the 2SC555600L. Both devices share identical package specifications (SOT-23-3), voltage ratings (10V), and operating temperature limits (150°C). However, circuit designs must account for the reduced maximum collector current (70mA versus 80mA) and power dissipation (200mW versus 300mW) of the substitute device. Verify that your application's operating point remains within these lower limits.

Q: What are the key differences between these two devices?

A: The primary differences are maximum current and power ratings. The 2SC555600L supports 80mA collector current and 300mW power dissipation, while the 2SC5227A-5-TB-E is rated for 70mA and 200mW respectively. The 2SC5227A-5-TB-E offers superior RF performance with higher transition frequency (7GHz versus 6GHz), better noise figure (1dB @ 1GHz versus 1.7dB @ 800MHz), and higher DC current gain (135 versus 110).

Q: Are both devices still available for purchase?

A: Both the 2SC555600L and 2SC5227A-5-TB-E are classified as obsolete products. However, inventory availability exists through component distributors. The 2SC5227A-5-TB-E currently has higher stock levels (6498 pieces) compared to the 2SC555600L (1125 pieces), making it a more readily available alternative.

Q: What compliance certifications apply to the 2SC5227A-5-TB-E?

A: The 2SC5227A-5-TB-E is RoHS3 compliant and REACH unaffected. Both devices share identical export control classifications (ECCN EAR99) and tariff codes (HTSUS 8541.21.0075).

Q: Does the package type differ between these devices?

A: No. Both devices use identical surface mount packaging: TO-236-3, SC-59, SOT-23-3. The physical footprint, pin configuration, and mounting requirements are identical. Both devices have MSL 1 (Unlimited) moisture sensitivity ratings.

Q: What should I verify before substituting the 2SC5227A-5-TB-E?

A: Verify that your circuit's maximum collector current requirement does not exceed 70mA and that power dissipation remains below 200mW. Confirm that the improved RF characteristics (higher frequency capability and lower noise figure) do not introduce unintended effects in your specific application. Review circuit biasing to ensure DC current gain differences (135 versus 110) do not affect circuit operation.