2SC5551AF-TD-E Equivalent & Substitute Parts

Part Overview

The 2SC5551AF-TD-E is an RF transistor NPN manufactured by onsemi, rated for 30V collector-emitter breakdown voltage with a transition frequency of 3.5GHz and maximum power dissipation of 1.3W. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for new designs and ongoing production requirements. The part is surface-mounted in a TO-243AA (PCP) package with RoHS3 compliance and unlimited moisture sensitivity rating.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	2SC5551AF-TD-E	—
Manufacturer	onsemi	—
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	30	V
Frequency - Transition	3.5	GHz
Power - Max	1.3	W
Current - Collector (Ic) (Max)	300	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	135 @ 50mA, 5V	—
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-243AA	—
Product Status	Obsolete	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2SC5551AF-TD-E is determined by alignment of the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN configuration
Voltage - Collector Emitter Breakdown (Max): Minimum 30V required for direct substitution
Frequency - Transition: Minimum 3.5GHz required for RF performance equivalence
Power - Max: Minimum 1.3W required for power handling capability
Current - Collector (Ic) (Max): Minimum 300mA required for current capacity
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ) maximum

Secondary Compatibility Factors:

Package compatibility with PCB layout constraints
RoHS3 compliance for regulatory alignment
Moisture sensitivity level (MSL) rating

The substitute parts listed below are grouped based on their ability to meet or exceed the primary electrical specifications of the 2SC5551AF-TD-E while maintaining NPN transistor topology and surface-mount configuration.

Parameter Comparison

Parameter	2SC5551AF-TD-E	BF888H6327XTSA1	BFP420H6801XTSA1	BFP740FESDH6327XTSA1	BFR460L3E6327XTMA1	BFR840L3RHESDE6327XTSA1	MRF455
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	MACOM Technology Solutions
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	30V	4V	5V	4.7V	5.8V	2.6V	18V
Frequency - Transition	3.5GHz	47GHz	25GHz	47GHz	22GHz	75GHz	—
Power - Max	1.3W	160mW	160mW	160mW	200mW	75mW	60W
Current - Collector (Ic) (Max)	300mA	30mA	35mA	45mA	50mA	35mA	15A
Operating Temperature (TJ)	150°C	150°C	150°C	150°C	150°C	150°C	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	TO-243AA	SC-82A, SOT-343	SC-82A, SOT-343	4-SMD, Flat Leads	SC-101, SOT-883	SC-101, SOT-883	211-07
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Active Product Status Requirement: All substitute parts listed carry Active product status, ensuring ongoing availability and manufacturer support. The 2SC5551AF-TD-E, classified as Obsolete, requires replacement for new designs and sustained production.

Regulatory Compliance: All substitute parts maintain ROHS3 compliance, aligning with the regulatory framework of the original component. This ensures compatibility with supply chain requirements and end-market regulations.

Voltage Rating Considerations: The 2SC5551AF-TD-E specifies 30V maximum collector-emitter breakdown voltage. Substitute parts from Infineon Technologies (BF888H6327XTSA1, BFP420H6801XTSA1, BFP740FESDH6327XTSA1, BFR460L3E6327XTMA1, BFR840L3RHESDE6327XTSA1) operate at significantly lower voltage ratings (2.6V to 5.8V), limiting their applicability to circuits designed for the original 30V specification. The MRF455 from MACOM Technology Solutions operates at 18V, also below the original specification.

Frequency and Power Trade-offs: Infineon substitute parts offer higher transition frequencies (22GHz to 75GHz) compared to the original 3.5GHz specification, supporting advanced RF applications. However, these parts operate at reduced power levels (75mW to 200mW) relative to the original 1.3W rating. The MRF455 provides significantly higher power dissipation (60W) but operates at lower frequency and in a chassis-mount configuration incompatible with surface-mount PCB layouts.

Current Handling: All Infineon substitute parts operate at reduced maximum collector current (30mA to 50mA) compared to the original 300mA specification. The MRF455 supports 15A collector current, exceeding the original specification but requiring different mounting and thermal management approaches.

Package and Mounting Compatibility: The original TO-243AA surface-mount package differs from substitute part packages (SOT-343, 4-TSFP, SOT-883, 211-07). PCB layout modifications are required for any substitution. The MRF455 chassis-mount configuration is incompatible with surface-mount applications.

Selection Guidance: Selection of substitute parts requires evaluation of specific circuit requirements. Applications requiring the original 30V voltage rating and 1.3W power dissipation may not find direct equivalents within the provided substitute list. Applications operating at lower voltages and higher frequencies may utilize Infineon parts. High-power applications may consider the MRF455 with appropriate circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can the BF888H6327XTSA1 directly replace the 2SC5551AF-TD-E?

A: Direct replacement is not supported. The BF888H6327XTSA1 operates at 4V maximum collector-emitter breakdown voltage, compared to 30V for the 2SC5551AF-TD-E. Circuit redesign is required if this part is selected. The BF888H6327XTSA1 supports higher frequency operation (47GHz) but reduced power handling (160mW) and current capacity (30mA).

Q: What are the key differences between the Infineon substitute parts?

A: Infineon substitute parts vary in voltage rating (2.6V to 5.8V), frequency capability (22GHz to 75GHz), power dissipation (75mW to 200mW), and package configuration (SOT-343, 4-TSFP, SOT-883). Selection depends on specific circuit voltage, frequency, and power requirements.

Q: Is the MRF455 suitable for surface-mount PCB applications?

A: No. The MRF455 is a chassis-mount component with a 211-07 package configuration, incompatible with surface-mount PCB layouts. This part requires different mounting infrastructure and thermal management approaches.

Q: What is the primary limitation of Infineon substitute parts compared to the 2SC5551AF-TD-E?

A: Infineon substitute parts operate at significantly lower maximum collector-emitter breakdown voltages (2.6V to 5.8V) compared to the original 30V specification. Applications requiring 30V operation cannot use these parts without circuit redesign to lower voltage levels.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance, matching the regulatory status of the original 2SC5551AF-TD-E component.

Q: What package modifications are required when substituting parts?

A: The original 2SC5551AF-TD-E uses a TO-243AA package. Substitute parts use different surface-mount packages (SOT-343, 4-TSFP, SOT-883) or chassis-mount configurations (211-07). PCB layout and footprint modifications are required for any substitution.

Q: Can the BFP420H6801XTSA1 handle the same current as the 2SC5551AF-TD-E?

A: No. The BFP420H6801XTSA1 supports maximum collector current of 35mA, compared to 300mA for the 2SC5551AF-TD-E. Applications requiring 300mA operation cannot use this part.

Q: What is the moisture sensitivity level (MSL) rating for substitute parts?

A: All substitute parts carry MSL 1 (Unlimited) rating, matching the original component specification. This indicates no moisture sensitivity restrictions for storage and handling.

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