2SC5536A-TL-H Equivalent & Substitute Parts

Part Overview

The 2SC5536A-TL-H is an RF transistor NPN manufactured by onsemi, designed for RF applications operating at 1.7GHz with a maximum power dissipation of 100mW. This device is packaged in a 3-SSFP surface mount configuration and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain functional compatibility within RF circuit applications while accommodating the electrical and mechanical constraints of the target application.

Substiute Parts

2SC5536A-TL-H

onsemiIn Stock: 402502SC5536A-TL-H Datasheet

Current PartRFQ

55GN01FA-TL-H

onsemiIn Stock: 859855GN01FA-TL-H Datasheet

SimilarRFQ

BFP760H6327XTSA1

Infineon TechnologiesIn Stock: 800347BFP760H6327XTSA1 Datasheet

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MAPR-000912-500S00

MACOM Technology SolutionsIn Stock: 1006MAPR-000912-500S00 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC5536A-TL-H is determined by compatibility across the following critical parameters:

Transistor Type: All substitutes must be NPN configuration to maintain circuit polarity and biasing requirements.

Voltage Rating: The collector-emitter breakdown voltage must equal or exceed 12V to ensure safe operation within the original circuit voltage envelope.

Frequency Performance: The transition frequency must support operation at or above 1.7GHz to maintain RF performance characteristics in the target frequency band.

Power Dissipation: Maximum power rating must equal or exceed 100mW to handle the thermal load of the application.

Current Capability: Maximum collector current must equal or exceed 50mA to support the circuit's current requirements.

Mounting Type: Surface mount configuration is required for PCB compatibility.

Package Compatibility: The SC-81 (3-SSFP) package or equivalent footprint is necessary for mechanical fit on the PCB.

Compliance: RoHS3 compliance and MSL rating of 1 are required to meet regulatory and manufacturing standards.

The substitute parts listed below satisfy these criteria with varying degrees of parameter overlap. Selection depends on the specific application requirements and circuit design constraints.

Parameter Comparison

Engineering Selection Recommendations

55GN01FA-TL-H (onsemi): This part is an active product with the same manufacturer and identical package configuration (SC-81, 3-SSFP). The voltage rating of 10V is below the original 12V specification, which may limit application in circuits requiring the full 12V headroom. However, the higher frequency capability (4.5GHz ~ 5.5GHz), increased power rating (250mW), and higher collector current (70mA) provide enhanced performance margins for RF applications. This substitute is suitable for designs where the 10V voltage ceiling is acceptable and higher frequency performance is beneficial. RoHS3 compliance and MSL rating of 1 match the original part.

BFP760H6327XTSA1 (Infineon Technologies): This part is an active product with significantly higher frequency capability (45GHz) and comparable power rating (240mW). The voltage rating of 4V is substantially lower than the original 12V specification and represents a critical limitation for direct substitution in circuits designed for 12V operation. The package differs (SOT-343 versus 3-SSFP), requiring PCB layout modification. This substitute is applicable only in low-voltage RF applications where the 4V rating is compatible with circuit design. RoHS3 compliance and MSL rating of 1 are maintained.

MAPR-000912-500S00 (MACOM Technology Solutions): This part is an active product with a significantly different application profile. The chassis mount configuration and absence of transition frequency specification indicate this is a power transistor designed for high-power RF amplification rather than small-signal RF applications. The 80V voltage rating and 500W power dissipation are incompatible with the original 100mW, 12V design envelope. This substitute is not applicable for direct replacement of the 2SC5536A-TL-H in small-signal RF circuits.

Recommended Selection Path: For applications requiring direct functional replacement with minimal circuit modification, the 55GN01FA-TL-H is the primary substitute, provided the 10V voltage ceiling is acceptable. For applications requiring the full 12V voltage rating, alternative small-signal RF transistors outside the provided substitute list must be evaluated.

Frequently Asked Questions (FAQ)

Q: Can the 55GN01FA-TL-H be used as a direct replacement for the 2SC5536A-TL-H?

A: The 55GN01FA-TL-H shares the same package configuration (SC-81, 3-SSFP) and manufacturer (onsemi), making it mechanically compatible. However, the voltage rating is reduced from 12V to 10V. Direct substitution is possible only if the circuit design operates within the 10V collector-emitter voltage limit. Circuit analysis is required to confirm voltage compatibility.

Q: Why is the BFP760H6327XTSA1 listed as a substitute if the voltage rating is only 4V?

A: The BFP760H6327XTSA1 is listed based on the provided input data as a substitute part. However, the 4V voltage rating represents a significant departure from the original 12V specification. This part is suitable only for low-voltage RF applications and is not recommended for circuits designed around the original 12V operating point.

Q: What is the significance of the package difference between the 2SC5536A-TL-H and BFP760H6327XTSA1?

A: The original part uses SC-81 (3-SSFP) packaging, while the BFP760H6327XTSA1 uses SC-82A (SOT-343) packaging. These packages have different footprints and pin configurations. Substitution requires PCB layout modification and re-qualification of the circuit board design.

Q: Is the MAPR-000912-500S00 suitable for replacing the 2SC5536A-TL-H?

A: No. The MAPR-000912-500S00 is a chassis-mount power transistor designed for high-power RF amplification (500W), whereas the 2SC5536A-TL-H is a surface-mount small-signal RF transistor (100mW). The mounting type, power rating, and application class are fundamentally incompatible.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts listed maintain RoHS3 compliance and Moisture Sensitivity Level (MSL) rating of 1 (Unlimited), matching the original part's regulatory and manufacturing standards.

Q: How does the frequency capability of substitute parts compare to the original?

A: The 2SC5536A-TL-H operates at 1.7GHz. The 55GN01FA-TL-H extends this to 4.5GHz ~ 5.5GHz, and the BFP760H6327XTSA1 reaches 45GHz. Higher frequency capability provides performance margin but does not reduce the minimum frequency requirement. All substitutes support operation at or above 1.7GHz.

Q: Are there any thermal considerations when selecting a substitute?

A: All listed substitutes maintain a maximum operating temperature (TJ) of 150°C or higher, matching or exceeding the original part's thermal rating. The MAPR-000912-500S00 operates at 200°C, providing additional thermal margin for high-power applications.